Spin electronic memory, information recording method and information reproducing method

Patent metadata

Field	Value
Publication number	US-2016284394-A1
Application number	US-201415036666-A
Country	US
Kind code	A1
Filing date	Sep 19, 2014
Priority date	Nov 15, 2013
Publication date	Sep 29, 2016
Grant date	—

Abstract

A spin electronic memory of the present invention includes: a pair of electrodes 1, 2 , recording layers 6 a, 6 b , and 6 c between the electrodes 1 and 2 , the recording layer being formed by laminating first alloy layer 5 and second alloy layer 4 , the first alloy layer 5 being formed to contain any one of SbTe, Sb 2 Te 3 , BiTe, Bi 2 Te 3 , BiSe, and Bi 2 Se 3 as a principal component and to have a thickness of 2 nm to 10 nm, the second alloy layer 4 being formed to contain an alloy expressed by general formula (1) as a principal component; and spin injection layer 7 formed with a magnetic material to inject a spin into the recording layer with the magnetic material being magnetized,
M 1-x Te x   (1)
where M represents an atom selected from atoms of Ge, Al, and Si, and x represents a value of 0.5 or more and less than 1.

First claim

1 . A spin electronic memory comprising:
a pair of electrodes; a recording layer disposed between the electrodes, the recording layer being formed by laminating a first alloy layer and a second alloy layer, the first alloy layer being formed to contain any one of SbTe, Sb 2 Te 3 , BiTe, Bi 2 Te 3 , BiSe, and Bi 2 Se 3 as a principal component and to have a thickness of 2 nm to 10 nm, the second alloy layer being formed to contain an alloy expressed by a following general formula (1) as a principal component; and a spin injection layer formed with a magnetic material and configured to inject a spin into the recording layer with the magnetic material being magnetized,
M 1-x Te x   (1)

where M represents an atom selected from atoms of Ge, Al, and Si, and x represents a value of 0.5 or more and less than 1.

2 . The spin electronic memory according to claim 1 , wherein at least two or more of the recording layer are laminated and disposed.

3 . The spin electronic memory according to claim 1 , wherein the first alloy layer has a hexagonal crystal structure, and the second alloy layer has a cubic crystal structure, and a c-axis of the first alloy layer is oriented in a laminating direction, and a (111) plane of the second alloy layer is oriented along an adjacent surface adjacent to the first alloy layer.

4 . The spin electronic memory according to claim 1 , wherein the second alloy layer is formed to contain GeTe as a principal component.

5 . The spin electronic memory according to claim 1 , wherein the second alloy layer has a thickness of more than 0 and 4 nm or less.

6 . The spin electronic memory according to claim 1 , further comprising
an orientation layer disposed as a base of the second alloy layer to orient a lamination plane of the second alloy layer laminated thereon along a (111) plane.

7 . The spin electronic memory according to claim 6 , wherein the orientation layer has a composition and a crystal structure identical to those of the first alloy layer.

8 . The spin electronic memory according to claim 1 , further comprising
a magnetic section configured to form a magnetic field in a direction perpendicular to a plane of the spin injection layer to inject a spin into the recording layer through the spin injection layer.

9 . A method for recording information using a spin electronic memory, the method comprising
applying voltage having voltage values staged into n stages to n recording layers laminated, the voltage values being necessary for accumulating a spin in a saturated state in each of the recording layers, where n is an integer of at least 1 or more, wherein the spin electronic memory comprises:
a pair of electrodes;
a recording layer disposed between the electrodes, the recording layer being formed by laminating a first alloy layer and a second alloy layer, the first alloy layer being formed to contain an one of SbTe, Sb 2 Te 3 , BiTe, Bi 2 Te 3 , BiSe, and Bi 2 Se 3 as a principal component and to have a thickness of 2 nm to 10 nm, the second alloy layer being formed to contain an alloy expressed by a following general formula (1) as a principal component; and
a spin injection layer formed with a magnetic material and configured to inject a spin into the recording layer with the magnetic material being magnetized,
M 1-x Te x   (1)

where M represents an atom selected from atoms of Ge, Al, and Si, and x represents a value of 0.5 or more and less than 1.

10 . A method for reproducing information using a spin electronic memory, the method comprising
measuring a status value of one of a resistance value and an optical reflectance of n recording layers laminated, and determining, based on the status value, number of the recording layers having information recorded thereon in the recording layers laminated, where n is an integer of at least 1 or more. wherein the spin electronic memory comprises:
a pair of electrodes;
a recording layer disposed between the electrodes, the recording layer being formed by laminating a first alloy layer and a second alloy layer, the first alloy layer being formed to contain an one of SbTe, Sb 2 Te 3 , BiTe, Bi 2 Te 3 , BiSe, and Bi 2 Se 3 as a principal component and to have a thickness of 2 nm to 10 nm, the second alloy layer being formed to contain an alloy expressed by a following general formula (1) as a principal component; and
a spin injection layer formed with a magnetic material and configured to inject a spin into the recording layer with the magnetic material being magnetized,
M 1-x Te x   (1)

where M represents an atom selected from atoms of Ge, Al, and Si, and x represents a value of 0.5 or more and less than 1.

Assignees

• Nat Inst Advanced Ind Science & Tech

Inventors

• Tominaga Junji

Classifications

• H01L43/02

  Electricity · mapped topic

• G11C11/1673

  Reading or sensing circuits or methods · CPC title

• G11C13/04

  using optical elements {; using other beam accessed elements, e.g. electron or ion beam} · CPC title

• G11C11/1675

  Writing or programming circuits or methods · CPC title

• G06F3/0625

  Power saving in storage systems · CPC title