Light emitting semiconductor component including an absorptive layer

Patent metadata

Field	Value
Publication number	US-2016284931-A1
Application number	US-201415034919-A
Country	US
Kind code	A1
Filing date	Nov 13, 2014
Priority date	Nov 19, 2013
Publication date	Sep 29, 2016
Grant date	—

Abstract

A radiation-emitting semiconductor device includes a semiconductor body with a semiconductor layer sequence, wherein the semiconductor layer sequence has an active region that generates radiation having a peak wavelength in the near-infrared spectral range and an absorptive region, and the absorption region at least partially absorbs a shortwave radiation component having a cut-off wavelength shorter than the peak wavelength.

First claim

1 - 14 . (canceled)

15 . A radiation-emitting semiconductor device comprising a semiconductor body with a semiconductor layer sequence, wherein the semiconductor layer sequence has an active region that generates radiation having a peak wavelength in the near-infrared spectral range and an absorption region, and the absorption region at least partially absorbs a shortwave radiation component having a cut-off wavelength shorter than the peak wavelength.

16 . The radiation-emitting semiconductor device according to claim 15 , wherein the absorption region has an absorption coefficient for radiation having the cut-off wavelength of at least 5000/cm.

17 . The radiation-emitting semiconductor device according to claim 15 , wherein the cut-off wavelength is shorter than or equal to 820 nm.

18 . The radiation-emitting semiconductor device according to claim 15 , wherein the absorption region has at least one layer, the doping concentration of which is at most half a level of a doping concentration of a semiconductor material arranged between the absorption region and the active region.

19 . The radiation-emitting semiconductor device according to claim 15 , wherein the absorption region is nominally undoped.

20 . The radiation-emitting semiconductor device according to claim 15 , wherein the semiconductor device has a first contact and a second contact that externally electrically contact the semiconductor device and the absorption region is arranged outside a current path extending through the active region between the first contact and the second contact.

21 . The radiation-emitting semiconductor device according to claim 20 , wherein the absorption region has at least one cutout in which a semiconductor layer arranged between the absorption region and the active region is adjacent the first contact or the second contact.

22 . The radiation-emitting semiconductor device according to claim 15 , wherein the semiconductor device has a first contact and a second contact that electrically contact the semiconductor device and the absorption region is arranged in a current path extending through the active region between the first contact and the second contact.

23 . The radiation-emitting semiconductor device according to claim 15 , wherein the active region contains Al x In y Ga 1-x-y As with 0≦x≦1, 0≦y≦1 and x+y≦1.

24 . The radiation-emitting semiconductor device according to claim 15 , wherein the absorption region contains Al x Ga 1-x As with 0.01≦x≦0.1.

25 . The radiation-emitting semiconductor device according to claim 15 , wherein the absorption region contains Al x Ga 1-x As with 0.03≦x≦0.07.

26 . The radiation-emitting semiconductor device according to claim 15 , wherein the absorption region has a quantum structure with at least one quantum layer.

27 . The radiation-emitting semiconductor device according to claim 15 , wherein the absorption region is arranged between the active region and a radiation exit face of the semiconductor body.

28 . The radiation-emitting semiconductor device according to claim 15 , wherein the semiconductor device is a thin-film semiconductor chip in which the semiconductor body is fastened by a materially bonded connection to a carrier and is remote from a growth substrate for the semiconductor layer sequence of the semiconductor body.

29 . A radiation-emitting semiconductor device comprising a semiconductor body with a semiconductor layer sequence,
wherein the semiconductor layer sequence has an active region that generates radiation having a peak wavelength in the near-infrared spectral range and an absorption region, the absorption region at least partially absorbs a shortwave radiation component having a cut-off wavelength which is shorter than the peak wavelength, the absorption region is nominally undoped, and the semiconductor device has a first contact and a second contact that externally electrically contact the semiconductor device and the absorption region is arranged outside a current path extending through the active region between the first contact and the second contact.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Tångring Ivar
• Sundgren Petrus

Classifications

• H10H20/851

  Wavelength conversion means · CPC title

• H10H20/812

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/856

  Reflecting means · CPC title

• H10H20/855

  Optical field-shaping means, e.g. lenses · CPC title