Semiconductor device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-2016276489-A1
Application number	US-201615168291-A
Country	US
Kind code	A1
Filing date	May 31, 2016
Priority date	Apr 16, 2012
Publication date	Sep 22, 2016
Grant date	—

Abstract

An object is to suppress conducting-mode failures of a transistor that uses an oxide semiconductor film and has a short channel length. A semiconductor device includes a gate electrode 304, a gate insulating film 306 formed over the gate electrode, an oxide semiconductor film 308 over the gate insulating film, and a source electrode 310 a and a drain electrode 310 b formed over the oxide semiconductor film. The channel length L of the oxide semiconductor film is more than or equal to 1 μm and less than or equal to 50 μm. The oxide semiconductor film has a peak at a rotation angle 2θ in the vicinity of 31° in X-ray diffraction measurement.

First claim

1 . A semiconductor device comprising:
an oxide semiconductor layer, wherein a length of a channel formed in the oxide semiconductor layer is more than or equal to 1 μm and less than or equal to 50 μm, and wherein a diffraction intensity of the oxide semiconductor layer in X-ray diffraction measurement has a peak at a rotation angle 2θ of more than or equal to 30° and less than or equal to 32°.

2 . The semiconductor device according to claim 1 further comprising:
a gate electrode;
a gate insulating layer over the gate electrode; and
a source electrode and a drain electrode over the oxide semiconductor layer,
wherein the oxide semiconductor layer is over the gate insulating layer.

3 . The semiconductor device according to claim 1 , wherein the length of the channel is less than 5 μm.

4 . The semiconductor device according to claim 1 , wherein a band gap of the oxide semiconductor layer is more than or equal to 3.1 eV.

5 . The semiconductor device according to claim 1 , wherein the oxide semiconductor layer includes at least one oxide selected from the group consisting of indium oxide, zinc oxide, gallium oxide, tin oxide and a combination thereof.

6 . The semiconductor device according to claim 1 , wherein the oxide semiconductor layer is an In—Ga—Zn-based oxide semiconductor layer.

7 . The semiconductor device according to claim 1 ,
wherein the oxide semiconductor layer includes a crystal part, and wherein a c-axis of the crystal part is aligned in a direction substantially parallel to a normal vector of a surface on which the oxide semiconductor layer is formed.

8 . A semiconductor device comprising:
an oxide semiconductor layer, wherein a length of a channel formed in the oxide semiconductor layer is more than or equal to 1 μm and less than or equal to 50 μm, wherein the oxide semiconductor layer includes a crystal part, and wherein a c-axis of the crystal part is aligned in a direction substantially parallel to a normal vector of a surface on which the oxide semiconductor layer is formed.

9 . The semiconductor device according to claim 8 further comprising:
a gate electrode;
a gate insulating layer over the gate electrode; and
a source electrode and a drain electrode over the oxide semiconductor layer,
wherein the oxide semiconductor layer is over the gate insulating layer.

10 . The semiconductor device according to claim 8 , wherein the length of the channel is less than 5 μm.

11 . The semiconductor device according to claim 8 , wherein the oxide semiconductor layer is an In—Ga—Zn-based oxide semiconductor layer.

12 . The semiconductor device according to claim 1 further comprising:
a substrate; and
a base insulating film between the substrate and the oxide semiconductor layer.

13 . The semiconductor device according to claim 12 , wherein the base insulating film is one of a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film and an aluminum oxide film.

14 . The semiconductor device according to claim 13 ,
wherein the base insulating film is the aluminum oxide film, and wherein a density of the aluminum oxide film is 3.2 g/cm 3 or more.

15 . The semiconductor device according to claim 13 ,
wherein the base insulating film is the aluminum oxide film, and wherein an amount of water (H 2 O) released from the aluminum oxide film is less than or equal to 5×10 15 atoms/cm 3 .

16 . The semiconductor device according to claim 13 ,
wherein the base insulating film is the aluminum oxide film, and wherein an amount of hydrogen (H 2 ) released from the aluminum oxide film is less than or equal to 5×10 15 atoms/cm 3 .

Assignees

• Okazaki Kenichi
• Yokoyama Masatoshi
• Sakakura Masayuki
• Shima Yukinori
• Kanzaki Yosuke
• Matsukizono Hiroshi
• Matsuo Takuya
• Yamamoto Yoshitaka
• Semiconductor Energy Lab
• Sharp Kk

Inventors

• Okazaki Kenichi
• Yokoyama Masatoshi
• Sakakura Masayuki
• Shima Yukinori
• Kanzaki Yosuke
• Matsukizono Hiroshi
• Matsuo Takuya
• Yamamoto Yoshitaka

Classifications

• H10P14/6938

  the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides · CPC title

• H10D99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H10D30/6704

  having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device · CPC title

• H10D30/031

  of thin-film transistors [TFT] · CPC title