Semiconductor optical device

Patent metadata

Field	Value
Publication number	US-2016284876-A1
Application number	US-201615079615-A
Country	US
Kind code	A1
Filing date	Mar 24, 2016
Priority date	Mar 26, 2015
Publication date	Sep 29, 2016
Grant date	—

Abstract

A semiconductor optical device comprises a substrate including a primary surface with first to fourth areas; a first conductivity-type semiconductor layer disposed on the third and fourth areas; a first semiconductor laminate disposed on the first conductivity-type semiconductor layer and the third area; a resin body disposed on the second to fourth areas; a first electrode connected with the first semiconductor laminate through a first opening of the resin body in the third area; a first pad electrode disposed on the first area; and a wiring conductor extending on a first side and a top of the resin body in the second and third areas and on the first area to connect the first electrode to the first pad electrode. The first side is disposed in the second area. The first semiconductor laminate includes a second conductivity-type semiconductor region being in contact with the first electrode.

First claim

What is claimed is:

1 . A semiconductor optical device comprising:
a substrate including a primary surface, the primary surface having first, second, third and fourth areas; a first conductivity-type semiconductor layer disposed on the third and fourth areas; a first semiconductor laminate for a photodiode, the first semiconductor laminate being disposed on the first conductivity-type semiconductor layer in the third area; a second semiconductor laminate for an optical waveguide, the second semiconductor laminate being disposed on the first conductivity-type semiconductor layer in the fourth area; a third semiconductor laminate disposed on the first conductivity-type semiconductor layer in the third area; a resin body disposed on the second, third and fourth areas; a first electrode connected with the first semiconductor laminate through a first opening of the resin body in the third area; a first pad electrode disposed on the first area; and a wiring conductor disposed on the resin body, the wiring conductor connecting the first electrode to the first pad electrode, the first semiconductor laminate having first, second, third and fourth sides, the second semiconductor laminate forming a butt-joint junction with the first side of the first semiconductor laminate to be coupled with the photodiode, the third semiconductor laminate being in contact with the second side of the first semiconductor laminate, the third and fourth sides of the first semiconductor laminate being covered with a semiconductor protective film disposed on the second area, the resin body covering the semiconductor protective film, the first semiconductor laminate, the second semiconductor laminate and the third semiconductor laminate, the first semiconductor laminate including a second conductivity-type semiconductor layer, the second conductivity-type semiconductor layer being in contact with the first electrode, the wiring conductor extending on a first side and a top of the resin body in the second and third areas and extending on the first area to the first pad electrode, and the first side of the resin body being disposed in the second area.

2 . The semiconductor optical device according to claim 1 , wherein the primary surface has a fifth area,
the semiconductor optical device further comprising a multimode interferometer, the multimode interferometer being disposed on the fifth area and being optically coupled to the optical waveguide.

3 . The semiconductor optical device according to claim 1 , wherein the primary surface includes sixth, seventh and eighth areas, the first conductivity-type semiconductor layer is disposed on the sixth and seventh areas, and the resin body has a second side on the sixth area,
the semiconductor optical device further comprising a second electrode connected to the first conductivity-type semiconductor layer on the seventh area, and a second pad electrode disposed on the seventh area and connected to the second electrode.

4 . The semiconductor optical device according to claim 1 , wherein the first side of the resin body is inclined at an angle of 70 degrees or less with respect to the primary surface of the substrate.

5 . The semiconductor optical device according to claim 1 , wherein
the first semiconductor laminate includes a light receiving layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the light receiving layer includes GaInAs, and the semiconductor protective film includes an InP protective film.

6 . The semiconductor optical device according to claim 1 , wherein the resin body includes BCB resin.

7 . The semiconductor optical device according to claim 1 , further comprising an inorganic insulating film disposed on the first area and the resin body, wherein the wiring conductor is disposed on the inorganic insulating film.

Assignees

• Sumitomo Electric Industries

Inventors

• Yagi Hideki

Classifications

• H10F77/1248

  having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP · CPC title

• H10F77/413

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title

• H10F77/50

  Encapsulations or containers (for photovoltaic modules H10F19/80) · CPC title

• H10F39/18

  Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors · CPC title

• H10F30/2215

  the devices comprising active layers made of only Group III-V materials · CPC title