Light emitting device and light emitting device package including the same

Patent metadata

Field	Value
Publication number	US-2016284941-A1
Application number	US-201615077161-A
Country	US
Kind code	A1
Filing date	Mar 22, 2016
Priority date	Mar 26, 2015
Publication date	Sep 29, 2016
Grant date	—

Abstract

A light emitting device and a light emitting device package are provided. The light emitting device may include a substrate, a light emitting structure provided under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first insulating layer configured to expose the second conductive semiconductor layer and provided on a lower edge of the light emitting structure, a first light permeable electrode layer provided under the second conductive semiconductor layer exposed by the first insulating layer, a second light permeable electrode layer provided under the first insulating layer and the first light permeable electrode layer, and a reflective layer provided under the second light permeable electrode layer.

First claim

What is claimed is:

1 . A light emitting device, comprising:
a substrate; a light emitting structure provided under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first insulating layer configured to expose the second conductive semiconductor layer and provided on a lower edge of the light emitting structure; a first light permeable electrode layer provided under the second conductive semiconductor layer exposed by the first insulating layer; a second light permeable electrode layer provided under the first insulating layer and the first light permeable electrode layer; and a reflective layer provided under the second light permeable electrode layer.

2 . The light emitting device of claim 1 , wherein the reflective layer is separated from the first insulating layer by the second light permeable electrode layer.

3 . The light emitting device of claim 1 , wherein the second light permeable electrode layer includes:
a first surface configured to face the light emitting structure; and a second surface opposite the first surface, wherein an entirety of the reflective layer is provided under the second surface.

4 . The light emitting device of claim 1 , wherein at least portions of the first insulating layer, the second light permeable electrode layer, or the reflective layer overlap with each other in a thickness direction of the light emitting structure.

5 . The light emitting device of claim 4 , wherein a width of the first insulating layer provided on the lower edge of the light emitting structure is in a range of about 10 μm to 40 μm.

6 . The light emitting device of claim 5 , wherein an overlapping width at which the first insulating layer, the second light permeable electrode layer, and the reflective layer overlap in the thickness direction is 5 μm.

7 . The light emitting device of claim 1 , wherein a thickness of each of the first and second light permeable electrode layers is in a range of several nanometers to several tens of nanometers.

8 . The light emitting device of claim 1 , wherein the second light permeable electrode layer is provided to cover a boundary between the first light permeable electrode layer and the first insulating layer.

9 . The light emitting device of claim 1 , wherein, in a first direction that intersects a thickness direction of the light emitting structure, a first width of the reflective layer is equal to or less than a second width of the second light permeable electrode layer.

10 . The light emitting device of claim 1 , wherein the first insulating layer includes SiO 2 , and the reflective layer includes silver (Ag).

11 . The light emitting device of claim 1 , further including a first electrode provided under the first conductive semiconductor layer is exposed at a through-hole that passes through the second conductive semiconductor layer and the active layer while exposing the first conductive semiconductor layer.

12 . The light emitting device of claim 11 , wherein the first insulating layer is provided to extend from the lower edge of the light emitting structure to a side of the light emitting structure exposed at the through-hole.

13 . The light emitting device of claim 1 , wherein the first and second light permeable electrode layers are formed of a same material as each other.

14 . The light emitting device of claim 1 , wherein the first and second light permeable electrode layers are formed of materials different from each other.

15 . A light emitting device package having the light emitting device of claim 1 , wherein the light emitting device package further includes:
a first bonding pad connected to the first conductive semiconductor layer; a second bonding pad separated from the first bonding pad and connected to the second conductive semiconductor layer; and a second insulating layer provided between the first bonding pad and the second light permeable electrode layer and between the first bonding pad and the reflective layer.

16 . The light emitting device package of claim 15 , wherein the light emitting device package further includes:
first and second lead frames electrically connected to the first and second bonding pads, respectively; and a molding member configured to surround the light emitting device.

17 . A light emitting device, comprising:
a substrate; a light emitting structure provided under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first insulating layer configured to expose the second conductive semiconductor layer and provided under the light emitting structure; a plurality of light permeable electrode layers provided under the exposed second conductive semiconductor layer that overlaps the second conductive semiconductor layer in a thickness direction of the light emitting structure; and a reflective layer separated from the first insulating layer by at least one of the plurality of light permeable electrode layers and provided under the plurality of light permeable electrode layers.

18 . The light emitting device of claim 17 , wherein the plurality of light permeable electrode layers include:
a first light permeable electrode layer provided in contact with the exposed second conductive semiconductor layer; and a second light permeable electrode layer provided under the first light permeable electrode layer and under the first insulating layer to separate the first insulating layer from the reflective layer.

19 . The light emitting device of claim 18 , wherein a thickness of the first light permeable electrode layer is smaller than a thickness of the first insulating layer.

20 . The light emitting device of claim 18 , wherein at least portions of the second light permeable electrode layer, the first electrode layer, and the reflective layer overlap with each other in the thickness direction of the light emitting structure.

Assignees

• Lg Innotek Co Ltd

Inventors

• Seo Jae Won
• Lee Sang Youl
• Jung Sung Ho
• Choi Jin Kyung

Classifications

• H10H20/84

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H20/018

  Bonding of wafers · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/854

  characterised by their material, e.g. epoxy or silicone resins · CPC title

• H10H20/835 Primary

  Reflective materials · CPC title