Stack Capacitor Having High Volumetric Efficiency

US2016284477A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016284477-A1
Application numberUS-201615170083-A
CountryUS
Kind codeA1
Filing dateJun 1, 2016
Priority dateDec 14, 2011
Publication dateSep 29, 2016
Grant date

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

An improved capacitor and method of making an improved capacitor is set forth. The capacitor has planer anodes with each anode comprising a fusion end and a separated end and the anodes are in parallel arrangement with each anode in direct electrical contact with all adjacent anodes at the fusion end. A dielectric is on the said separated end of each anode wherein the dielectric covers at least an active area of the capacitor. Spacers separate adjacent dielectrics and the interstitial space between the adjacent dielectrics and spacers has a conductive material in therein.

First claim

Opening claim text (preview).

1 - 24 . (canceled) 25 . A method of making a capacitor comprising: providing planer anodes wherein each anode of said anodes comprises a fusing end and a separated end wherein each said anode comprises a dielectric covering at least a portion of said separated end; applying a matrix to said dielectric of at least a portion of said anodes wherein said matrix comprises a binder and a spacer; forming a layered stack of said anodes wherein at least one matrix is between adjacent dielectrics; fusing said anodes at said fusing end; partially removing said binder thereby forming interstitial spaces between said adjacent dielectrics with said adjacent dielectrics separated by said spacers; inserting a conductive material in said interstitial spaces and over an exterior of said layered stack; electrically attaching an anode lead to said fused anodes; and electrically attaching a cathode lead to said conductive material. 26 . The method of forming a capacitor of claim 25 further comprising: forming a conductive carbon layer on said conductive coating over said exterior of said layered stack prior to said electrically attaching said cathode lead. 27 . The method of forming a capacitor of claim 26 further comprising: forming a metal layer on said conductive carbon layer prior to said electrically attaching said cathode lead. 28 . The method of forming a capacitor of claim 25 wherein said removing of said binder includes heating said binder. 29 . The method of forming a capacitor of claim 25 wherein said anode comprises a material selected from the group consisting of Ta, Nb, Al, NbO, Ti, Zr and alloys thereof. 30 . The method of forming a capacitor of claim 25 wherein said conductive material is selected from intrinsically conductive polymers, charge transfer conducting compounds or conductive oxides. 31 . The method of forming a capacitor of claim 30 wherein said conductive material comprises a polythiophene. 32 . The method of forming a capacitor of claim 31 wherein said conductive material comprises poly 3,4-ethylene dioxythiophene. 33 . The method of forming a capacitor of claim 30 wherein said conductive material comprises manganese dioxide. 34 . The method of forming a capacitor of claim 30 wherein said inserting said conductive polymer comprises introduction of an oxidizer and a monomer into said interstitial spaces. 35 . The method of forming a capacitor of claim 34 wherein said monomer is introduced into said interstitial space prior to introduction of said oxidizer. 36 . The method of forming a capacitor of claim 30 wherein said inserting said conductive polymer comprises introduction of a slurry comprising said polymer to said interstitial space. 37 . The method of forming a capacitor of claim 25 wherein said spacer comprises carbonized fibers. 38 . The method of forming a capacitor of claim 37 wherein said fibrous materials have an average cross-sectional size at least 1 to no more than 100 μm along the diameter direction. 39 . The method of forming a capacitor of claim 37 wherein said carbonized fibers have a length of at least 1 to no more than 150 μm. 40 . The method of forming a capacitor of claim 25 wherein adjacent dielectrics are separated by at least 1 to no more than 100 μm. 41 . The method of forming a capacitor of claim 25 further comprising carbonizing a polymer to form said spacer. 42 . The method of forming a capacitor of claim 41 wherein said polymer comprises hydroxy or carboxylic groups. 43 . The method of forming a capacitor of claim 41 wherein said polymer comprises at least one material selected from cellulose and pentosan. 44 . The method of forming a capacitor of claim 43 wherein said polymer comprises 25-85 wt % cellulose. 45 . The method of forming a capacitor of claim 43 wherein said polymer comprises 15-75 wt % pentosan. 46 . The method of forming a capacitor of claim 25 wherein said binder comprises a material selected from the group consisting of fibrin, cellulose, glucose, protein and gelatin. 47 . The method of forming a capacitor of claim 46 wherein said binder is starch. 48 . The method of forming a capacitor of claim 25 wherein said inserting said conductive material comprises applying vacuum to said layered stack. 49 . The method of forming a capacitor of claim 25 wherein said fusing said anodes comprises welding. 50 . The method of forming a capacitor of claim 25 comprising at least 2 planer anodes to no more than 80 planer anodes. 51 . The method of forming a capacitor of claim 25 wherein said forming said stacked layer comprises alternating anodes comprising said matrix coating with anodes not comprising said matrix coating. 52 - 74 . (canceled)

Assignees

Inventors

Classifications

  • characterised by the material (H01G11/22 takes precedence) · CPC title

  • H01G9/15Primary

    Solid electrolytic capacitors (H01G11/00 takes precedence) · CPC title

  • Inorganic semiconducting electrolytes, e.g. MnO2 · CPC title

  • Electrodes {or formation of dielectric layers thereon} · CPC title

  • Electric condenser making · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US2016284477A1 cover?
An improved capacitor and method of making an improved capacitor is set forth. The capacitor has planer anodes with each anode comprising a fusion end and a separated end and the anodes are in parallel arrangement with each anode in direct electrical contact with all adjacent anodes at the fusion end. A dielectric is on the said separated end of each anode wherein the dielectric covers at least…
Who is the assignee on this patent?
Kemet Electronics Corp
What technology area does this patent fall under?
Primary CPC classification H01G9/15. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Sep 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).