Hydrofluoroolefin Etching Gas Mixtures

Patent metadata

Field	Value
Publication number	US-2016284523-A1
Application number	US-201414777865-A
Country	US
Kind code	A1
Filing date	Mar 28, 2014
Priority date	Mar 28, 2013
Publication date	Sep 29, 2016
Grant date	—

Abstract

The present invention relates to hydrofluorolefin compositions useful for removing surface deposits in CVD chambers, and relates to methods for removing surface deposits from the interior of a chemical vapor deposition chamber by using an activated gas mixture created by activating a gas mixture in the chamber or in a remote chamber, where the gas mixture comprises a hydrofluorolefin.

First claim

1 . An etch gas mixture for cleaning CVD or PECVD chambers, comprising:
a hydrofluorolefin, wherein said hydrofluorolefin is selected from the group consisting of: HFO-1123, HFO-1438, HFO-1225ye, HFO-1225zc, HFO-1234yf, HFO-1234ze, HFO-1216, HFO-1336mzz, HFO-1336ze, HFO-1336yf, HFO-1336pyy, PFC-1318my, HFOC-1327myz, HFO-1327ye, HFO-1327cze, HFO-1327et, HFO-1327, HFO-1345czf, HFO-1345fyc, HFO-1345cye, HFO-1345cyf, HFO-1345eye, HFO-1345pyz, HFO-1345pyy, HFO-1345zy, PFBY2 and HFO-1233zd, and oxygen.

2 . The etch gas mixture of claim 1 , further comprising a carrier gas.

3 . The etch gas mixture of claim 1 , wherein the carrier gas is He, Ar, or N 2,

4 . The etch gas mixture of claim 1 , wherein the etch gas mixture further comprises a second etch gas, wherein the second etch gas is a perfluorocarbon SF6, or NF 3.

5 . The etch gas mixture of claim 1 , wherein the perfluorocarbon is selected from the group consisting of tetrafluoromethane, hexafluoroethane, octafluoropropane, perfluorotetrahydrofuran, hexaflurobutadiene, and octafluorocyclobutane.

6 . A method for removing surface deposits from a surface in a process chamber, comprising:
a.) activating a gas mixture comprising oxygen and a hydrofluorolefin wherein the molar percentage of hydrofluroolefin in the said gas mixture is from about 5% to about 99%, b.) contacting said activated gas mixture with the surface deposits and thereby removing at least some of said deposits wherein said hydrofluorolefin is selected from the group consisting of: HFO-1123, HFO-1438, HFO-1225ye, HFO-1225zc, HFO-1234yf, HFO-1234ze, HFO-1216, HFO-1336mzz, HFO-1336ze, HFO-1336yf, HFO-1336pyy, PFC-1318my, HFOC-1327myz, HFO-1327ye, HFO-1327cze, HFO-1327et, HFO-1327, HFO-1345czf, HFO-1345fyc, HFO-1345cye, HFO-1345cyf, HFO-1345eye, HFO-1345pyz, HFO-1345pyy, HFO-1345zy, PFBY2 and HFO-1233zd, and wherein optionally, the step of activation said gas mixture takes place in a remote chamber.

7 . The method of claim 6 wherein said process chamber is the interior of a deposition chamber that is used in fabricating electronic devices.

8 . The method of claim 6 wherein the hydrofluoroolefin is HFO-1336mzz, HFO-1234yf or HFO-1234ze.

9 . The method of claim 6 wherein the said surface deposit is selected from the group consisting of silicon nitride, silicon oxynitride, silicon carbonitride, tungsten nitride, titanium nitride, and tantalum nitride.

10 . The method of claim 6 , wherein the said surface deposit is silicon nitride.

11 . The method of claim 6 , wherein the gas mixture further comprises oxygen in molar ratio of oxygen: hydrofluoroolefin that is at least about 1:1.

12 . The method of claim 11 , wherein the pressure in the process chamber is no more than 30 torr.

13 . The method of claim 11 , wherein the pressure in the remote chamber is no more than 50 torr.

14 . The etch gas mixture of claim 1 , wherein said hydrofluorolefin is selected from the group consisting of: HFO-1438, HFO-1234yf and HFO-1336mzz.

15 . The etch gas mixture of claim 14 , wherein said hydrofluorolefin is selected from the group consisting of: HFO-1234yf and HFO-1336mzz.

16 . The method of claim 6 , wherein said hydrofluorolefin is selected from the group consisting of: HFO-1438, HFO-1234yf and HFO-1336mzz.

17 . The method of claim 16 , wherein the hydrofluoroolefin is selected from the group consisting of: HFO-1336mzz and HFO-1234yf.

Assignees

• Chemours Co Fc Llc

Inventors

• Loh Gary
• Nappa Mario Joseph
• Lee Hao-Chun
• Lee Tai-Chen

Classifications

• H01J37/32862 Primary

  In situ cleaning of vessels and/or internal parts · CPC title

• C09K13/00

  Etching, surface-brightening or pickling compositions (for glass C03C15/00, {C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338}; for metallic material C23F, C23G1/00, C25F1/00; {for semi-conductors H10P52/40}) · CPC title

• C11D7/30

  Halogenated hydrocarbons · CPC title

• H01J37/32357

  Generation remote from the workpiece, e.g. down-stream · CPC title

• H01J2237/334

  Etching · CPC title