Methods for chemical mechanical polishing and forming interconnect structure
US-2024290629-A1 · Aug 29, 2024 · US
US2016288289A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016288289-A1 |
| Application number | US-201415022376-A |
| Country | US |
| Kind code | A1 |
| Filing date | Aug 11, 2014 |
| Priority date | Sep 20, 2013 |
| Publication date | Oct 6, 2016 |
| Grant date | — |
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The present invention is the invention of a polishing composition comprising a silica in which a functional group satisfying at least one of condition (1) and condition (2) described below is fixed on the surface, and a pH-adjusting agent; condition (1): the functional group has an amino group; and condition (2): the functional group has a halogeno group, and the polishing composition of the invention can sufficiently control a polishing rate of a Si-containing material.
Opening claim text (preview).
1 . A polishing composition comprising: a silica in which a functional group satisfying at least one of condition (1) and condition (2) below is fixed on a surface thereof: condition (1): the functional group has an amino group; and, condition (2): the functional group has a halogeno group; and, a pH-adjusting agent. 2 . The polishing composition according to claim 1 , wherein when the condition (2) is satisfied, the halogeno group comprises at least one selected from the group consisting of a fluoro group, a chloro group, a bromo group, and an iodo group. 3 . The polishing composition according to claim 1 , wherein the polishing composition is used for polishing a polishing object having a layer comprising a Si-containing material. 4 . The polishing composition according to claim 3 , wherein the Si-containing material comprises at least one selected from the group consisting of monocrystalline silicon, polycrystalline silicon, silicon oxide, and silicon nitride. 5 . The polishing composition according to claim 1 , wherein when the condition (1) is satisfied, the polishing composition is used for polishing a polishing object having a layer comprising a noble metal. 6 . The polishing composition according to claim 5 , wherein the noble metal comprises at least one selected from the group consisting of gold, silver, platinum, palladium, rhodium, ruthenium, iridium, and osmium. 7 . A polishing method comprising: a step of polishing a material to be polished having a polishing object by using the polishing composition according to claim 1 . 8 . A method for producing a substrate, the method comprising: a step of polishing by using the polishing method according to claim 7 . 9 . A method for producing a polishing composition, the method comprising mixing a silica in which a functional group satisfying at least one of condition (1) and condition (2) below is fixed on a surface thereof: condition (1): the functional group has an amino group; and, condition (2): the functional group has a halogeno group, with a pH-adjusting agent.
involving a dielectric removal step · CPC title
of conductive or resistive materials · CPC title
characterised by the composition of the lapping agent · CPC title
Composite particles, e.g. coated particles · CPC title
containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title
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