Encapsulating resin composition, semiconductor device using the encapsulating resin composition, and method for manufacturing semiconductor device using the encapsulating resin composition

Patent metadata

Field	Value
Publication number	US-2016289443-A1
Application number	US-201615075227-A
Country	US
Kind code	A1
Filing date	Mar 21, 2016
Priority date	Mar 31, 2015
Publication date	Oct 6, 2016
Grant date	—

Abstract

An encapsulating resin composition contains a thermosetting resin component, a curing accelerator, an inorganic filler, an ion trapping agent, and an aromatic monocarboxylic acid having one or more electron-withdrawing functional groups selected from a nitro group and a cyano group. The encapsulating resin composition is solid at 25° C., and has a sulfur content, measured by X-ray fluorescence analysis, of 0.1 mass % or less in terms of SO 3 .

First claim

What is claimed is:

1 . An encapsulating resin composition comprising:
a thermosetting resin component; a curing accelerator; an inorganic filler; an ion trapping agent; and an aromatic monocarboxylic acid having one or more electron-withdrawing functional groups selected from a nitro group and a cyano group, wherein the encapsulating resin composition is solid at 25° C., and has a sulfur content, measured by X-ray fluorescence analysis, of 0.1 mass % or less in terms of SO 3 .

2 . The encapsulating resin composition according to claim 1 ,
wherein the aromatic monocarboxylic acid has at least the nitro group.

3 . The encapsulating resin composition according to claim 1 ,
wherein the thermosetting resin component contains at least one component selected from the group consisting of epoxy resin, cyanate ester resin, benzoxazine resin, and maleimide resin.

4 . The encapsulating resin composition according to claim 1 ,
wherein the thermosetting resin component contains epoxy resin, and at least one component of a phenol compound, benzoxazine resin, acid anhydride, and an imidazole compound.

5 . The encapsulating resin composition according to claim 1 ,
wherein the thermosetting resin component is free from a nitro group.

6 . The encapsulating resin composition according to claim 1 ,
wherein the ion trapping agent includes at least one of a hydrotalcite ion trapping agent and an aluminum-magnesium ion trapping agent, and contains a carbonate ion or a hydroxide ion.

7 . The encapsulating resin composition according to claim 1 , wherein a pH value of the encapsulation resin composition is in a range from 5.0 to 7.5, inclusive.

8 . A semiconductor device comprising:
a lead frame; a semiconductor element mounted on the lead frame; a wire electrically connecting the semiconductor element to the lead frame; and an encapsulation resin encapsulating the semiconductor element, wherein the encapsulation resin is a cured product of the encapsulating resin composition as defined in claim 1 .

9 . The semiconductor device according to claim 8 ,
wherein the lead frame has a plated layer including at least one component of silver, nickel, and palladium.

10 . The semiconductor device according to claim 8 ,
wherein the wire includes at least one of copper and silver.

11 . The semiconductor device according to claim 8 ,
wherein pH of the cured product of the encapsulating resin composition constituting a part of the semiconductor device is in a range from 5.0 to 7.5, inclusive.

12 . A method for manufacturing a semiconductor device, the method comprising:
preparing the encapsulating resin composition as defined in claim 1 ; and molding the encapsulating resin composition by a pressure-molding process to produce an encapsulation resin encapsulating a semiconductor element, wherein the semiconductor element is mounted on a lead frame, and electrically coupled to the lead frame by a wire.

13 . The method for manufacturing a semiconductor device according to claim 12 ,
wherein when the encapsulating resin composition is molded by a pressure-molding process, a molding pressure is 3.0 MPa or more and a molding temperature is 120° C. or more.

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Iwatani Emi
• Ogawa Kazuto
• Ishikawa Kota
• Tsuji Takayuki

Classifications

• H10W72/522

  Multilayered bond wires, e.g. having a coating concentric around a core · CPC title

• H10W72/5522

  comprising gold [Au] · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title