Bottom electrode for magnetic memory to increase tmr and thermal budget

Patent metadata

Field	Value
Publication number	US-2016276580-A1
Application number	US-201615075222-A
Country	US
Kind code	A1
Filing date	Mar 21, 2016
Priority date	Mar 20, 2015
Publication date	Sep 22, 2016
Grant date	—

Abstract

Magnetic tunnel junction (MTJ) storage unit of a memory cell and method of forming thereof are disclosed. The method includes forming a composite bottom electrode on a substrate. The substrate is prepared with a back end dielectric layer. The composite bottom electrode includes a first conductive electrode layer C 1 having a first thickness t BE 1 and a second conductive electrode layer C 2 having a second thickness t BE 2. The first and second conductive electrode layers form a bilayer C 1/ C 2. The bilayer is provided to form the composite bottom electrode which enables thinner layers to form the composite bottom electrode. This results in reduced surface roughness to increase tunnel magnetoresistance (TMR) and thermal budget. The method further includes forming a MTJ element. The MTJ element includes a fixed layer and a free layer separated by a tunneling barrier layer. The method also includes forming a top electrode over the MTJ element.

First claim

What is claimed is:

1 . A method of forming a magnetic tunnel junction (MTJ) storage unit for a memory cell comprising:
forming a composite bottom electrode on a substrate prepared with a back end dielectric layer, wherein the composite bottom electrode comprises
a first conductive electrode layer C 1 having a first thickness t BE 1, and
a second conductive electrode layer C 2 having a second thickness t BE 2, wherein the first and second conductive electrode layers form a bilayer C 1 /C 2 , wherein providing the bilayer to form the composite bottom electrode enables thinner layers to form the composite bottom electrode which results in reduced surface roughness to increase tunnel magnetoresistance (TMR) and thermal budget;
forming a MTJ element, wherein the MTJ element comprises a fixed layer and a free layer separated by a tunneling barrier layer; and forming a top electrode over the MTJ element.

2 . The method of claim 1 wherein forming the composite bottom electrode comprises forming n bilayers comprising C 1 and C 2 to form a bottom electrode stack with [C 1 /C 2 ] n .

3 . The method of claim 2 where n is from 1 to n to produce a desired total thickness T DBE for the composite bottom electrode.

4 . The method of claim 2 wherein C 1 is selected from Ta, Ti, TaN, or TiN and C 2 is selected from Ta, Ti, TaN or TiN, wherein C 1 is not the same as C 2 .

5 . The method of claim 4 wherein the n bilayers comprise the same combination of bilayers.

6 . The method of claim 3 wherein forming the composite bottom electrode comprises forming a surface smoother on an interface of the composite bottom electrode, wherein the surface smoother smoothens the surface below to enhance surface smoothness of the bottom electrode.

7 . The method of claim 6 comprises forming the surface smoother at an interface between the bilayers.

8 . The method of claim 6 comprises forming the surface smoother on a top surface of the composite bottom electrode.

9 . The method of claim 6 wherein forming the surface smoother comprises forming a surfactant layer.

10 . The method of claim 9 wherein forming the surfactant layer comprises forming MgTa, MgMo or MgW surfactant layer.

11 . The method of claim 6 wherein forming the surface smoother comprises performing a plasma surface treatment on the surface below to smoothen the surface.

12 . The method of claim 11 wherein performing the plasma surface treatment comprises an Ar plasma etch.

13 . A magnetic tunnel junction (MTJ) storage unit of a memory cell comprising:
a composite bottom electrode disposed on a substrate prepared with a back end dielectric layer, wherein the composite bottom electrode comprises
a first conductive electrode layer C 1 having a first thickness t BE 1, and
a second conductive electrode layer C 2 having a second thickness t BE 2, wherein the first and second conductive electrode layers form a bilayer C 1 /C 2 , wherein the bilayer enables thinner layers to form the composite bottom electrode which results in reduced surface roughness to increase tunnel magnetoresistance (TMR) and thermal budget;
a MTJ element disposed on the composite bottom electrode, wherein the MTJ element comprises a fixed layer and a free layer separated by a tunneling barrier layer; and a top electrode disposed over the MTJ element.

14 . The MTJ storage unit of claim 13 wherein the composite bottom electrode comprises n bilayers comprising C 1 and C 2 to form a bottom electrode stack with [C 1 /C 2 ] n .

15 . The MTJ storage unit of claim 14 where n is from 1 to n to produce a desired total thickness T DBE for the composite bottom electrode.

16 . The MTJ storage unit of claim 14 wherein C 1 is selected from Ta, Ti, TaN, or TiN and C 2 is selected from Ta, Ti, TaN or TiN, wherein C 1 is not the same as C 2 .

17 . The MTJ storage unit of claim 16 wherein the n bilayers comprise the same combination of bilayers.

18 . The MTJ storage unit of claim 13 wherein the composite bottom electrode further comprises a surface smoother disposed on an interface of the composite bottom electrode, wherein the surface smoother smoothens the surface below to enhance surface smoothness of the bottom electrode.

19 . The MTJ storage unit of claim 18 wherein the surface smoother is disposed at an interface between the bilayers.

20 . The MTJ storage unit of claim 18 wherein the surface smoother is disposed on a top surface of the composite bottom electrode.

Assignees

• Globalfoundries Sg Pte Ltd

Inventors

• Tahmasebi Taiebeh
• Gan Kah Wee
• Seet Chim Seng

Classifications

• H01L43/12

  Electricity · mapped topic

• H01L43/02

  Electricity · mapped topic

• H01L43/10 Primary

  Electricity · mapped topic

• H01L27/222

  Electricity · mapped topic

• H10B61/22

  of the field-effect transistor [FET] type · CPC title