Manufacturing method of wiring structure and wiring structure

Patent metadata

Field	Value
Publication number	US-2016276281-A1
Application number	US-201514661585-A
Country	US
Kind code	A1
Filing date	Mar 18, 2015
Priority date	Mar 18, 2015
Publication date	Sep 22, 2016
Grant date	—

Abstract

A trench is formed in an insulating film, carbon is formed on the insulating film to fill an inside of the trench, a catalytic material is formed on the carbon, heat treatment is performed on the carbon to turn the carbon into graphenes which are stacked in a plurality of layers, and the catalytic material and a part of the graphenes on the insulating film are removed to make the graphenes remain only in the trench.

First claim

What is claimed is:

1 . A manufacturing method of a wiring structure, comprising:
forming a trench in an insulating film; forming carbon on the insulating film to fill an inside of the trench; forming a catalytic material on the carbon; performing heat treatment on the carbon to turn the carbon into graphenes which are stacked in a plurality of layers; and removing the catalytic material and a part of the graphenes on the insulating film, to make the graphenes remain only in the trench.

2 . The manufacturing method of the wiring structure according to claim 1 , wherein
the inside of the trench of the insulating film is directly filled with the graphenes.

3 . The manufacturing method of the wiring structure according to claim 1 , wherein
the trench is a connection hole or a wiring trench.

4 . The manufacturing method of the wiring structure according to claim 1 , wherein
the trench is made of a connection hole and a wiring trench which are integrally formed.

5 . The manufacturing method of the wiring structure according to claim 1 , wherein
the graphenes are subjected to intercalation or doping using molecules of a different kind.

6 . The manufacturing method of the wiring structure according to claim 1 , wherein
the catalytic material is formed to have a thickness in a range from a thickness equivalent to a thickness of the carbon to a thickness which is twice the thickness of the carbon.

7 . A wiring structure, comprising:
an insulating film in which a trench is formed; and a conductive material which fills an inside of the trench, wherein the conductive material is made of stacked plural layers of graphenes formed in a direction along a bottom surface of the trench.

8 . The wiring structure according to claim 7 , wherein
the inside of the trench of the insulating film is directly filled with the graphenes.

9 . The wiring structure according to claim 7 , wherein
the trench is a connection hole or a wiring trench.

10 . The wiring structure according to claim 7 , wherein
the trench is made of a connection hole and a wiring trench which are integrally formed.

11 . The wiring structure according to claim 7 , wherein
the graphenes are subjected to intercalation or doping using molecules of a different kind.

Assignees

• Fujitsu Ltd

Inventors

• Sato Motonobu

Classifications

• H10W20/0554

  of nanotubes or nanowires · CPC title

• H10W20/086

  involving buried masks · CPC title

• H10W20/081

  by forming openings in the dielectric parts · CPC title

• H10W20/064

  by modifying the conductivity of conductive parts, e.g. by alloying · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title