Semiconductor device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-2016284657-A1
Application number	US-201615078474-A
Country	US
Kind code	A1
Filing date	Mar 23, 2016
Priority date	Mar 24, 2015
Publication date	Sep 29, 2016
Grant date	—

Abstract

An electronic device and a method of making an electronic device. As non-limiting examples, various aspects of this disclosure provide various methods of making electronic devices, and electronic devices manufactured thereby, that comprise utilizing a compressed interconnection structure (e.g., a compressed solder ball, etc.) in an encapsulating process to form an aperture in an encapsulant. The compressed interconnection structure may then be reformed in the aperture.

First claim

What is claimed is:

1 . An electronic device comprising:
an electronic component comprising a conductive pad; an encapsulating material on the electronic component; an aperture through the encapsulating material that exposes the conductive pad, the aperture defined by an inner surface of the encapsulating material and shaped like a portion of an oblate ellipsoid; and a conductive interconnection structure that extends through the aperture and protrudes from the encapsulating material, is electrically connected to the conductive pad, and is separated from at least a portion of the inner surface of the encapsulating material.

2 . The electronic device of claim 1 , wherein the volume of the aperture is within 10% of the volume of the conductive interconnection structure.

3 . The electronic device of claim 1 , wherein the volume of the aperture is the same as the volume of the conductive interconnection structure.

4 . The electronic device of claim 1 , wherein the aperture is shaped like ¼ to ¾ of an oblate ellipsoid.

5 . The electronic device of claim 1 , wherein the oblate ellipsoid comprises a first semi-principal axis and a second semi-principal axis that is at least 10% longer than the first semi-principal axis.

6 . The electronic device of claim 1 , wherein a first portion of the aperture has a first radius of curvature that is less than a radius of curvature of the conductive interconnection structure, and a second portion of the aperture has a second radius of curvature that is greater than the radius of curvature of the conductive interconnection structure.

7 . The electronic device of claim 1 , wherein the aperture is shaped like an oblate ellipsoid with a flattened top and a flattened bottom.

8 . The electronic device of claim 1 , wherein the electronic component comprises a semiconductor die.

9 . The electronic device of claim 1 , wherein the electronic component comprises a signal distribution structure attached to a semiconductor die.

10 . The electronic device of claim 1 , wherein the conductive interconnection structure is a solder ball.

11 . The electronic device of claim 1 , wherein the encapsulating material comprises a molding material.

12 . The electronic device of claim 1 , comprising a substrate and a substrate conductive pad, wherein the conductive interconnection structure is a conductive ball that is connected to the conductive pad and to the substrate conductive pad.

13 . An electronic device comprising:
an electronic component comprising a conductive pad; an encapsulating material on the electronic component, wherein the encapsulating material has a top surface and a bottom surface opposite the top surface and that faces the electronic component; an aperture through the encapsulating material that exposes the conductive pad, wherein the aperture is defined by an inner surface of the encapsulating material that has a continually changing upward slope; and a conductive interconnection structure that extends through the aperture and protrudes from the top surface of the encapsulating material, is electrically connected to the conductive pad, and is separated from at least a portion of the inner surface of the encapsulating material.

14 . The electronic device of claim 13 , wherein the volume of the aperture is within 10% of the volume of the conductive interconnection structure.

15 . The electronic device of claim 13 , wherein at least a portion of the aperture is shaped like a portion of a compressed sphere.

16 . The electronic device of claim 15 , wherein the compressed sphere has a vertical height and a horizontal width that is at least 10% greater than the vertical height.

17 . The electronic device of claim 13 , wherein the electronic component is a semiconductor die and the conductive interconnection structure is a solder ball.

18 . An electronic device comprising:
an electronic component comprising a conductive pad; an encapsulating material on the electronic component, wherein the encapsulating material has a top surface and a bottom surface opposite the top surface and that faces the electronic component; an aperture through the encapsulating material that exposes the conductive pad, wherein the aperture is defined by an inner surface of the encapsulating material; and a conductive interconnection structure that extends through the aperture and protrudes from the top surface of the encapsulating material, is electrically connected to the conductive pad, and is separated from at least a portion of the inner surface of the encapsulating material by a gap, wherein the gap between the inner surface of the encapsulating material and the conductive interconnection structure continually increases between a bottom end of the aperture and a point of maximum width of the aperture.

19 . The electronic device of claim 18 , wherein the volume of the aperture is the same as the volume of the conductive interconnection structure.

20 . The electronic device of claim 18 , wherein at least a portion of the aperture is shaped like a portion of a compressed sphere.

Assignees

• Amkor Technology Inc

Inventors

• Han Gyu Wan
• Kim Jin Seong
• Cho Byong Woo

Classifications

• H10W74/142

  the encapsulations exposing the passive side of the semiconductor body · CPC title

• H10W70/63

  Vias, e.g. via plugs · CPC title

• H10W72/942

  relative to underlying supporting features, e.g. bond pads, RDLs or vias · CPC title

• H10W72/29

  Bond pads specially adapted therefor · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title