Film-forming composition and method for fabricating film by using the same

Patent metadata

Field	Value
Publication number	US-2016273103-A1
Application number	US-201514855697-A
Country	US
Kind code	A1
Filing date	Sep 16, 2015
Priority date	Mar 20, 2015
Publication date	Sep 22, 2016
Grant date	—

Abstract

A film-forming composition including a 3-intracyclic cyclopentadienyl precursor and dimethyethylamine is useful for Atomic Layer Deposition, and improves viscosity and volatility while maintaining unique features of metal precursors.

First claim

What is claimed is:

1 . A film-forming composition comprising:
a precursor and dimethyethylamine, wherein the precursor is represented by the following formula 1,

wherein M is selected from the group consisting of Zr, Hf, and Ti.

2 . The film-forming composition of claim 1 , wherein the dimethyethylamine is included in the composition in an amount of 1 to 99 wt % based on the total amount of the composition.

3 . The film-forming composition of claim 1 , wherein the precursor and the dimethyethylamine have a weight ratio of 1:99 to 99:1.

4 . A method for fabricating a film comprising:
depositing a film over a substrate by using a film-forming composition, wherein the film-forming composition comprises a precursor and dimethyethylamine, wherein the precursor is represented by the following formula 1,

wherein M is selected from the group consisting of Zr, Hf, and Ti.

5 . The method of claim 4 , wherein the film is deposited by Atomic Layer Deposition.

6 . The method of claim 5 , wherein the depositing of the film includes:
preparing a liquid-phase composition by dissolving the precursor in the dimethyethylamine, placing a substrate in a chamber, and introducing the liquid-phase composition into the chamber through Liquid Delivery System.

7 . The method of claim 6 , wherein the depositing of the film further includes vaporizing the liquid-phase composition, and
wherein the introducing of the liquid-phase composition includes introducing the vaporized liquid-phase composition into the chamber.

8 . The method of claim 4 , wherein the dimethyethylamine is included in an amount of 1 to 99 wt % based on the total amount of the film-forming composition.

9 . The method of claim 4 , wherein the precursor and the dimethyethylamine has a weight ratio of 1:99 to 99:1.

10 . A film-forming composition comprising:
a liquid-phase precursor including a metal precursor dissolved in dimethyethylamine, wherein the metal precursor comprises a propylamino group and a cyclopentadienyl group as functional groups.

11 . The film-forming composition of claim 10 , wherein the metal precursor has a structure of formula 1:

wherein M is selected from the group consisting of Zr, Hf, and Ti.

12 . The film-forming composition of claim 10 , wherein the dimethyethylamine is included in the composition in an amount of 1 to 99 wt % based on the total amount of the composition.

13 . The film-forming composition of claim 10 , wherein the metal precursor and the dimethyethylamine has a weight ratio of 1:99 to 99:1.

14 . A method for fabricating a film comprising:
preparing a liquid-phase metal precursor by dissolving a metal precursor in dimethyethylamine, wherein the metal precursor comprises a cyclopentadienyl group and propylamino group; vaporizing the liquid-phase metal precursor and introducing the vaporized metal precursor into a chamber with a substrate; adsorbing the vaporized metal precursor over the substrate; and feeding a reactant reactable with the adsorbed metal precursor to deposit a metal-containing film over the substrate.

15 . The method of claim 14 , wherein the metal precursor is represented by the following formula 1:

wherein M is selected from the group consisting of Zr, Hf, and Ti.

16 . The method of claim 14 , wherein the metal-containing film comprises a metal selected from the group consisting of Zr, Ti, Hf, an oxide of the metal, and a nitride of the metal.

17 . The method of claim 14 ,
wherein the depositing of the metal-containing film is performed by atomic layer deposition or chemical vapor deposition.

Assignees

• Sk Hynix Inc
• Soulbrain Sigma-Aldrich Ltd

Inventors

• Moon Ji-Won
• Son Young-Jin
• Lee Jeong-Yeop
• JANG Jun-Soo
• Jung Jae-Sun
• Lee Sang-Kyung
• Hong Chang-Sung
• Kim Hyun-Joon
• Shin Jin-Ho
• Kim Dae-Hyun

Classifications

• C23C16/18 Primary

  from metallo-organic compounds · CPC title

• C07F7/003

  without C-Metal linkages · CPC title

• C23C16/405

  of refractory metals or yttrium · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C07F7/28

  Titanium compounds · CPC title