Piezoelectric element, piezoelectric element application device, and method of manufacturing piezoelectric element

Patent metadata

Field	Value
Publication number	US-2016284969-A1
Application number	US-201615078236-A
Country	US
Kind code	A1
Filing date	Mar 23, 2016
Priority date	Mar 27, 2015
Publication date	Sep 29, 2016
Grant date	—

Abstract

A piezoelectric element includes a first electrode formed on a substrate, a piezoelectric layer which is formed on the first electrode and includes a complex oxide with an ABO 3 -type perovskite structure represented by the following formula (1); and a second electrode formed on the piezoelectric layer, in which a seed layer including a complex oxide with an ABO 3 perovskite structure in which K and Nb are included between the first electrode and the piezoelectric layer, and the piezoelectric layer is formed from a polycrystal that is preferentially orientated on the (110) plane.
(K X ,Na 1-X )NbO 3   ( 1 )

First claim

What is claimed is:

1 . A piezoelectric element, comprising:
a first electrode formed on a substrate; a piezoelectric layer which is formed on the first electrode and includes a complex oxide with an ABO 3 -type perovskite structure represented by the following formula (1); and a second electrode formed on the piezoelectric layer, wherein a seed layer including a complex oxide with an ABO 3 -type perovskite structure in which K and Nb are included between the first electrode and the piezoelectric layer, and the piezoelectric layer is formed from a polycrystal that is preferentially orientated on the (110) plane.
(K X ,Na 1-X )NbO 3   (1)

2 . The piezoelectric element according to claim 1 ,
wherein an X-ray diffraction peak position (2θ) derived from the (110) plane of the piezoelectric layer is 31.6° or more to 32.5° or less.

3 . The piezoelectric element according to claim 1 ,
wherein, in formula (1), x is greater than 0 to 0.94 or less.

4 . The piezoelectric element according to claim 1 ,
wherein the piezoelectric layer has a thickness of 50 nm or more to 2000 nm or less.

5 . The piezoelectric element according to claim 1 ,
wherein the piezoelectric layer is prepared by a wet method.

6 . A piezoelectric element application device, comprising:
the piezoelectric element according to claim 1 .

7 . A piezoelectric element application device, comprising:
the piezoelectric element according to claim 2 .

8 . A piezoelectric element application device, comprising:
the piezoelectric element according to claim 3 .

9 . A piezoelectric element application device, comprising:
the piezoelectric element according to claim 4 .

10 . A piezoelectric element application device, comprising:
the piezoelectric element according to claim 5 .

11 . A method of manufacturing a piezoelectric element that includes a first electrode formed on a substrate, a piezoelectric layer which is formed on the first electrode and includes a complex oxide with an ABO 3 -type perovskite structure represented by the following formula (1), and a second electrode formed on the piezoelectric layer, the method comprising:
forming a seed layer including a complex oxide with an ABO 3 -type perovskite structure in which K and Nb are included on the first electrode, and forming the piezoelectric layer on the seed layer to be preferentially oriented on the (110) plane.
(K X ,Na 1-X )NbO 3   (1)

Assignees

• Seiko Epson Corp

Inventors

• Sumi Koji
• Kobayashi Tomokazu
• Kitada Kazuya

Classifications

• B41J2/14201

  Structure of print heads with piezoelectric elements · CPC title

• B41J2202/11

  characterised by specific geometrical characteristics · CPC title

• B41J2/1607

  Production of print heads with piezoelectric elements (B41J2/1606, B41J2/162 take precedence) · CPC title

• B41J2202/03

  Specific materials used · CPC title

• B41J2002/14241

  having a cover around the piezoelectric thin film element · CPC title