Semiconductor package and semiconductor device including electromagnetic wave shield layer

Patent metadata

Field	Value
Publication number	US-2016276288-A1
Application number	US-201514960443-A
Country	US
Kind code	A1
Filing date	Dec 7, 2015
Priority date	Mar 16, 2015
Publication date	Sep 22, 2016
Grant date	—

Abstract

A semiconductor package is provided with an electromagnetic wave shielding layer, and a conductive ground layer connected thereto. For example, in certain embodiments, the conductive ground layer is formed in a package substrate of the semiconductor package. The conductive ground layer may include a planar, or base portion, and a protruding, or lip portion. The planar or base portion as well as the protruding or lip portion may contact the electromagnetic wave shielding layer surrounding the semiconductor package.

First claim

What is claimed is:

1 . A semiconductor package comprising:
a package substrate including a core formed of an electrically insulating material and an electrically conductive ground layer formed within the core; a plurality of external terminals positioned to electrically connect circuitry in the package substrate to an external device external to the semiconductor package; and one or more semiconductor chips stacked on and electrically connected to the package substrate; a mold member disposed on the package substrate and surrounding the one or more semiconductor chips; and an electromagnetic wave shield layer formed on side surfaces and on a top surface of the mold member and formed on side surfaces of the package substrate, wherein the conductive ground layer is electrically connected to at least a first terminal of the plurality of external terminals, the first terminal electrically connected to circuitry of the one or more semiconductor chips designated for connecting to a ground, and wherein the conductive ground layer has a plate shape, including a base portion and a lip portion formed of the same material, the lip portion extending above and/or below the base portion, and wherein a side of the base portion of the conductive ground layer and a side of the lip portion of the conductive ground layer form part of a side surface of the package substrate, and contact the electromagnetic wave shield layer.

2 . The semiconductor package of claim 1 , wherein:
the electromagnetic wave shield layer entirely surrounds side surfaces and a top surface of the semiconductor package.

3 . The semiconductor package of claim 2 , wherein the one or more semiconductor chips are completely enclosed by a combination of the electromagnetic wave shield layer and the conductive ground layer.

4 . The semiconductor package of claim 1 , wherein the lip portion of the conductive ground layer extends in a direction perpendicular to the base portion of the conductive ground layer.

5 . The semiconductor package of claim 1 , wherein the core of the package substrate includes a first core portion located on an upper surface of the ground layer and a second core portion located on a lower surface of the ground layer.

6 . The semiconductor package of claim 1 , wherein the lip portion of the conductive ground layer extends along an outer periphery of the conductive ground layer.

7 . The semiconductor package of claim 6 , wherein the lip portion extends along the outer periphery of the ground layer both above and below the base portion of the conductive ground layer.

8 . The semiconductor package of claim 1 , wherein:
the lip portion extends discontinuously along the outer periphery of the conductive ground layer.

9 . The semiconductor package of claim 1 , further comprising:
at least a first vertical conductive line electrically connected to a first external terminal of the plurality of external terminals, and electrically connected to the conductive ground layer.

10 . The semiconductor package of claim 1 , wherein:
the plurality of external terminals are below the conductive ground layer and the one or more semiconductor chips are above the conductive ground layer.

11 . The semiconductor package of claim 1 , wherein:
an electromagnetic wave shield layer comprises a first electromagnetic wave shield layer contacting the side surface of the package substrate, and a second electromagnetic wave shield layer surrounding the first electromagnetic wave shield layer.

12 . A semiconductor package comprising:
a package substrate including a first body portion and a second body portion, each formed of an electrically insulating material, and a first ground layer formed of an electrically conductive material and formed between the first body portion and the second body portion; a plurality of external terminals disposed below the first ground layer to electrically connect circuitry in the package substrate to an external device external to the semiconductor package; one or more semiconductor chips disposed above the first ground layer and on the package substrate, and electrically connected to the package substrate; and a mold member disposed on the package substrate and surrounding the one or more semiconductor chips; and an electromagnetic wave shield layer formed on side surfaces and on a top surface of the mold member and formed on side surfaces of the package substrate, wherein the first ground layer is electrically connected to at least a first terminal of the plurality of external terminals, the first terminal electrically connected to circuitry of the one or more semiconductor chips designated for connecting to a ground, wherein the first ground layer has a plate shape, including a planar portion and protruding portion protruding from the planar portion, the planar portion and protruding portion formed of the same material, wherein the protruding portion extends above and/or below the planar portion, and wherein the planar portion and the protruding portion of the first ground layer form part of a side surface of the package substrate and contact the electromagnetic wave shield layer.

13 . The semiconductor package of claim 12 , wherein:
the first body portion and second body portion of the package substrate form a core of the package substrate, such that the first ground layer is formed within the core.

14 . The semiconductor package of claim 12 , wherein the protruding portion of the first ground layer extends in a direction perpendicular to the planar portion of the first ground layer.

15 . The semiconductor package of claim 12 , wherein the protruding portion extends along an outer periphery of the first ground layer.

16 . The semiconductor package of claim 15 , wherein the protruding portion extends along the entire outer periphery of the first ground layer.

17 . The semiconductor package of claim 12 , further comprising:
a second ground layer formed on a lower surface of the second body portion and including a planar portion and a protruding portion protruding from the planar portion of the second ground layer, wherein the planar portion and the protruding portion of the second ground layer contact the electromagnetic wave shield layer.

18 . The semiconductor package of claim 12 , further comprising:
at least a first vertical conductive line electrically connected to a first external terminal of the plurality of external terminals, and electrically connected to the first ground layer.

19 . A semiconductor device comprising:
a package substrate including a core portion formed of an electrically insulating material, and an electrically conductive ground layer formed in the core portion; a plurality of external terminals disposed below the conductive ground layer to electrically connect circuitry in the package substrate to an external device external to the semiconductor package; one or more semiconductor chips disposed above the conductive ground layer, and electrically connected to the package substrate; a mold member disposed on the package substrate and surrounding the one or more semiconductor chips; and an electromagnetic wave shield layer formed on side surfaces and on a top surface of the semiconductor package, and contacting the planar portion and protruding portion of the conductive ground layer, wherein the conductive ground layer is electrically connected to at least a first terminal of the plurality of external terminals, the first terminal electrically connected to a ground,

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Baik-Woo
• Kim Young-Jae

Classifications

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W74/114

  by a substrate and the encapsulations · CPC title

• H10W72/5525

  comprising copper [Cu] · CPC title