Semiconductor laser device and backlight device using the semiconductor laser device

Patent metadata

Field	Value
Publication number	US-2016285234-A1
Application number	US-201615081284-A
Country	US
Kind code	A1
Filing date	Mar 25, 2016
Priority date	Mar 26, 2015
Publication date	Sep 29, 2016
Grant date	—

Abstract

The semiconductor laser device includes a base member having a recess that opens upward, a semiconductor laser element disposed on a bottom surface of the recess, and a light reflecting member being disposed forward of a light emitting surface of the semiconductor laser element and including a light reflecting surface to reflect laser light emitted from the semiconductor laser element. The semiconductor laser element and the light reflecting member are arranged such that a direction of an optical axis of light that is reflected by the light reflecting member is different from a direction that is perpendicular to a lower surface of the base member.

First claim

What is claimed is:

1 . A semiconductor laser device comprising:
a base member having a recess that opens upward, a semiconductor laser element disposed on a bottom surface of the recess, and a light reflecting member disposed on the bottom surface of the recess and configured to reflect laser light emitted from the semiconductor laser element; wherein the semiconductor laser element and the light reflecting member are arranged such that a direction of an optical axis of a laser light that is reflected by the light reflecting member differs from a direction perpendicular to a lower surface of the base member.

2 . The semiconductor laser device according to claim 1 , wherein, in a top view, the base member has a substantially rectangular outer shape that has a short side and a long side, and
wherein, when seen from a lateral side corresponding to the short side of the substantially rectangular outer shape, the optical axis of the light reflected by the light reflecting member approaches a plane extending through an inner surface of the base member that corresponds to the long side of the rectangular outer shape.

3 . The semiconductor laser device according to claim 2 , wherein, in the top view, a semiconductor laser element is arranged such that the optical axis of the laser light emitted from the semiconductor laser element is parallel with each of two long sides of the substantially rectangular shape.

4 . The semiconductor laser device according to claim 2 , wherein, in the top view, the light reflecting member is arranged such that one side of an outermost periphery of the semiconductor laser element that corresponds to an upper edge of a light emitting surface of the semiconductor laser element is closest to the light reflecting member, and one side of an outermost periphery of the light reflecting member that is closest to the semiconductor laser element, are not parallel to each other.

5 . The semiconductor laser device according to claim 3 , wherein, in the top view, the light reflecting member is arranged such that one side of an outermost periphery of the semiconductor laser element that corresponds to an upper edge of a light emitting surface of the semiconductor laser element and is closest to the light reflecting member, and one side of an outermost periphery of the light reflecting member that is closest to the semiconductor laser element, are not parallel to each other.

6 . The semiconductor laser device according to claim 4 , wherein said one side of the outermost periphery of the semiconductor laser element is inclined with respect to said one side of the outermost periphery of the light reflecting member at an angle in a range of 3° to 60°.

7 . The semiconductor laser device according to claim 5 , wherein said one side of the outermost periphery of the semiconductor laser element is inclined with respect to said one side of the outermost periphery of the light reflecting member at an angle in a range of 3° to 60°.

8 . The semiconductor laser device according to claim 2 , wherein, in the top view, a protective element is disposed in a plane extending through the semiconductor laser element and the light reflecting member.

9 . The semiconductor laser device according to claim 6 , wherein, in the top view, a protective element is disposed in plane extending through the semiconductor laser element and the light reflecting member.

10 . The semiconductor laser device according to claim 1 , wherein the light reflecting member is disposed on a portion of the bottom surface of the recess of the base member, and the portion on which the light reflecting member is disposed is inclined with respect to the lower surface of the base member.

11 . The semiconductor laser device according to claim 2 , wherein the light reflecting member is disposed on a portion of the bottom surface of the recess of the base member, and the portion on which the light reflecting member is disposed is inclined with respect to the lower surface of the base member.

12 . The semiconductor laser device according to claim 1 , wherein a plurality of the semiconductor laser elements are disposed on the bottom surface of the recess with a light reflecting member therebetween, the light reflecting member being disposed between the semiconductor laser elements.

13 . The semiconductor laser device according to claim 3 , wherein a plurality of the semiconductor laser elements are disposed on the bottom surface of the recess with a light reflecting member therebetween, the light reflecting member being disposed between the semiconductor laser elements.

14 . A backlight device comprising:
the semiconductor laser device according to claim 1 , and a light guide plate arranged above the base member.

15 . A backlight device comprising:
the semiconductor laser device according to claim 4 , and a light guide plate arranged above the base member.

16 . A backlight device comprising:
the semiconductor laser device according to claim 7 , and a light guide plate arranged above the base member.

17 . The backlight device according to claim 15 , wherein the semiconductor laser device and an optical member which includes the light guide plate are arranged on an upper surface of a support member, and a height of the optical member is smaller than a height of the semiconductor laser device.

18 . The backlight device according to claim 14 , wherein an optical axis of light emitted from the semiconductor laser device and a lower surface of the light guide plate form an angle in a range of 5 to 30.

19 . The backlight device according to claim 15 , wherein an optical axis of light emitted from the semiconductor laser device and a lower surface of the light guide plate form an angle in a range of 5 to 30.

20 . The backlight device according to claim 17 , wherein an optical axis of light emitted from the semiconductor laser device and a lower surface of the light guide plate form an angle in a range of 5 to 30.

Assignees

• Nichia Corp

Inventors

• Okahisa Eiichiro

Classifications

• G02B6/0066 Primary

  characterised by the light source being coupled to the light guide · CPC title

• H01S5/02236

  Electricity · mapped topic

• H01S5/02292 Primary

  Electricity · mapped topic

• H01S5/02255 Primary

  using beam deflecting elements · CPC title

• H01S5/02208

  characterised by the shape of the housings · CPC title