Magneto-resistive effect element with recessed antiferromagnetic layer

Patent metadata

Field	Value
Publication number	US-2016293187-A1
Application number	US-201514672638-A
Country	US
Kind code	A1
Filing date	Mar 30, 2015
Priority date	Mar 30, 2015
Publication date	Oct 6, 2016
Grant date	—

Abstract

A magneto-resistive effect element has a first shield layer, a second layer, and a multilayer film that is positioned between the first shield layer and the second shield layer. The multilayer film has a free layer, a first pinned layer, a nonmagnetic spacer layer, a second pinned layer that fixes a magnetization direction of the first pinned layer, and an antiferromagnetic layer that is exchange-coupled with the second pinned layer. The antiferromagnetic layer is positioned away from an air bearing surface (ABS). The second pinned layer has a first part that is positioned away from the ABS, and a second part that makes contact with the first part, and that extends to the ABS parallel to the first pinned layer; and the first part has a first layer that makes contact with the antiferromagnetic layer, a second layer that makes contact with the second part, and a layer that is positioned between the first layer and the second layer, and that exchange-couples the first layer and the second layer in an anti-parallel orientation.

First claim

1 . (canceled)

2 . A magneto-resistive effect element (MR element), comprising:
a first shield layer, a second shield layer, and a multilayer film positioned between the first shield layer and the second shield layer, wherein the multilayer film comprises:
a free layer having a magnetization direction that fluctuates relative to an external magnetic field,
a first pinned layer that is positioned closer to the first shield layer than the free layer, and having a magnetization direction that is fixed relative to the external magnetic field,
a nonmagnetic spacer layer that is positioned between the free layer and the first pinned layer,
a second pinned layer positioned closer to the first shield layer than the first pinned layer, and that fixes the magnetization direction of the first pinned layer, and
an antiferromagnetic layer that is positioned closer to the first shield layer than the second pinned layer, and that is exchange-coupled with the second pinned layer;
the antiferromagnetic layer is positioned away from an air bearing surface (ABS); the second pinned layer comprises:
a first part, that is positioned away from the ABS, and
a second part that makes contact with the first part, and that extends to the ABS parallel to the first pinned layer, and
the first part comprises:
a first layer that makes contact with the antiferromagnetic layer,
a second layer that makes contact with the second part, and
a layer that is positioned between the first layer and the second layer and that exchange-couples the first layer and the second layer in anti-parallel orientation,
wherein a value of a magnetic film thickness of the first pinned layer subtracted from a magnetic film thickness of the second part of the second pinned layer is within a range of −0.3×10 −3 [A] or greater and 1.6×10 −3 [A] or less.

3 . The MR element according to claim 2 , wherein
the magnetic film thickness of the second part of the second pinned layer and that of the first pinned layer are equal.

4 . A magneto-resistive effect element (MR element), comprising:
a first shield layer, a second shield layer, and a multilayer film positioned between the first shield layer and the second shield layer, wherein the multilayer film comprises:
a free layer having a magnetization direction that fluctuates relative to an external magnetic field,
a first pinned layer that is positioned closer to the first shield layer than the free layer, and having a magnetization direction that is fixed relative to the external magnetic field,
a nonmagnetic spacer layer that is positioned between the free layer and the first pinned layer,
a second pinned layer positioned closer to the first shield layer than the first pinned layer, and that fixes the magnetization direction of the first pinned layer, and an antiferromagnetic layer that is positioned closer to the first shield layer than the second pinned layer, and that is exchange-coupled with the second pinned layer; the antiferromagnetic layer is positioned away from an air bearing surface (ABS); the second pinned layer comprises:
a first part, that is positioned away from the ABS; and
a second part that makes contact with the first part, and that extends to the ABS parallel to the first pinned layer, and

the first part comprises:
a first layer that makes contact with the antiferromagnetic layer,
a second layer that makes contact with the second part, and
a layer that is positioned between the first layer and the second layer, and that exchange-couples the first layer and the second layer in anti-parallel orientation,
wherein
a value of a magnetic film thickness of the second layer subtracted from that of the first layer is within the range of −0.3×10 −3 [A] or greater and 1.6×10 −3 [A] or less.

5 . The MR element according to claim 4 , wherein
the magnetic film thickness of the first layer and that of the second layer are equal.

6 . The MR element according to claim 2 , wherein
the film thickness of the second layer is 0.8 nm or greater.

7 . A magneto-resistive effect element (MR element), comprising:
a first shield layer, a second shield layer, and a multilayer film positioned between the first shield layer and the second shield layer, wherein the multilayer film comprises:
a free layer having a magnetization direction that fluctuates relative to an external magnetic field,
a first pinned layer that is positioned closer to the first shield layer than the free layer, and having a magnetization direction that is fixed relative to the external magnetic field,
a nonmagnetic spacer layer that is positioned between the free layer and the first pinned layer,
a second pinned layer positioned closer to the first shield layer than the first pinned layer, and that fixes the magnetization direction of the first pinned layer, and an antiferromagnetic layer that is positioned closer to the first shield layer than the second pinned layer, and that is exchange-coupled with the second pinned layer;
the antiferromagnetic layer is positioned away from an air bearing surface (ABS);
the second pinned layer comprises:
a first part, that is positioned away from the ABS, and
a second part that makes contact with the first part, and that extends to the ABS parallel to the first pinned layer, and

the first part comprises:
a first layer that makes contact with the antiferromagnetic layer,
a second layer that makes contact with the second part, and
a layer that is positioned between the first layer and the second layer and that exchange-couples the first layer and the second layer in anti-parallel orientation,
wherein
a total sum of a magnetic film thickness of the first pinned layer and that of the second pinned layer is 1.35×10 −2 [A] or less.

8 . The MR element according to claim 2 , further comprising:
an inner shield layer that is positioned between the first shield layer and the second shield layer, that makes contact with the first shield layer, and that faces the ABS, and a non-magnetic layer that is positioned between the antiferromagnetic layer and the inner shield layer.

9 . A head gimbal assembly (HGA), comprising:
a magnetic head slider comprising the MR element according to claim 2 , and a suspension that elastically supports the magnetic head slider, wherein
the suspension comprises:
a flexure joined to the magnetic head slider,
a load beam having one end connected to the flexure, and
a base plate that is connected to the other end of the load beam.

10 . A magnetic recording apparatus, comprising:
a magnetic head slider comprising the MR element according to claim 2 , a magnetic recording medium that is positioned opposite to the magnetic head slider, a spindle motor that rotary-drives the magnetic recording medium, and a device that supports the magnetic head slider, and that positions the magnetic head slider relative to the magnetic recording medium.

11 . The MR element according to claim 4 , wherein
the film thickness of the second layer is 0.8 nm or greater.

12 . The MR element according to claim 4 , further comprising:
an inner shield layer that is positioned between the first shield layer and the second shield layer, that makes contact with the first shield layer, and that faces the ABS, and a non-magnetic layer that is positioned between the antiferromagnetic layer and the inner shield layer.

13 . A head gimbal assembly (HGA), comprising:
a magnetic head slider comprising the MR element according to claim 4 , and a suspension that elastically supports the magnetic head slider, wherein

Assignees

• Tdk Corp

Inventors

• Makino Kenzo
• Miura Satoshi

Classifications

• G11B5/3912 Primary

  Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields (G11B5/3916 takes precedence) · CPC title

• G11B2005/3996

  large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices · CPC title

• G01R33/098

  comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title

• G11B5/398

  Specially shaped layers · CPC title