Magnetoresistive sensor with stop-layers

Patent metadata

Field	Value
Publication number	US-2016293186-A9
Application number	US-201414309012-A
Country	US
Kind code	A9
Filing date	Jun 19, 2014
Priority date	Oct 14, 2011
Publication date	Oct 6, 2016
Grant date	—

Abstract

Tolerances for manufacturing reader structures for transducer heads continue to grow smaller and storage density in corresponding storage media increases. Reader stop layers may be utilized during manufacturing of reader structures to protect various layers of the reader structure from recession and/or scratches while processing other non-protected layers of the reader structure. For example, the stop layer may have a very low polish rate during mechanical or chemical-mechanical polishing. Surrounding areas may be significantly polished while a structure protected by a stop layer with a very low polish rate is substantially unaffected. The stop layer may then be removed via etching, for example, after the mechanical or chemical-mechanical polishing is completed.

First claim

What is claimed is:

1 . A read sensor comprising:
a first stop layer oriented between a shield element and an alumina insert.

2 . The read sensor of claim 1 , wherein the alumina insert is positioned within a depression formed in the shield element.

3 . The read sensor of claim 1 , wherein the first stop layer is in contact with the shield element and the alumina insert.

4 . The read sensor of claim 1 , further comprising:
a second stop layer formed on the alumina insert.

5 . The read sensor of claim 1 , further comprising:
a reader stack formed on the second stop layer.

6 . The read sensor of claim 1 , further comprising:
a photo-resist formed on the first stop layer and forming a wall of the depression.

7 . The read sensor of claim 5 , further comprising:
at least one layer formed between the photo-resist and the first stop layer.

8 . The read sensor of claim 1 , wherein the first stop layer comprises at least one of ruthenium, tantalum, and chromium.

9 . A method comprising:
forming a depression in a shield element of a reader; depositing an alumina insert within the depression; and depositing a stop layer on the alumina insert.

10 . The method of claim 8 , further comprising:
polishing to remove re-deposition material from at least one layer formed on the stop layer, wherein the stop layer protects the alumina insert during the polishing operation.

11 . The method of claim 8 , further comprising:
forming a reader stack on the stop layer.

12 . The method of claim 8 , wherein forming the depression in the shield element further comprises forming the depression using an ion milling process.

13 . The method of claim 8 , wherein the alumina insert fills the depression and exceeds a depth of the depression.

14 . The method of claim 8 , wherein the stop layer comprises at least one of ruthenium, chromium, and tantalum.

15 . A method comprising:
forming a first stop layer on a shield element; removing material of the first stop layer to form a depression in the shield element; and depositing an alumina insert within the depression.

16 . The method of claim 14 , further comprising:
depositing at least one additional layer adjacent to the first stop layer, and forming the depression in the at least one additional layer and the shield element.

17 . The method of claim 15 , further comprising:
polishing to remove material of the at least one additional layer, wherein the second stop layer protects the alumina insert during the polishing operation.

18 . The method of claim 14 , further comprising:
forming a second stop layer on the alumina insert.

19 . The method of claim 14 , further comprising:
forming a reader stack on the second stop layer.

20 . The method of claim 14 further wherein the first stop layer comprises at least one of ruthenium, chromium, and tantalum.

Assignees

• Seagate Technology Llc

Inventors

• Van Dorn Carolyn Pitcher
• Boonstra Thomas Roy
• Singleton Eric Walter
• Mckinlay Shaun Eric

Classifications

• G11B5/39 Primary

  using magneto-resistive devices {or effects} · CPC title

• G11B5/11

  Shielding of head against electric or magnetic fields · CPC title

• G11B5/84 Primary

  Processes or apparatus specially adapted for manufacturing record carriers · CPC title

• G11B5/40

  Protective measures on heads, e.g. against excessive temperature  (G11B5/31 takes precedence; protection against wear G11B5/255  {; protective structure of the head: see under structures, e.g. G11B5/3106}) · CPC title

• G11B5/112

  Manufacture of shielding device · CPC title