Package architecture utilizing wafer to wafer bonding
US-2024379487-A1 · Nov 14, 2024 · US
US2016284664A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016284664-A1 |
| Application number | US-201615070089-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 15, 2016 |
| Priority date | Mar 25, 2015 |
| Publication date | Sep 29, 2016 |
| Grant date | — |
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According to a method for producing a circuit carrier arrangement, a carrier which has a surface section formed by an aluminum/silicon carbide metal matrix composite material is provided. A circuit carrier, which has an insulation carrier with a lower side onto which a lower metallization layer is applied, is also provided. A bonding layer, which contains a glass, is generated on the surface section. A material-fit connection between the bonding layer and the circuit carrier is produced by means of a connecting layer.
Opening claim text (preview).
What is claimed is: 1 . A method for producing a circuit carrier arrangement, which comprises: provision of a carrier which has a surface section formed by an aluminum/silicon carbide metal matrix composite material; provision of a circuit carrier which has an insulation carrier with a lower side onto which a lower metallization layer is applied; generation of a bonding layer, which contains a glass, on the surface section; production of a material-fit connection between the bonding layer and the circuit carrier by means of a connecting layer. 2 . The method as claimed in claim 1 , wherein the generation of the bonding layer containing a glass is carried out by: applying a paste containing a glass onto the surface section; drying the applied paste; subjecting the carrier and the dried paste lying on its surface section to a heat treatment during which the glass contained in the dried paste is melted; and cooling the carrier and the dried paste, containing the molten glass, lying on its surface section after the heat treatment to below the glass transition temperature of the glass. 3 . The method as claimed in claim 2 , wherein the carrier and the dried paste lying on its surface section are not heated to more than 600° C. 4 . The method as claimed in claim 2 , wherein the paste contains a metal powder. 5 . The method as claimed in claim 4 , wherein the metal powder contains precisely one or any combination of two or more of the following materials: Cu, Ag, Pd, Au. 6 . The method as claimed in claim 1 , wherein the bonding layer has a thickness of more than 5 μm. 7 . The method as claimed in claim 1 , wherein the bonding layer ( 3 ) has a thickness (d 3 ) of less than 100 μm or less than 50 μm or less than 15 μm. 8 . The method as claimed in claim 7 , wherein the application of the paste containing the glass is carried out by screen or stencil printing. 9 . The method as claimed in claim 1 , wherein the glass ( 30 ) has a glass transition temperature below 600° C. 10 . The method as claimed in claim 1 , wherein the connecting layer is configured as a solder layer, or as a layer which contains a sintered metal powder. 11 . The method as claimed in claim 1 , wherein the connecting layer is directly adjacent to the bonding layer; and/or is directly adjacent to the lower metallization layer. 12 . The method as claimed in claim 1 , wherein the insulation carrier of the circuit carrier provided has an upper side, opposite the lower side onto which an upper metallization layer is applied. 13 . The method as claimed in claim 1 , wherein the circuit carrier provided is equipped with a semiconductor chip. 14 . The method as claimed in claim 1 , wherein, after the production of the material-fit connection, no nickel layer is arranged between the surface section and the connecting layer; and/or no nickel layer is arranged between the surface section and the bonding layer ( 3 ).
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
using a polymer adhesive, e.g. an adhesive based on silicone or epoxy · CPC title
Soldering or alloying · CPC title
Applying EM radiation, e.g. induction heating or using a laser · CPC title
Connecting techniques · CPC title
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