Organic light emitting diode device and display device

Patent metadata

Field	Value
Publication number	US-2016293879-A1
Application number	US-201414436786-A
Country	US
Kind code	A1
Filing date	Oct 30, 2014
Priority date	Aug 20, 2014
Publication date	Oct 6, 2016
Grant date	—

Abstract

An organic light emitting diode device and a display device are disclosed. The organic light emitting diode device includes a cathode ( 7 ), an anode ( 1 ) and an emitting layer ( 4 ) between the cathode ( 7 ) and the anode ( 1 ), further includes a first charge generation layer ( 10 ) and a second charge generation layer ( 11 ), and/or, a third charge generation layer ( 12 ) and a fourth charge generation layer ( 13 ). The first charge generation layer ( 10 ) and the second charge generation layer ( 11 ) are disposed between the cathode ( 7 ) and the emitting layer ( 4 ), the first charge generation layer ( 10 ) is close to the emitting layer ( 4 ) and configured for transporting electrons. The third charge generation layer ( 12 ) and the fourth charge generation layer ( 13 ) are disposed between the anode ( 1 ) and the emitting layer ( 4 ) and the fourth charge generation layer ( 13 ) is close to the emitting layer ( 4 ) for transporting holes. Since electrons and holes need not be generated by the cathode ( 7 ) or the anode ( 1 ), there is no limitation on materials for the cathode and the anode.

First claim

1 . An organic light emitting diode device comprising a cathode, an anode and an emitting layer disposed between the cathode and the anode, further comprising a first charge generation layer and a second charge generation layer and/or a third charge generation layer and a fourth charge generation layer; wherein,
the first charge generation layer and the second charge generation layer are disposed between the cathode and the emitting layer, the first charge generation layer is close to the emitting layer and configured for transporting electrons; and the second charge generation layer is close to the cathode and configured for transporting holes; and the third charge generation layer and the fourth charge generation layer are disposed between the anode and the emitting layer, the third charge generation layer is close to the anode and configured for transporting electrons; and the fourth charge generation layer is close to the emitting layer and configured for transporting holes.

2 . The organic light emitting diode device of claim 1 , wherein the organic light emitting diode device comprises the first charge generation layer and the second charge generation layer, and further comprises an electron transport layer; wherein the electron transport layer is disposed between the first charge generation layer and the emitting layer.

3 . The organic light emitting diode device of claim 2 , wherein the organic light emitting diode device further comprises an electron injection layer disposed between the first charge generation layer and the electron transport layer.

4 . The organic light emitting diode device of claim 1 , wherein the organic light emitting diode device comprises the third charge generation layer and the fourth charge generation layer, and further comprises a hole transport layer, wherein the hole transport layer is disposed between the fourth charge generation layer and the emitting layer.

5 . The organic light emitting diode device of claim 4 , wherein the organic light emitting diode device further comprises a hole injection layer disposed between the fourth charge generation layer and the hole transport layer.

6 . The organic light emitting diode device of claim 2 , wherein a material of the cathode has ductility.

7 . The organic light emitting diode device of claim 6 , wherein the material of the cathode is ITO.

8 . The organic light emitting diode device of claim 7 , wherein the cathode is disposed over the second charge generation layer and formed by magnetron sputtering method, and a protection layer is formed between the cathode and the second charge generation layer.

9 . The organic light emitting diode device of claim 1 , wherein the first charge generation layer and the third charge generation layer are organic n-type doped layers, the second charge generation layer and the fourth charge generation layer are metal oxide layers, organic layers or organic p-type doped layers; or the first charge generation layer, the second charge generation layer, the third charge generation layer and the fourth charge generation layer are all non-doped layers.

10 . A display device comprising the organic light emitting diode device of claim 1 .

11 . The display device of claim 10 , wherein the organic light emitting diode device comprises the first charge generation layer and the second charge generation layer, and further comprises an electron transport layer; wherein the electron transport layer is disposed between the first charge generation layer and the emitting layer.

12 . The display device of claim 11 , wherein the organic light emitting diode device further comprises an electron injection layer disposed between the first charge generation layer and the electron transport layer.

13 . The display device of claim 10 , wherein the organic light emitting diode device comprises the third charge generation layer and the fourth charge generation layer, and further comprises a hole transport layer, wherein the hole transport layer is disposed between the fourth charge generation layer and the emitting layer.

14 . The display device of claim 13 , wherein the organic light emitting diode device further comprises a hole injection layer disposed between the fourth charge generation layer and the hole transport layer.

15 . The display device of claim 11 , wherein a material of the cathode has ductility.

16 . The display device of claim 15 , wherein the material of the cathode is ITO.

17 . The display device of claim 16 , wherein the cathode is disposed over the second charge generation layer and formed by magnetron sputtering method, and a protection layer is formed between the cathode and the second charge generation layer.

18 . The display device of claim 10 , wherein the first charge generation layer and the third charge generation layer are organic n-type doped layers, the second charge generation layer and the fourth charge generation layer are metal oxide layers, organic layers or organic p-type doped layers; or the first charge generation layer, the second charge generation layer, the third charge generation layer and the fourth charge generation layer are all non-doped layer.

Assignees

• Boe Technology Group Co Ltd
• Ordos Yuansheng Optoelectronics Co Ltd

Inventors

• Chen Lei
• Wu Haidong
• Kim Tae Gyu

Classifications

• H10K59/80524

  Transparent cathodes, e.g. comprising thin metal layers · CPC title

• H01L51/5084

  Electricity · mapped topic

• H01L51/56

  Electricity · mapped topic

• H01L51/5068 Primary

  Electricity · mapped topic

• H01L51/5072

  Electricity · mapped topic