Solid-state image capturing element, manufacturing method therefor, and electronic device

Patent metadata

Field	Value
Publication number	US-2016269668-A1
Application number	US-201415035300-A
Country	US
Kind code	A1
Filing date	Nov 17, 2014
Priority date	Nov 29, 2013
Publication date	Sep 15, 2016
Grant date	—

Abstract

The present disclosure relates to a solid-state image capturing element, a manufacturing method therefor, and an electronic device, which are capable of controlling a thickness of a depletion layer. The solid-state image capturing element includes pixels each in which a photoelectric conversion film configured to perform photoelectric conversion on incident light and a fixed charge film configured to have a predetermined fixed charge are stacked on a semiconductor substrate. The technology of the present disclosure can be applied to, for example, back surface irradiation type solid-state image capturing elements, image capturing devices such as digital still cameras or video cameras, mobile terminal devices having an image capturing function, and electronic devices using a solid-state image capturing element as an image capturing unit.

First claim

1 . A solid-state image capturing element, comprising:
pixels each including a photoelectric conversion film and a fixed charge film stacked on a semiconductor substrate, the photoelectric conversion film being configured to perform photoelectric conversion on incident light, the fixed charge film being configured to have a predetermined fixed charge.

2 . The solid-state image capturing element according to claim 1 , further comprising:
a charge accumulation portion configured to accumulate signal charges obtained by the photoelectric conversion performed by the photoelectric conversion film, the charge accumulation portion being formed below the photoelectric conversion film.

3 . The solid-state image capturing element according to claim 2 ,
wherein the charge accumulation portion is a semiconductor region of the semiconductor substrate.

4 . The solid-state image capturing element according to claim 1 , further comprising:
an insulation film formed on the fixed charge film.

5 . The solid-state image capturing element according to claim 4 ,
wherein a film thickness of the insulation film is a predetermined thickness of 500 nm or less.

6 . The solid-state image capturing element according to claim 1 , further comprising:
an insulation film formed between the photoelectric conversion film and the fixed charge film.

7 . The solid-state image capturing element according to claim 1 ,
wherein the fixed charge film is formed of one layer.

8 . The solid-state image capturing element according to claim 1 ,
wherein the fixed charge film is formed of two layers.

9 . The solid-state image capturing element according to claim 1 ,
wherein a film thickness of the fixed charge film is a predetermined thickness within a range of 10 nm to 100 nm.

10 . The solid-state image capturing element according to claim 1 ,
wherein a material of the fixed charge film includes at least one of hafnium, aluminum, titanium, tantalum, lanthanum, yttrium, gadolinium, and zirconium.

11 . The solid-state image capturing element according to claim 1 ,
wherein a material of the photoelectric conversion film is a compound semiconductor having a chalcopyrite structure.

12 . The solid-state image capturing element according to claim 1 ,
wherein the solid-state image capturing element is a back surface irradiation type in which the incident light is incident from a back surface side of the semiconductor substrate.

13 . The solid-state image capturing element according to claim 1 ,
wherein the pixel includes a light shielding film configured to shield the incident light, the light shielding film being formed above the fixed charge film of a pixel boundary.

14 . The solid-state image capturing element according to claim 13 ,
wherein the light shielding film includes a trench portion.

15 . The solid-state image capturing element according to claim 1 ,
wherein the pixel includes a transparent electrode formed above the fixed charge film above a charge accumulation portion of the semiconductor substrate.

16 . The solid-state image capturing element according to claim 15 ,
wherein the pixel includes a transparent electrode above the fixed charge film of a pixel boundary as well.

17 . A method of manufacturing a solid-state image capturing element, comprising:
in forming pixels of the solid-state image capturing element, forming a photoelectric conversion film configured to perform photoelectric conversion on incident light on a semiconductor substrate; and forming a fixed charge film having a predetermined fixed charge on the photoelectric conversion film.

18 . An electronic device, comprising:
a solid-state image capturing element including pixels each of which includes a photoelectric conversion film and a fixed charge film stacked on a semiconductor substrate, the photoelectric conversion film being configured to perform photoelectric conversion on incident light, the fixed charge film being configured to have a predetermined fixed charge.

Assignees

• Sony Corp

Inventors

• Oshiyama Itaru
• Takahashi Hirotsugu

Classifications

• H04N25/76

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H04N25/77 Primary

  Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components · CPC title

• H10F39/199

  Back-illuminated image sensors · CPC title

• H10F77/244

  made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers · CPC title

• H10F77/126

  comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS] · CPC title