Semiconductor device, inverter circuit, driving device, vehicle, and elevator

Patent metadata

Field	Value
Publication number	US-2016284682-A1
Application number	US-201615062388-A
Country	US
Kind code	A1
Filing date	Mar 7, 2016
Priority date	Mar 24, 2015
Publication date	Sep 29, 2016
Grant date	—

Abstract

A semiconductor device according to an embodiment includes a plurality of circuit units each including a substrate, a first electrode on a first side of the substrate, a second electrode aligned with the first electrode on the first side of the substrate, a third electrode on a second side of the substrate, and a first switching element and a second switching element. The switching elements are aligned on the substrate between the first electrode, second electrode and third electrode, electrically connected in series between the first electrode and the second electrode, and having the third electrode electrically connected therebetween. In two of the adjacent circuit units, the first side of one circuit unit and the first side of the other circuit unit are adjacent to each other, and the second side of the one and the second side of the other are adjacent to each other.

First claim

What is claimed is:

1 . A semiconductor device comprising a plurality of circuit units, each of the circuit units including:
a substrate; a first electrode provided on a first side of the substrate; a second electrode aligned with the first electrode on the first side of the substrate; a third electrode provided on a second side of the substrate; and a first switching element and a second switching element neighboring the first switching element, the first switching element and the second switching element being aligned on the substrate between the first electrode, the second electrode, and the third electrode, the first switching element and the second switching element being electrically connected in series between the first electrode and the second electrode, and the third electrode being electrically connected between the first switching element and the second switching element.

2 . The semiconductor device according to claim 1 , wherein, in two adjacent circuit units of the plurality of circuit units, the first side of one circuit unit of the two adjacent circuit units and the first side of the other circuit unit are adjacent to each other and the second side of the one circuit unit and the second side of the other circuit unit are adjacent to each other.

3 . The semiconductor device according to claim 1 , wherein the first electrode of each of the circuit units are mutually connected and the second electrode of each of the circuit units are mutually connected.

4 . The semiconductor device according to claim 1 , wherein each of the circuit units includes a capacitor, the capacitor is electrically connected between the first electrode and the second electrode, the first electrode is electrically in between the capacitor and the first switching element, and the second electrode is electrically in between the capacitor and the second switching element.

5 . The semiconductor device according to claim 1 , wherein, in two adjacent circuit units of the plurality of circuit units, the first electrode of one circuit unit and the second electrode of the other circuit unit are adjacent to each other.

6 . The semiconductor device according to claim 1 , wherein, in two adjacent circuit units of the plurality of circuit units, the first electrode of one circuit unit of the two adjacent circuit units and the first electrode of the other circuit unit are adjacent to each other, or the second electrode of the one circuit unit and the second electrode of the other circuit unit are adjacent to each other.

7 . The semiconductor device according to claim 1 , wherein a direction of current flowing between the first electrode and the third electrode is opposite to a direction of current flowing between the third electrode and the second electrode.

8 . The semiconductor device according to claim 1 , wherein the second side is located on an opposite side of the first side, interposing the substrate.

9 . A semiconductor device comprising:
a plurality of first circuit units arranged side by side, each of the first circuit units including: a first substrate; a first electrode provided on a first side of the first substrate; a second electrode aligned with the first electrode on the first side of the first substrate; a third electrode provided on a second side of the first substrate; and a first switching element and a second switching element neighboring the first switching element, the first switching element and the second switching element being aligned with each other on the first substrate between the first electrode, the second electrode, and the third electrode, the first switching element and the second switching element being electrically connected in series between the first electrode and the second electrode, and the third electrode being electrically connected between the first switching element and the second switching element; and a plurality of second circuit units arranged side by side, each of the second circuit units including: a second substrate; a first electrode provided on a first side of the second substrate; a second electrode aligned with the first electrode on the first side of the second substrate; a third electrode provided on a second side of the second substrate; and a first switching element and a second switching element, the first switching element and the second switching element being aligned on the second substrate between the first electrode, the second electrode, and the third electrode, the first switching element and the second switching element being electrically connected in series between the first electrode and the second electrode, and the third electrode being electrically connected between the first switching element and the second switching element; wherein in each of the first circuit units and the second circuit units, the first substrate and the second substrate face each other, the first electrode of one of the first and second circuit units and the second electrode of the other one of the first and second circuit units face each other, in two adjacent circuit units of the plurality of the first circuit units, the first side of one circuit unit of the adjacent circuit units and the first side of the other circuit unit are adjacent to each other and the second side of the one circuit unit and the second side of the other circuit unit are adjacent to each other, and in two adjacent circuit units of the plurality of the second circuit units, the first side of one circuit unit of the adjacent circuit units and the first side of the other circuit unit are adjacent to each other and the second side of the one circuit unit and the second side of the other circuit unit are adjacent to each other.

10 . The semiconductor device according to claim 9 , wherein the first electrode of each of the first circuit units and the second circuit units are mutually connected and the second electrode of each of the first circuit units and the second circuit units are mutually connected.

11 . The semiconductor device according to claim 9 , wherein each of the first circuit units and the second circuit units includes a capacitor, the capacitor is electrically connected between the first electrode and the second electrode, the first electrode is electrically in between the capacitor and the first switching element, and the second electrode is electrically in between the capacitor and the second switching element.

12 . The semiconductor device according to claim 9 , wherein a direction of current flowing between the first electrode and the third electrode is opposite to a direction of current flowing between the third electrode and the second electrode.

13 . A semiconductor device comprising a first circuit unit and a second circuit unit, each of the first circuit unit and the second circuit unit including:
a substrate; a first electrode provided on a first side of the substrate; a second electrode aligned with the first electrode on the first side of the substrate; a third electrode provided on a second side of the substrate; and a first switching element and a second switching element neighboring the first switching element, the first switching element and the second switching element being aligned on the substrate between the first electrode, the second electrode, and the third electrode, the first switching element and the second switching element being electrically connected in series between the first electrode and the second electrode, and the third electrode being electrically connected between the first switching element and the second switching element, wherein the first side of the first circuit u

Assignees

• Toshiba Kk

Inventors

• Takao Kazuto
• Lljima Ryosuke
• Shimizu Tatsuo
• Ohashi Teruyuki

Classifications

• H02M7/003

  Constructional details, e.g. physical layout, assembly, wiring or busbar connections · CPC title

• H10D89/921

  characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses · CPC title

• H10D84/811

  Combinations of field-effect devices and one or more diodes, capacitors or resistors · CPC title

• H10D84/615

  Combinations of vertical BJTs and one or more of resistors or capacitors · CPC title

• H10D84/144

  in antiparallel diode configurations · CPC title