Method of manufacturing ci(g)s-based thin film including aging of slurry comprising binary nanoparticles, and ci(g)s-based thin film manufactured thereby

Patent metadata

Field	Value
Publication number	US-2016284901-A1
Application number	US-201314421866-A
Country	US
Kind code	A1
Filing date	Aug 30, 2013
Priority date	Aug 30, 2013
Publication date	Sep 29, 2016
Grant date	—

Abstract

Disclosed are a method of manufacturing a CI(G)S-based thin film including aging of a slurry composed of binary nanoparticles, and a CI(G)S-based thin film manufactured thereby. The method of manufacturing the CI(G)S-based thin film includes: preparing CI(G)S-based binary nanoparticles; mixing the binary nanoparticles, a solution precursor including a CI(G)S-based element, a solvent and a chelating agent, thus preparing a hybrid slurry; aging the hybrid slurry for 5 to 10 days; subjecting the aged hybrid slurry to coating, thus forming a CI(G)S-based thin film; and subjecting the CI(G)S-based thin film to heat treatment. Thereby, high reproducibility can be ensured upon manufacturing a CI(G)S-based thin film for solar cells, and thus reliability of the produced thin film can be increased.

First claim

1 . A method of manufacturing a CI(G)S-based thin film, comprising:
(a) preparing CI(G)S-based binary nanoparticles; (b) mixing the binary nanoparticles, a solution precursor including a CI(G)S-based element, a solvent and a chelating agent, thus preparing a hybrid slurry; (c) aging the hybrid slurry for 5 to 10 days; (d) subjecting the aged hybrid slurry to non-vacuum coating, thus forming a CI(G)S-based thin film; and (e) subjecting the CI(G)S-based thin film to selenization heat treatment.

2 . The method of claim 1 , wherein the binary nanoparticles comprise any one selected from the group consisting of Cu—Se, In—Se, Ga—Se, Cu—S, In—S, and Ga—S.

3 . The method of claim 1 , wherein (a) is performed using any one process selected from the group consisting of a low-temperature colloidal process, a solvothermal synthesis process, a microwave process, and an ultrasonic synthesis process.

4 . The method of claim 1 , wherein the solution precursor includes at least one CI(G)S-based single element that is not contained in the binary nanoparticles.

5 . The method of claim 1 , wherein the solvent is an alcoholic solvent.

6 . The method of claim 5 , wherein the alcoholic solvent is any one selected from the group consisting of ethanol, methanol, pentanol, propanol, and butanol.

7 . The method of claim 1 , wherein the chelating agent is any one selected from the group consisting of monoethanolamine (MEA), diethanolamine (DEA), triethanolamine (TEA), ethylenediamine, ethylenediamine acetic acid (EDTA), nitrilotriacetic acid (NTA), hydroxyethylenediamine triacetic acid (HEDTA), glycol-bis(2-aminoethylether)-N,N,N′,N′-tetraacetic acid (GEDTA), triethylenetetramine hexaacetic acid (TTHA), hydroxyethyl iminodiacetic acid (HIDA), and dihydroxyethyl glycine (DHEG).

8 . The method of claim 1 , wherein (b) further comprises performing sonication so that slurry components are mixed and dispersed.

9 . The method of claim 1 , wherein (c) further comprises performing sonication during aging.

10 . The method of claim 1 , wherein the non-vacuum coating in (d) is performed using any one process selected from the group consisting of a spraying process, an ultrasonic spraying process, a spin coating process, a doctor blading process, a screen printing process, and an inkjet printing process.

11 . The method of claim 1 , wherein (d) further comprises performing drying, after coating.

12 . The method of claim 11 , wherein the coating and drying in (d) are sequentially repeated and performed a plurality of times.

13 . The method of claim 1 , wherein (e) is performed at a substrate temperature of 500˜530° C. for 30˜60 min.

14 . A CI(G)S-based thin film for use in a light absorption layer of a solar cell, wherein the CI(G)S-based thin film is manufactured by preparing CI(G)S-based binary nanoparticles; mixing the binary nanoparticles, a solution precursor including a CI(G)S-based element, a solvent and a chelating agent, thus preparing a hybrid slurry; aging the hybrid slurry for 5 to 10 days; subjecting the aged hybrid slurry to non-vacuum coating, thus forming a CI(G)S-based thin film; and subjecting the CI(G)S-based thin film to selenization heat treatment.

15 . A solar cell using a CI(G)S-based thin film as a light absorption layer, wherein the CI(G)S-based thin film is manufactured by preparing CI(G)S-based binary nanoparticles; mixing the binary nanoparticles, a solution precursor including a CI(G)S-based element, a solvent and a chelating agent, thus preparing a hybrid slurry; aging the hybrid slurry for 5 to 10 days; subjecting the aged hybrid slurry to non-vacuum coating, thus forming a CI(G)S-based thin film; and
subjecting the CI(G)S-based thin film to selenization heat treatment subjecting.

Assignees

• Korea Energy Research Inst

Inventors

• Cho Ara
• Yoon Kyung Hoon
• Ahn Sejin
• Yun Jae Ho
• Eo Young Joo
• Gwak Jihye
• Ahn Seoungkyu
• Cho Jun Sik
• Yoo Jin Su
• Kim Kihwan
• Park Joo Hyung

Classifications

• H10F77/1694

  the films including Group I-III-VI materials, e.g. CIS or CIGS · CPC title

• H10F71/00

  Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title

• H10F77/126 Primary

  comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS] · CPC title

• H01L31/18

  Electricity · mapped topic

• H01L31/03923

  Electricity · mapped topic