Flat gas discharge tube devices and methods

Patent metadata

Field	Value
Publication number	US-2016276146-A1
Application number	US-201615073537-A
Country	US
Kind code	A1
Filing date	Mar 17, 2016
Priority date	Mar 17, 2015
Publication date	Sep 22, 2016
Grant date	—

Abstract

Devices and methods related to flat discharge tubes. In some embodiments, a gas discharge tube (GDT) device can include a first insulator substrate having first and second sides and defining an opening. The GDT device can further include second and third insulator substrates mounted to the first and second sides of the first insulator substrate with first and second seals, respectively, such that inward facing surfaces of the second and third insulator substrates and the opening of the first insulator substrate define a chamber. The GDT device can further include first and second electrodes implemented on the respective inward facing surfaces of the second and third insulator substrates, and first and second terminals implemented on at least one external surface of the GDT device. The GDT device can further include electrical connections implemented between the first and second electrodes and the first and second terminals, respectively.

First claim

1 . A gas discharge tube (GDT) device comprising:
a first insulator substrate having first and second sides and defining an opening; second and third insulator substrates mounted to the first and second sides of the first insulator substrate, respectively, such that inward facing surfaces of the second and third insulator substrates and the opening of the first insulator substrate define a chamber; first and second electrodes implemented on one or more inward facing surfaces of the chamber; first and second terminals implemented on at least one external surface of the GDT device; and electrical connections implemented between the first and second electrodes and the first and second terminals, respectively.

2 . (canceled)

3 . The GDT device of claim 1 , wherein the first and second electrodes are implemented on the inward facing surfaces of the second and third insulator substrates, respectively.

4 . The GDT device of claim 1 , wherein the first insulator substrate includes a ceramic layer.

5 . The GDT device of claim 4 , wherein each of the second and third insulator substrates includes a ceramic layer.

6 . The GDT device of claim 1 , further comprising first and second seals configured to facilitate sealing of the chamber, the first seal implemented between the second insulator substrate and the first insulator substrate, the second seal implemented between the third insulator substrate and the first insulator substrate.

7 . The GDT device of claim 6 , wherein each of the first and second seals is an electrically conductive seal.

8 . The GDT device of claim 6 , wherein each of the first and second seals is an electrically non-conductive seal.

9 . The GDT device of claim 6 , wherein the first and second terminals are implemented at least on the second insulator substrate.

10 . The GDT device of claim 9 , wherein the first and second terminals are also implemented on the third insulator substrate and electrically connected to their respective first and second terminals on the second insulator substrate.

11 . The GDT device of claim 9 , wherein the electrical connections include a first internal via that extends through the second insulator substrate and configured to electrically connect the first electrode to the first terminal.

12 . The GDT device of claim 11 , wherein the electrical connections further include a second internal via that extends through the third insulator substrate and configured to electrically connect the second electrode to a conductor feature on an outward facing surface of the third insulator substrate.

13 . The GDT device of claim 12 , wherein the electrical connections further include a third internal via that extends through the third insulator substrate, the first insulator substrate, and the second insulator substrate, the third internal via configured to electrically connect the conductor feature on the outward facing surface of the third insulator substrate and the second terminal.

14 . The GDT device of claim 12 , wherein the electrical connections further include an external conductive feature implemented on a side edge of the GDT device and configured to electrically connect the conductor feature on the outward facing surface of the third insulator substrate and the second terminal.

15 . The GDT device of claim 14 , wherein the external conductive feature includes a castellation feature that is at least partially filled and/or plated with electrically conductive material.

16 . The GDT device of claim 9 , wherein the electrical connections include a first metalized trace that extends laterally from the first electrode to a first side edge of the GDT device, and a second metalized trace that extends laterally from the second electrode to a second side edge of the GDT device.

17 . The GDT device of claim 16 , wherein the first side edge and the second side edge are opposing edges.

18 . The GDT device of claim 16 , wherein the electrical connections further include a first external conductive feature implemented on the first side edge and configured to electrically connect the first metalized trace to the first terminal, and a second external conductive feature implemented on the second side edge and configured to electrically connect the second metalized trace to the second terminal.

19 . The GDT device of claim 18 , wherein each of the first and second external conductive features includes a castellation feature that is at least partially filled and/or plated with electrically conductive material.

20 - 35 . (canceled)

36 . A method for fabricating a gas discharge tube (GDT) device, the method comprising:
providing or forming a first insulator substrate having first and second sides and defining an opening; mounting second and third insulator substrates to the first and second sides of the first insulator substrate, respectively, such that inward facing surfaces of the second and third insulator substrates and the opening of the first insulator substrate define a chamber, each of the second and third insulator substrates including an electrode implemented on a surface facing the chamber; forming first and second terminals on at least one external surface of the second and third insulator substrates; and electrically connecting the first and second electrodes and the first and second terminals, respectively.

37 . A method for fabricating gas discharge tube (GDT) devices, the method comprising:
providing or forming a first insulator plate having first and second sides and an array of openings; providing or forming second and third insulator, each including an array of electrodes implemented on a surface, and a conductor feature electrically connected to each electrode; and mounting the second and third insulator plates to the first and second sides of the first insulator plate, respectively, such that the arrays of electrodes on the second and third insulator plates face each other through the array of openings to thereby define an array of chambers.

38 - 64 . (canceled)

Assignees

• Bourns Inc

Inventors

• Heath Jan
• Bourns Gordon L

Classifications

• H01T4/12

  hermetically sealed · CPC title

• H01J9/265

  specially adapted for gas-discharge tubes or lamps (H01J9/261 takes precedence) · CPC title

• H01T4/04

  Housings (H01T4/06 takes precedence) · CPC title

• H01J9/28

  Manufacture of leading-in conductors · CPC title

• H01J61/305 Primary

  Flat vessels or containers · CPC title