Superalloy target
US-11866805-B2 · Jan 9, 2024 · US
Cylindrical sputtering target, cylindrical compact, manufacturing method of cylindrical sputtering target, and manufacturing method of cylindrical sintered compact
US2016281214A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016281214-A1 |
| Application number | US-201615082035-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 28, 2016 |
| Priority date | Mar 27, 2015 |
| Publication date | Sep 29, 2016 |
| Grant date | — |
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- Title
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Abstract
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A cylindrical sputtering target includes a plurality of cylindrical sintered compacts adjacent to each other while having a space therebetween. The plurality of cylindrical sintered compacts have a relative density of 99.7% or higher and 99.9% or lower. The plurality of cylindrical sintered compacts adjacent to each other have a difference therebetween in the relative density of 0.1% or smaller.
First claim
Opening claim text (preview).
What is claimed is: 1 . A cylindrical sputtering target, comprising: a plurality of cylindrical sintered compacts adjacent to each other while having a space therebetween, the plurality of cylindrical sintered compacts containing ITO or IGZO and having a relative density of 99.7% or higher and 99.9% or lower, and the plurality of cylindrical sintered compacts adjacent to each other having a difference therebetween in the relative density of 0.1% or smaller. 2 . A manufacturing method of a cylindrical sputtering target, comprising: sintering a plurality of cylindrical compacts having a relative density of 54.5% or higher and 58.0% or lower and containing ITO or IGZO to form a plurality of cylindrical sintered compacts having a relative density of 99.7% or higher and 99.9% or lower; and locating the plurality of cylindrical sintered compacts to be adjacent to each other having a difference therebetween in the relative density of 0.1% or smaller. 3 . The manufacturing method of a cylindrical sputtering target according to claim 2 , further comprising performing cold isostatic pressing at a pressure of 100 MPa or higher and 200 MPa or lower to form the plurality of cylindrical compacts. 4 . A manufacturing method of a cylindrical sintered compact, comprising: sintering a cylindrical compact having a relative density of 54.5% or higher and 58.0% or lower and containing ITO or IGZO, the cylindrical sintered compact having a relative density of 99.7% or higher and 99.9% or lower. 5 . The manufacturing method of a cylindrical sintered compact according to claim 4 , further comprising performing cold isostatic pressing at a pressure of 100 MPa or higher and 200 MPa or lower to form the cylindrical compact. 6 . A cylindrical compact usable to form a cylindrical sintered compact usable to manufacture a cylindrical sputtering target, the cylindrical compact having a relative density of 54.5% or higher and 58.0% or lower and containing ITO or IGZO.
Assignees
Inventors
Classifications
- C23C14/3414Primary
Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title
- C23C14/3407Primary
Cathode assembly for sputtering apparatus, e.g. Target · CPC title
of zinc, germanium, cadmium, indium, tin, thallium or bismuth · CPC title
Oxides (C23C14/10 takes precedence) · CPC title
Material · CPC title
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- What does patent US2016281214A1 cover?
- A cylindrical sputtering target includes a plurality of cylindrical sintered compacts adjacent to each other while having a space therebetween. The plurality of cylindrical sintered compacts have a relative density of 99.7% or higher and 99.9% or lower. The plurality of cylindrical sintered compacts adjacent to each other have a difference therebetween in the relative density of 0.1% or smaller.
- Who is the assignee on this patent?
- Jx Nippon Mining & Metals Corp
- What technology area does this patent fall under?
- Primary CPC classification C23C14/3414. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Sep 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).