Bonded body and power module substrate

Patent metadata

Field	Value
Publication number	US-2016276244-A1
Application number	US-201414913648-A
Country	US
Kind code	A1
Filing date	Aug 18, 2014
Priority date	Aug 26, 2013
Publication date	Sep 22, 2016
Grant date	—

Abstract

The bonded body of the present invention includes: a ceramic member made of ceramics; and a Cu member which is made of Cu or a Cu alloy and bonded to the ceramic member through a Cu—P—Sn-based brazing filler material and a Ti material, wherein a Cu—Sn layer, which is positioned close to the ceramic member and in which Sn forms a solid solution with Cu, and an intermetallic compound layer which is positioned between the Cu member and the Cu—Sn layer and contains P and Ti, are formed at a bonded interface between the ceramic member and the Cu member.

First claim

1 . A bonded body comprising:
a ceramic member made of ceramics; and a Cu member which is made of Cu or a Cu alloy and bonded to the ceramic member through a Cu—P—Sn-based brazing filler material and a Ti material, wherein a Cu—Sn layer, which is positioned close to the ceramic member and in which Sn forms a solid solution with Cu, and an intermetallic compound layer which is positioned between the Cu member and the Cu—Sn layer and contains P and Ti, are formed at a bonded interface between the ceramic member and the Cu member.

2 . The bonded body according to claim 1 ,
wherein the intermetallic compound layer is formed in a range of 0.1 μm to 100 μm from the interface between the ceramic member and the Cu—Sn layer.

3 . A power module substrate comprising the bonded body according to claim 1 , wherein the substrate further comprises:
a ceramic substrate formed of the ceramic member; and a circuit layer formed by bonding a Cu foil formed of the Cu member to a first surface of the ceramic substrate through the Cu—P—Sn-based brazing filler material and the Ti material, and wherein the Cu—Sn layer, which is positioned close to the ceramic substrate and in which Sn forms a solid solution with Cu, and the intermetallic compound layer which is positioned between the circuit layer and the Cu—Sn layer and contains P and Ti, are formed at a bonded interface between the ceramic substrate and the circuit layer.

4 . The power module substrate according to claim 3 ,
wherein a metal layer is formed on a second surface of the ceramic substrate.

5 . The power module substrate according to claim 4 ,
wherein the metal layer is formed by bonding a Cu foil made of Cu or a Cu alloy to the second surface of the ceramic substrate through a Cu—P—Sn-based brazing filler material and a Ti material, and wherein a Cu—Sn layer, which is positioned close to the ceramic substrate and in which Sn forms a solid solution with Cu, and an intermetallic compound layer which is positioned between the metal layer and the Cu—Sn layer and contains P and Ti, are formed at a bonded interface between the ceramic substrate and the metal layer.

6 . The power module substrate according to claim 4 ,
wherein the metal layer is made of Al or an Al alloy.

7 . A power module substrate comprising the bonded body according to claim 2 , wherein the substrate further comprises:
a ceramic substrate formed of the ceramic member; and a circuit layer formed by bonding a Cu foil formed of the Cu member to a first surface of the ceramic substrate through the Cu—P—Sn-based brazing filler material and the Ti material, and wherein the Cu—Sn layer, which is positioned close to the ceramic substrate and in which Sn forms a solid solution with Cu, and the intermetallic compound layer which is positioned between the circuit layer and the Cu—Sn layer and contains P and Ti, are formed at a bonded interface between the ceramic substrate and the circuit layer.

8 . The power module substrate according to claim 7 ,
wherein a metal layer is formed on a second surface of the ceramic substrate.

9 . The power module substrate according to claim 8 ,
wherein the metal layer is formed by bonding a Cu foil made of Cu or a Cu alloy to the second surface of the ceramic substrate through a Cu—P—Sn-based brazing filler material and a Ti material, and wherein a Cu—Sn layer, which is positioned close to the ceramic substrate and in which Sn forms a solid solution with Cu, and an intermetallic compound layer which is positioned between the metal layer and the Cu—Sn layer and contains P and Ti, are formed at a bonded interface between the ceramic substrate and the metal layer.

10 . The power module substrate according to claim 8 ,
wherein the metal layer is made of Al or an Al alloy.

Assignees

• Mitsubishi Materials Corp

Inventors

• Terasaki Nobuyuki
• Nagatomo Yoshiyuki

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W70/692

  Ceramics or glasses · CPC title

• H10W70/66

  Conductive materials thereof · CPC title

• H10W70/65

  Shapes or dispositions of interconnections · CPC title

• H10W70/05

  of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04) · CPC title