Stt-mram design enhanced by switching current induced magnetic field

Patent metadata

Field	Value
Publication number	US-2016276576-A1
Application number	US-201615170851-A
Country	US
Kind code	A1
Filing date	Jun 1, 2016
Priority date	Feb 19, 2013
Publication date	Sep 22, 2016
Grant date	—

Abstract

A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.

First claim

What is claimed is:

1 . A method of constructing a magnetic memory cell comprising:
patterning a first electrode; fabricating a magnetic tunnel junction (MTJ) comprising a plurality of MTJ layers on the first electrode so that the first electrode has a first elongated portion extending laterally away from the MTJ by a sufficient lateral displacement to cause an MTJ switching current to flow in a first plane parallel the plurality of MTJ layers in the first electrode and; patterning a second electrode on the MTJ so that the second electrode has a second elongated portion extending laterally away from the MTJ by a sufficient lateral displacement to cause the MTJ switching current to flow in a second plane parallel the plurality of MTJ layers in the first electrode; and controlling a switching current induced magnetic field by configuring the first elongated portion and the second elongated portion to direct mutually additive portions of the switching current induced magnetic field through the MTJ.

2 . The method of claim 1 , further comprising:
depositing a first conductive layer coupled to the first electrode; and depositing a second conductive layer coupled to the second electrode.

3 . The method of claim 2 , further comprising:
coupling a first via between the first conductive layer and the first electrode; and coupling a second via between the second conductive layer and the second electrode.

4 . The method of claim 1 , further comprising:
defining an easy axis with respect to the MTJ; and configuring the first elongated portion and the second elongated portion to induce the switching current induced magnetic field parallel to the easy axis of the MTJ.

5 . The method of claim 1 , further comprising:
defining an easy axis with respect to the MTJ; and configuring the first elongated portion and the second elongated portion to induce the switching current induced magnetic field perpendicular to the easy axis of the MTJ.

6 . The method of claim 1 , further comprising:
defining an easy axis with respect to the MTJ; and configuring the first elongated portion and the second elongated portion to induce the switching current induced magnetic field at an angle to the easy axis of the MTJ.

7 . The method of claim 1 , in which the first electrode and the second electrode have substantially a same pattern.

8 . The method of claim 1 , further comprising integrating the magnetic memory cell into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.

9 . A method of constructing a magnetic memory cell comprising:
the step for patterning a first electrode; the step for fabricating a magnetic tunnel junction (MTJ) comprising a plurality of MTJ layers on the first electrode so that the first electrode has a first elongated portion extending laterally away from the MTJ by a sufficient lateral displacement to cause a switching current to flow in a first plane parallel the plurality of MTJ layers in the first electrode and; the step for patterning a second electrode on the MTJ so that the second electrode has a second elongated portion extending laterally away from the MTJ by a sufficient lateral displacement to cause the switching current to flow in a second plane parallel the plurality of MTJ layers in the first second; and the step for controlling a switching current induced magnetic field by configuring the first elongated portion and the second elongated portion to direct mutually additive portions of a switching current induced magnetic field through the MTJ.

10 . The method of claim 9 , further comprising:
the step for depositing a first conductive layer coupled to the first electrode; and the step for depositing a second conductive layer coupled to the second electrode.

11 . The method of claim 10 , further comprising:
the step for coupling a first via between the first conductive layer and the first electrode; and the step for coupling a second via between the second conductive layer and the second electrode.

12 . The method of claim 9 , further comprising:
the step for defining an easy axis with respect to the MTJ; and the step for configuring the first elongated portion and the second elongated portion to induce the switching current induced magnetic field parallel to the easy axis of the MTJ.

13 . The method of claim 9 , further comprising:
the step for defining an easy axis with respect to the MTJ; and the step for configuring the first elongated portion and the second elongated portion to induce the switching current induced magnetic field perpendicular to the easy axis of the MTJ.

14 . The method of claim 9 , further comprising:
the step for defining an easy axis with respect to the MTJ; and the step for configuring the first elongated portion and the second elongated portion to induce the switching current induced magnetic field at an angle to the easy axis of the MTJ.

15 . The method of claim 9 , in which the first electrode and the second electrode have substantially a same pattern.

16 . The method of claim 9 , further comprising integrating the magnetic memory cell into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.

17 . A method of constructing a magnetic memory cell comprising:
depositing a first conductive layer; arranging a first contact via on the first conductive layer; fabricating a first electrode on the first contact via; fabricating an MTJ on the first electrode, in which the first electrode includes a first elongated portion extending away from the MTJ; fabricating a second electrode on the MTJ, in which the second electrode includes a second elongated portion extending away from the MTJ; arranging a second contact via on the second electrode; and depositing a conductive layer on the second contact via.

18 . The method of claim 17 , further comprising arranging a lateral displacement between the first elongated portion and the second elongated portion relative to the MTJ to direct mutually additive portions of a switching current induced magnetic field through the MTJ.

19 . The method of claim 17 , further comprising:
aligning the second contact via with the first contact via and a portion of MTJ disposed directly between the first contact via and the second contact via to direct a first portion of a magnetic field induced by the MTJ from the first contact via through the MTJ; and arranging a lateral displacement between the second elongated portion and the MTJ to direct a second portion of the magnetic field induced by the MTJ and the second contact via, the second portion of the magnetic field adding with the first portion of the magnetic field to enhance the magnetic field through the MTJ.

20 . The method of claim 17 , further comprising integrating the magnetic memory cell into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.

Assignees

• Qualcomm Inc

Inventors

• Xia William H
• Wu Wenqing
• Yuen Kendrick H
• Banerjee Abhishek
• Li Xia
• Kang Seung H
• Kim Jung Pill

Classifications

• H01L43/12

  Electricity · mapped topic

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01L43/08

  Electricity · mapped topic

• H01L43/02 Primary

  Electricity · mapped topic

• G11C11/1693

  Timing circuits or methods · CPC title