Defect planarization

Patent metadata

Field	Value
Publication number	US-2016284538-A1
Application number	US-201615077545-A
Country	US
Kind code	A1
Filing date	Mar 22, 2016
Priority date	Mar 23, 2015
Publication date	Sep 29, 2016
Grant date	—

Abstract

Aspects of the disclosure pertain to methods of forming planar amorphous carbon layers on patterned substrates. Layers formed according to embodiments outlined herein have may improve manufacturing yield by making the top surface of an amorphous carbon layer more planar despite underlying topography or stoichiometric variations. The amorphous carbon layers may comprise carbon and hydrogen, may consist of carbon and hydrogen or may comprise or consist of carbon, hydrogen and nitrogen in embodiments. Methods described herein may comprise introducing a hydrogen-containing precursor at a relatively high ratio relative to a hydrocarbon into a substrate processing region and concurrently applying a local plasma power capacitively to the substrate processing region to form the planar layer. Alternatively an atomic flow ratio of hydrogen:carbon may begin low and increase discretely or smoothly during formation of the amorphous carbon layer.

First claim

1 . A method of forming a carbon layer on a patterned substrate, the method comprising:
placing the patterned substrate in a substrate processing region of a substrate processing chamber; flowing a hydrogen-containing precursor into the substrate processing region; flowing a hydrocarbon precursor into the substrate processing region; applying plasma power to the substrate processing region; forming a plasma from a combination of the hydrogen-containing precursor and the hydrocarbon precursor in the substrate processing region, wherein the hydrogen-containing precursor comprises hydrogen; maintaining a first atomic flow rate ratio (H:C) between zero and two; forming a first portion of a carbon layer having a first top interface; increasing an atomic flow rate ratio from the first atomic flow rate ratio to a second atomic flow rate ratio (H:C) greater than two; maintaining the second atomic flow rate ratio; and forming a second portion of the carbon layer having a second top interface.

2 . The method of forming a planar layer on a patterned substrate of claim 1 wherein the second atomic flow rate ratio (H:C) is greater than three.

3 . The method of forming a planar layer on a patterned substrate of claim 1 wherein the second top interface is more planar than the first top interface.

4 . The method of forming a planar layer on a patterned substrate of claim 1 wherein forming the plasma comprises applying an RF power capacitively.

5 . The method of forming a planar layer on a patterned substrate of claim 1 wherein the hydrogen-containing precursor further comprises nitrogen.

6 . The method of forming a planar layer on a patterned substrate of claim 1 wherein forming the plasma comprises applying an RF power at a frequency greater than 100 kHz.

7 . A method of forming a planar carbon layer on a patterned substrate, the method comprising:
placing the patterned substrate in a substrate processing region of a substrate processing chamber; flowing a hydrogen-containing precursor into the substrate processing region; flowing a hydrocarbon precursor into the substrate processing region, wherein the hydrocarbon precursor comprises carbon and hydrogen; forming a precursor combination of the hydrogen-containing precursor and the hydrocarbon precursor in the substrate processing region; applying plasma power to the precursor combination in the substrate processing region; forming a first carbon layer having a first top interface; smoothly increasing an atomic flow rate ratio from a first atomic flow rate ratio below two to a second atomic flow rate ratio above three (H:C); and forming a second carbon layer having a second top interface, wherein the planar carbon layer comprises the first carbon layer and the second carbon layer.

8 . The method of forming a planar carbon layer on a patterned substrate of claim 7 wherein the hydrogen-containing precursor and the hydrocarbon precursor are flowed into the substrate processing region at an atomic flow rate ratio (H:C) of between three and seven.

9 . The method of forming a planar carbon layer on a patterned substrate of claim 7 wherein the hydrogen-containing precursor comprises at least one member of the group consisting of H 2 , NH 3 , N 2 H 4 and N 2 H 2 .

10 . The method of forming a planar carbon layer on a patterned substrate of claim 7 wherein the hydrocarbon precursor consists of carbon and hydrogen.

11 . A method of forming a planar carbon layer on a patterned substrate, the method comprising:
placing the patterned substrate in a substrate processing region of a substrate processing chamber; flowing a hydrogen-containing precursor into the substrate processing region and combining the hydrogen-containing precursor with a hydrocarbon precursor; forming a plasma from the combination of the hydrogen-containing precursor and the hydrocarbon precursor by applying plasma power to the substrate processing region; and forming the planar carbon layer, wherein the planar carbon layer comprises carbon and hydrogen.

12 . The method of forming a planar carbon layer on a patterned substrate of claim 11 wherein the hydrogen-containing precursor and the hydrocarbon precursor are flowed into the substrate processing region at an atomic flow rate ratio (H:C) of greater than three.

13 . The method of forming a planar carbon layer on a patterned substrate of claim 11 wherein the planar carbon layer is amorphous.

14 . The method of forming a planar carbon layer on a patterned substrate of claim 11 wherein the planar carbon layer consists of hydrogen and carbon.

15 . The method of forming a planar carbon layer on a patterned substrate of claim 11 wherein forming the planar carbon layer further comprises concurrent etching of high points faster than low points during formation of the planar carbon layer.

Assignees

• Applied Materials Inc

Inventors

• Reilly Patrick James
• Bethke David Alan
• Lee Kwangduk

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/405 Primary

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title