High aspect ratio dense pattern-programmable nanostructures utilizing metal assisted chemical etching
US-2015376798-A1 · Dec 31, 2015 · US
US2016293284A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016293284-A1 |
| Application number | US-201615184890-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 16, 2016 |
| Priority date | Jul 27, 2011 |
| Publication date | Oct 6, 2016 |
| Grant date | — |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A metal grating structure for X-ray includes a first silicon part having a plate form or a layer form, and a grating portion, wherein the grating portion includes a plurality of second silicon parts formed on the first silicon part, and a plurality of metal parts interposed between the respective adjacent second silicon parts, each of the plurality of metal parts having a deposition start tip part extending toward an inside of the first silicon part.
Opening claim text (preview).
1 . A metal grating structure for X-ray, comprising: a first silicon part having a plate form or a layer form; and a grating portion, wherein the grating portion includes a plurality of second silicon parts formed on the first silicon part, and a plurality of metal parts interposed between the respective adjacent second silicon parts, each of the plurality of metal parts having a deposition start tip part extending toward an inside of the first silicon part. 2 . The metal grating structure for X-ray according to claim 1 , wherein the deposition start tip part includes a concave part having side surfaces, one of the side surfaces having a tapered shape. 3 . The metal grating structure for X-ray according to claim 2 , wherein both of the side surfaces of the concave part have a tapered shape, and intersect with each other. 4 . The metal grating structure for X-ray according to claim 1 , wherein a ratio between a first depth of each of the second silicon parts and a second depth of the deposition start tip part is set to be from 99:1 to 80:20. 5 . The metal grating structure for X-ray according to claim 1 , wherein the deposition start tip part includes a concave part having side surfaces, one of the side surfaces having a curved shape. 6 . The metal grating structure for X-ray according to claim 1 , wherein the deposition start tip part includes a concave part which has side surfaces both having an outwardly convex spherical shape. 7 . The metal grating structure for X-ray according to claim 1 , wherein each of the metal parts has an aspect ratio of 5 or more. 8 . The metal grating structure for X-ray according to claim 1 , wherein the metal parts are made of metal selected from anyone of gold, platinum, rhodium, ruthenium, iridium, indium, and nickel. 9 . The metal grating structure for X-ray according to claim 1 , wherein the first silicon part and the second silicon parts are made of n-type silicon. 10 . The metal grating structure for X-ray according to claim 1 , further comprising: a first insulating layer between e surfaces of the second silicon parts and the metal parts. 11 . The metal grating structure for X-ray according to claim 1 , further comprising: a second insulating layer formed on an upper surface of each of the second silicon parts. 12 . The metal grating structure for X-ray according to claim 1 , wherein the first silicon part has a mirror-finished side surface being opposite to other side surface coming into contact with the second silicon parts.
Pretreatment of metallic surfaces to be electroplated · CPC title
using masking means · CPC title
Semiconductors · CPC title
by measuring interferences of X-rays, e.g. Borrmann effect · CPC title
using diffraction, refraction or reflection, e.g. monochromators (G21K1/10, G21K7/00 take precedence) · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.