Method for Producing a Circuit Carrier Arrangement Having a Carrier which has a Surface Formed by an Aluminum/Silicon Carbide Metal Matrix Composite Material

US2016284664A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016284664-A1
Application numberUS-201615070089-A
CountryUS
Kind codeA1
Filing dateMar 15, 2016
Priority dateMar 25, 2015
Publication dateSep 29, 2016
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

According to a method for producing a circuit carrier arrangement, a carrier which has a surface section formed by an aluminum/silicon carbide metal matrix composite material is provided. A circuit carrier, which has an insulation carrier with a lower side onto which a lower metallization layer is applied, is also provided. A bonding layer, which contains a glass, is generated on the surface section. A material-fit connection between the bonding layer and the circuit carrier is produced by means of a connecting layer.

First claim

Opening claim text (preview).

What is claimed is: 1 . A method for producing a circuit carrier arrangement, which comprises: provision of a carrier which has a surface section formed by an aluminum/silicon carbide metal matrix composite material; provision of a circuit carrier which has an insulation carrier with a lower side onto which a lower metallization layer is applied; generation of a bonding layer, which contains a glass, on the surface section; production of a material-fit connection between the bonding layer and the circuit carrier by means of a connecting layer. 2 . The method as claimed in claim 1 , wherein the generation of the bonding layer containing a glass is carried out by: applying a paste containing a glass onto the surface section; drying the applied paste; subjecting the carrier and the dried paste lying on its surface section to a heat treatment during which the glass contained in the dried paste is melted; and cooling the carrier and the dried paste, containing the molten glass, lying on its surface section after the heat treatment to below the glass transition temperature of the glass. 3 . The method as claimed in claim 2 , wherein the carrier and the dried paste lying on its surface section are not heated to more than 600° C. 4 . The method as claimed in claim 2 , wherein the paste contains a metal powder. 5 . The method as claimed in claim 4 , wherein the metal powder contains precisely one or any combination of two or more of the following materials: Cu, Ag, Pd, Au. 6 . The method as claimed in claim 1 , wherein the bonding layer has a thickness of more than 5 μm. 7 . The method as claimed in claim 1 , wherein the bonding layer ( 3 ) has a thickness (d 3 ) of less than 100 μm or less than 50 μm or less than 15 μm. 8 . The method as claimed in claim 7 , wherein the application of the paste containing the glass is carried out by screen or stencil printing. 9 . The method as claimed in claim 1 , wherein the glass ( 30 ) has a glass transition temperature below 600° C. 10 . The method as claimed in claim 1 , wherein the connecting layer is configured as a solder layer, or as a layer which contains a sintered metal powder. 11 . The method as claimed in claim 1 , wherein the connecting layer is directly adjacent to the bonding layer; and/or is directly adjacent to the lower metallization layer. 12 . The method as claimed in claim 1 , wherein the insulation carrier of the circuit carrier provided has an upper side, opposite the lower side onto which an upper metallization layer is applied. 13 . The method as claimed in claim 1 , wherein the circuit carrier provided is equipped with a semiconductor chip. 14 . The method as claimed in claim 1 , wherein, after the production of the material-fit connection, no nickel layer is arranged between the surface section and the connecting layer; and/or no nickel layer is arranged between the surface section and the bonding layer ( 3 ).

Assignees

Inventors

Classifications

  • between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

  • using a polymer adhesive, e.g. an adhesive based on silicone or epoxy · CPC title

  • Soldering or alloying · CPC title

  • Applying EM radiation, e.g. induction heating or using a laser · CPC title

  • Connecting techniques · CPC title

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Frequently asked questions

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What does patent US2016284664A1 cover?
According to a method for producing a circuit carrier arrangement, a carrier which has a surface section formed by an aluminum/silicon carbide metal matrix composite material is provided. A circuit carrier, which has an insulation carrier with a lower side onto which a lower metallization layer is applied, is also provided. A bonding layer, which contains a glass, is generated on the surface se…
Who is the assignee on this patent?
Infineon Technologies Ag
What technology area does this patent fall under?
Primary CPC classification H10W40/255. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Sep 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).