Cover glass for light emitting diode package, sealed structure, and light emitting device

Patent metadata

Field	Value
Publication number	US-2016276544-A1
Application number	US-201615171051-A
Country	US
Kind code	A1
Filing date	Jun 2, 2016
Priority date	Dec 11, 2013
Publication date	Sep 22, 2016
Grant date	—

Abstract

To provide a cover glass for light emitting diode package, which is capable of preventing deterioration in transmittance characteristics during use for a long period of time, and a light emitting device. The cover glass for light emitting diode package has a basic composition comprising, by mass % as calculated as oxides, from 55 to 80% of SiO 2 , from 0.5 to 15% of Al 2 O 3 , from 5 to 25% of B 2 O 3 , from 0 to 7% of Li 2 O, from 0 to 15% of Na 2 O, from 0 to 10% of K 2 O (provided Li 2 O+Na 2 O+K 2 O=from 2 to 20%), from 0 to 0.1% of SnO 2 and from 0.001 to 0.1% of Fe 2 O 3 , it does not substantially contain As 2 O 3 , Sb 2 O 3 and PbO, and it has an average thermal expansion coefficient of from 45 to 70×10 −7 /° C. in a temperature range of from 0 to 300° C.

First claim

What is claimed is:

1 . A cover glass for light emitting diode package, characterized in that it has a basic composition comprising, by mass % as calculated as oxides, from 55 to 80% of SiO 2 , from 0.5 to 15% of Al 2 O 3 , from 5 to 25% of B 2 O 3 , from 0 to 7% of Li 2 O, from 0 to 15% of Na 2 O, from 0 to 10% of K 2 O (provided Li 2 O+Na 2 O+K 2 O=from 2 to 20%), from 0 to 0.1% of SnO 2 and from 0.001 to 0.1% of Fe 2 O 3 , it does not substantially contain As 2 O 3 , Sb 2 O 3 and PbO, and it has an average thermal expansion coefficient of from 45 to 70×10 −7 /° C. in a temperature range of from 0 to 300° C.

2 . The cover glass for light emitting diode package according to claim 1 ,
characterized in that it has a basic composition comprising, by mass % as calculated as oxides, from 55 to 80% of SiO 2 , from 0.5 to 15% of Al 2 O 3 , from 5 to 25% of B 2 O 3 , from 0 to 7% of Li 2 O, from 0 to 15% of Na 2 O, from 0 to 10% of K 2 O (provided Li 2 O+Na 2 O+K 2 O=from 2 to 20%), from 0 to 0.1% of SnO 2 and from 0.003 to 0.1% of Fe 2 O 3 , it does not substantially contain As 2 O 3 , Sb 2 O 3 and PbO, and it has an average thermal expansion coefficient of from 45 to 70×10 −7 /° C. in a temperature range of from 0 to 300° C.

3 . The cover glass for light emitting diode package according to claim 1 , characterized in that the transmittance at a wavelength of 365 nm in a thickness of 1 mm is at least 85%.

4 . The cover glass for light emitting diode package according to claim 1 , characterized in that the average transmittance at a wavelength of from 808 to 1,064 nm in a thickness of 1 mm is at least 85%.

5 . The cover glass for light emitting diode package according to claim 1 , characterized in that the refractive index (nd) is at most 1.52.

6 . A sealed structure having a cover glass and a light emitting diode package bonded to each other, characterized in that a light emitting diode package and the cover glass for light emitting package as defined in claim 1 are bonded.

7 . A sealed structure having a cover glass and a light emitting diode package bonded to each other, characterized in that the light emitting diode package is made of a glass ceramic substrate obtained by firing a glass ceramic composition containing a glass powder and a ceramic filler, and such a glass ceramic substrate and the cover glass for light emitting package as defined in claim 1 are bonded.

8 . The sealed structure having a cover glass and a light emitting diode package bonded to each other, according to claim 6 , characterized in that the cover glass is bonded to the light emitting diode package via a low melting point glass which is melted by laser irradiation

9 . A light emitting device characterized by comprising a cover glass for light emitting diode package as defined in claim 1 , a light emitting diode package having a light emitting diode mounted thereon, and a sealing material containing a low melting point glass which is melted by laser irradiation to bond the cover glass for light emitting diode package and the light emitting diode package.

10 . The light emitting device according to claim 9 , wherein the sealing material comprises the low melting point glass and an inorganic filler.

11 . The light emitting device according to claim 10 , wherein the inorganic filler is at least one member selected from a low-expansion filler and an electromagnetic wave absorbing material.

12 . The light emitting device according to claim 9 , wherein the difference in average thermal expansion coefficient in a temperature range of from 25 to 300° C. between the light emitting diode package and the cover glass for light emitting diode package is at most 20×10 −7 /° C.

13 . The light emitting device according to claim 9 , wherein the light emitting diode package is made of a glass ceramic substrate obtained by firing a glass ceramic composition containing a glass powder and a ceramic filler, and between the average thermal expansion coefficient in a temperature range of from 25 to 300° C. of the glass ceramic substrate and the average thermal expansion coefficient in a temperature range of from 25 to 300° C. of the cover glass for light emitting diode package, there is a relation of “the average thermal expansion coefficient of the glass ceramic substrate”≧“the average thermal expansion coefficient of the cover glass for light emitting diode package”.

Assignees

• Asahi Glass Co Ltd

Inventors

• Shiratori Makoto
• Mitsui Yoko
• Takeda Satoshi

Classifications

• H10H20/8515

  not being in contact with the bodies · CPC title

• H10H20/854

  characterised by their material, e.g. epoxy or silicone resins · CPC title

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title

• H10H20/036

  of packages · CPC title

• H10H20/8506 Primary

  Containers · CPC title