Reflective type display device

Patent metadata

Field	Value
Publication number	US-2016291406-A1
Application number	US-201514785587-A
Country	US
Kind code	A1
Filing date	Apr 27, 2015
Priority date	Sep 23, 2014
Publication date	Oct 6, 2016
Grant date	—

Abstract

An embodiment of the present invention discloses a reflective type display device, relating to the technical field of display. The liquid crystal display device is relatively thin and light, with low energy consumption. The reflective type display device comprises a polarizer, a transparent first substrate, a liquid crystal molecular layer and a second substrate arranged in sequence; wherein the reflective type display device further comprises: a selective reflecting layer located between the liquid crystal molecular layer and the second substrate; the selective reflecting layer reflects light with wavelength within a specific wavelength range.

First claim

1 - 11 . (canceled)

12 . A reflective type display device comprising:
a polarizer; a transparent first substrate; a liquid crystal molecular layer; a second substrate; and a selective reflecting layer; wherein the polarizer, the transparent first substrate, the liquid crystal molecular layer, and the second substrate are arranged in sequence; wherein the selective reflecting layer is located between the liquid crystal molecular layer and the second substrate; wherein the selective reflecting layer reflects light with wavelength within a specific wavelength range.

13 . The reflective type display device of claim 12 wherein the selective reflecting layer comprises:
a first portion wherein the first portion reflects light with wavelength within red wavelength range;
a second portion wherein the second portion reflects light with wavelength within green wavelength range; and
a third portion wherein the third portion reflects light with wavelength within blue wavelength range.

14 . The reflective type display device of claim 13 wherein the first portion of the selective reflecting layer, the second portion of the selective reflecting layer, and the third portion of the selective reflecting layer transmit light with wavelength within a wavelength range not reflected; and wherein the first portion of the selective reflecting layer, the second portion of the selective reflecting layer, and the third portion of the selective reflecting layer are electrically conductive.

15 . The reflective type display device of claim 14 wherein the first portion of the selective reflecting layer is made of silver nanoparticle coated with silver coating;
wherein the second portion of the selective reflecting layer is made of titanium dioxide nanoparticle coated with silver coating;
wherein the third portion of the selective reflecting layer is made of silicon nanoparticle coated with silver coating.

16 . The reflective type display device of claim 12 further comprising:
a quarter-wave plate located between the polarizer and the first substrate;
an insulating layer;
a thin film transistor wherein the thin film transistor comprises a drain;
a passivation layer; and
a pixel electrode;
wherein the insulating layer, the thin film transistor, the passivation layer, and the pixel electrode are arranged on the selective reflecting layer in sequence;
wherein the selective reflecting layer is located on the second substrate;
wherein the pixel electrode is connected with the drain of the thin film transistor through a via hole on the passivation layer.

17 . The reflective type display device of claim 13 further comprising:
a quarter-wave plate located between the polarizer and the first substrate;
an insulating layer;
a thin film transistor wherein the thin film transistor comprises a drain;
a passivation layer; and
a pixel electrode;
wherein the insulating layer, the thin film transistor, the passivation layer, and the pixel electrode are arranged on the selective reflecting layer in sequence;
wherein the selective reflecting layer is located on the second substrate;
wherein the pixel electrode is connected with the drain of the thin film transistor through a via hole on the passivation layer.

18 . The reflective type display device of claim 14 further comprising:
a quarter-wave plate located between the polarizer and the first substrate;
an insulating layer;
a thin film transistor wherein the thin film transistor comprises a drain;
a passivation layer; and
a pixel electrode;
wherein the insulating layer, the thin film transistor, the passivation layer, and the pixel electrode are arranged on the selective reflecting layer in sequence;
wherein the selective reflecting layer is located on the second substrate;
wherein the pixel electrode is connected with the drain of the thin film transistor through a via hole on the passivation layer.

19 . The reflective type display device of claim 15 further comprising:
a quarter-wave plate located between the polarizer and the first substrate;
an insulating layer;
a thin film transistor wherein the thin film transistor comprises a drain;
a passivation layer; and
a pixel electrode;
wherein the insulating layer, the thin film transistor, the passivation layer, and the pixel electrode are arranged on the selective reflecting layer in sequence;
wherein the selective reflecting layer is located on the second substrate;
wherein the pixel electrode is connected with the drain of the thin film transistor through a via hole on the passivation layer.

20 . The reflective type display device of claim 14 further comprising:
a quarter-wave plate located between the polarizer and the first substrate;
a thin film transistor wherein the thin film transistor comprises a drain; and
a passivation layer:
wherein the thin film layer and the passivation layer are arranged on the second substrate;
wherein the selective reflecting layer is located on the passivation layer;
wherein the selective reflecting layer is connected with the drain of the thin film transistor through a via on the passivation layer.

21 . The reflective type display device of claim 12 further comprising:
an insulating layer;
a thin film transistor wherein the thin film transistor comprises a drain;
a common electrode;
a passivation layer; and
a pixel electrode;
wherein the elective reflecting layer is located on the second substrate;
wherein the insulating layer is arranged on the selective reflecting layer;
wherein the thin film transistor, the common electrode, the passivation layer, and the pixel electrode are arranged on the insulating layer;
wherein the pixel electrode is connected with the drain of the thin film transistor through a via hole on the passivation layer;
wherein at least one of the common electrode and the pixel electrode comprises slits.

22 . The reflective type display device of claim 13 further comprising:
an insulating layer;
a thin film transistor wherein the thin film transistor comprises a drain;
a common electrode;
a passivation layer; and
a pixel electrode;
wherein the elective reflecting layer is located on the second substrate;
wherein the insulating layer is arranged on the selective reflecting layer;
wherein the thin film transistor, the common electrode, the passivation layer, and the pixel electrode are arranged on the insulating layer;
wherein the pixel electrode is connected with the drain of the thin film transistor through a via hole on the passivation layer;
wherein at least one of the common electrode and the pixel electrode comprises slits.

23 . The reflective type display device of claim 14 further comprising:
an insulating layer;
a thin film transistor wherein the thin film transistor comprises a drain;
a common electrode;
a passivation layer; and
a pixel electrode;
wherein the elective reflecting layer is located on the second substrate;
wherein the insulating layer is arranged on the selective reflecting layer;
wherein the thin film transistor, the common electrode, the passivation layer, and the pixel electrode are arranged on the insulating layer;
wherein the pixel electrode is connected with the drain of the thin film transistor through a via hole on the passivation layer;
wherein at least one of the common electrode and the pixel electrode comprises slits.

24 . The reflective type display device of claim 15 further comprising:
an insulating layer;
a thin film transistor wherein the thin film transistor comprises a drain;
a common electrode;
a passivation layer; and
a p

Assignees

• Boe Technology Group Co Ltd
• Chengdu Boe Optoelect Tech Co

Inventors

• Zuo Xiongcan
• Zhang Junrui

Classifications

• G02F1/13363

  Birefringent elements, e.g. for optical compensation · CPC title

• G02F1/133345

  Insulating layers (G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence) · CPC title

• G02F2203/09

  transflective · CPC title

• G02F2202/36

  Micro- or nanomaterials · CPC title

• G02F2201/123

  pixel · CPC title