Method for fabricating silicon carbide assemblies

US2016284427A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016284427-A1
Application numberUS-201615176942-A
CountryUS
Kind codeA1
Filing dateJun 8, 2016
Priority dateSep 23, 2011
Publication dateSep 29, 2016
Grant date

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  5. First independent claim

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Abstract

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A method for fabricating assemblies includes providing first and second components that include ceramic, metal, or composite; positioning a multiphase joining interlayer between the first and second components, wherein the joining interlayer includes a first phase that melts at a first temperature and a second phase interspersed throughout the first phase, and wherein the second phase melts at a second temperature that is lower than the melting temperature of the first phase; and heating the joining interlayer to a temperature in the range of 725° C. to 1450° C. for a predetermined period of time to soften the first phase and melt the second phase, wherein the first phase remains in a solid or a semi-solid state, and wherein the second phase segregates to the boundaries of the first phase and transforms the joining interlayer into a substantially porosity-free adherent material that joins the first component to the second component.

First claim

Opening claim text (preview).

What is claimed: 1 ) A method for fabricating assemblies, comprising: (a) providing a first component, wherein the first component includes ceramic, metal, or composite; (b) providing a second component, wherein the second component includes ceramic, metal, or composite; (c) positioning a multiphase joining interlayer between the first and second components, wherein the joining interlayer includes a first phase that melts at a first temperature and a second phase interspersed throughout the first phase, and wherein the second phase melts at a second temperature that is lower than the melting temperature of the first phase; and (d) heating the joining interlayer to a temperature in the range of 725° C. to 1450° C. for a predetermined period of time, wherein heating the joining interlayer to a temperature in the range of 725° C. to 1450° C. for a predetermined period of time softens the first phase and melts the second phase, wherein the first phase remains in a solid or a semi-solid state, and wherein the second phase segregates to the boundaries of the first phase and transforms the joining interlayer into a substantially porosity-free adherent material that joins the first component to the second component. 2 ) The method of claim 1 , wherein the first component is a silicon carbide ceramic-matrix composite. 3 ) The method of claim 1 , wherein the second component is a silicon carbide ceramic-matrix composite. 4 ) The method of claim 1 , wherein the first phase of the multiphase joining interlayer includes silicon and the second phase of the multiphase joining interlayer includes aluminum. 5 ) The method of claim 1 , wherein the first phase of the multiphase joining interlayer includes niobium silicide or titanium silicide. 6 ) The method of claim 1 , wherein the multiphase joining interlayer is a silicon nitride joining interlayer. 7 ) The method of claim 6 , wherein the silicon nitride joining interlayer is formed by heating an Al—Si alloy to a temperature in the range of about 1100° C. to 1450° C. in high-purity nitrogen for a period of at least five minutes to several hours. 8 ) The method of claim 1 , wherein the multiphase joining interlayer is a hypereutectic Al-80 wt % Si alloy. 9 ) The method of claim 8 , wherein the hypereutectic Al-80 wt % Si alloy joining interlayer is heated in a vacuum at about 1330° C. for about 13 minutes. 10 ) The method of claim 1 , wherein the multiphase joining interlayer includes three distinct layers, wherein the first and third layers are multiphase alloys, and wherein the second layer is a metal sandwiched between the first and third layers, 11 ) The method of claim 10 , wherein the first and third layers are Al-12 wt % Si alloy and the second layer is Al-70 wt % Si alloy. 12 ) The method of claim 10 , wherein the first and third layers are Al-80 wt % Si alloy and the second layer is a metal selected from the group consisting of titanium, zirconium, molybdenum, niobium, and combinations thereof. 13 ) The method of claim 1 , wherein the transformed joining interlayer has a shear strength in excess of 125 MPa. 14 ) A method for fabricating assemblies for use in nuclear reactors, comprising: (a) providing a first silicon carbide component; (b) providing a second silicon carbide component; (c) positioning a multiphase joining interlayer between the first and second components, wherein the joining interlayer includes a first phase that melts at a first temperature and a second phase interspersed throughout the first phase, and wherein the second phase melts at a second temperature that is lower than the melting temperature of the first phase; and (d) heating the joining interlayer to a temperature in the range of 725° C. to 1450° C. for a predetermined period of time, wherein heating the joining interlayer to a temperature in the range of 725° C. to 1450° C. for a predetermined period of time softens the first phase and melts the second phase, wherein the first phase remains in a solid or a semi-solid state, and wherein the second phase segregates to the boundaries of the first phase and transforms the joining interlayer into a substantially porosity-free adherent material that joins the first component to the second component. 15 ) The method of claim 14 , wherein the first phase of the multiphase joining interlayer includes silicon and the second phase of the multiphase joining interlayer includes aluminum. 16 ) The method of claim 14 , wherein the multiphase joining interlayer is a silicon nitride joining interlayer formed by heating an Al—Si alloy to a temperature in the range of about 1100° C. to 1450° C. in high-purity nitrogen for a period of at least five minutes to several hours. 17 ) The method of claim 14 , wherein the multiphase joining interlayer is a hypereutectic Al-80 wt % Si alloy. 18 ) The method of claim 14 , wherein the multiphase joining interlayer includes three distinct layers, wherein the first and third layers are multiphase alloys, and wherein the second layer is a metal sandwiched between the first and third layers, 19 ) The method of claim 18 , wherein the first and third layers are Al-12 wt % Si alloy and the second layer is Al-70 wt % Si alloy. 20 ) The method of claim 18 , wherein the first and third layers are Al-80 wt % Si alloy and the second layer is a metal selected from the group consisting of titanium, zirconium, molybdenum, niobium, and combinations thereof.

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Classifications

  • whereby the interlayer is continuous, but heterogeneous on macro-scale, e.g. one part of the interlayer being a joining material, another part being an electrode material · CPC title

  • characterised by the heating method · CPC title

  • Silicon carbide · CPC title

  • consisting of metals or metal salts · CPC title

  • consisting of metals or metal salts · CPC title

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What does patent US2016284427A1 cover?
A method for fabricating assemblies includes providing first and second components that include ceramic, metal, or composite; positioning a multiphase joining interlayer between the first and second components, wherein the joining interlayer includes a first phase that melts at a first temperature and a second phase interspersed throughout the first phase, and wherein the second phase melts at …
Who is the assignee on this patent?
Herderick Edward D, Cooper Kirk E, Ames Nathan D, and 1 more
What technology area does this patent fall under?
Primary CPC classification G21C3/07. Mapped technology areas include Physics.
When was this patent published?
Publication date Thu Sep 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).