Method of Formulating Perovskite Solar Cell Materials

Patent metadata

Field	Value
Publication number	US-2016268529-A1
Application number	US-201615068187-A
Country	US
Kind code	A1
Filing date	Mar 11, 2016
Priority date	Aug 1, 2014
Publication date	Sep 15, 2016
Grant date	—

Abstract

A method for preparing photoactive perovskite materials. The method comprises the step of preparing a lead halide precursor ink. Preparing a lead halide precursor ink comprises the steps of: introducing a lead halide into a vessel, introducing a first solvent to the vessel, and contacting the lead halide with the first solvent to dissolve the lead halide. The method further comprises depositing the lead halide precursor ink onto a substrate, drying the lead halide precursor ink to form a thin film, annealing the thin film, and rinsing the thin film with a second solvent and a salt.

First claim

1 - 30 . (canceled)

31 . A method comprising the steps of:
preparing a bismuth halide precursor ink, wherein preparing a bismuth halide precursor ink comprises the steps of:
introducing a bismuth halide into a vessel;
introducing a first solvent to the vessel; and
contacting the bismuth halide with the first solvent to dissolve the lead halide to form the lead halide precursor solution;
depositing the bismuth halide precursor ink onto a substrate; drying the bismuth halide precursor ink to form a thin film; annealing the thin film; and rinsing the thin film with a second solvent and a salt selected from the group consisting of methylammonium halide, formamidinium halide, guanidinium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide.

32 . The method of claim 31 , wherein annealing the thin film occurs for between about 5 to about 30 minutes at a temperature between about 40° C. to about 60° C.

33 . The method of claim 31 , wherein the salt is selected from the group consisting of methylammonium iodide, formamidinium iodide, guanidinium iodide, 1,2,2-triaminovinylammonium iodide, and 5-aminovaleric acid hydroiodide.

34 . The method of claim 31 , wherein the first solvent is selected from the group consisting of dry dimethylformamide, dimethylsulfoxide (DMSO), methanol, ethanol, propanol, butanol, tetrahydrofuran, formamide, pyridine, pyrrolidine, chlorobenzene, dichlorobenzene, dichloromethane, chloroform, and combinations thereof.

35 . The method of claim 31 , wherein contacting the bismuth halide with the solvent to dissolve the bismuth halide occurs between about 20° C. to about 150° C.

36 . The method of claim 31 , wherein contacting the bismuth halide with the solvent to dissolve the bismuth halide occurs at about 85° C.

37 . The method of claim 31 , wherein the bismuth halide precursor ink has a concentration of the bismuth halide between about 0.001M and about 10M.

38 . The method of claim 31 , wherein depositing the bismuth halide precursor ink onto the substrate occurs by drop casting, spin casting, slot-die printing, screen printing, or ink-jet printing.

39 . The method of claim 31 , wherein annealing the thin film occurs for up to 24 hours at a temperature between about 20° C. to about 300° C.

40 . The method of claim 31 , wherein annealing the thin film occurs for about ten minutes at a temperature of about 50° C.

41 . The method of claim 31 , wherein the second solvent selected from the group consisting of dimethylformamide, isopropanol, methanol, ethanol, butanol, chloroform, chlorobenzene, dimethylsulfoxide, water, and combinations thereof.

42 . The method of claim 31 , wherein the salt comprises formamidinium iodide.

43 . The method of claim 42 , wherein the salt is dissolved in the second solvent in a concentration of between about 0.001M and about 10M.

44 . The method of claim 31 , wherein the salt comprises methylammonium iodide.

45 . The method of claim 31 , wherein rinsing the thin film comprises at least partial submersion in the second solvent.

46 . A perovskite material prepared by a process comprising the steps of:
preparing a bismuth halide precursor ink, wherein preparing a bismuth halide precursor ink comprises the steps of:
introducing a bismuth halide into a vessel;
introducing a first solvent to the vessel; and
contacting the bismuth halide with the first solvent to dissolve the bismuth halide;
depositing the bismuth halide precursor ink onto a substrate; drying the bismuth halide precursor ink to form a thin film; annealing the thin film; and rinsing the thin film with a second solvent and a salt selected from the group consisting of methylammonium halide, formamidinium halide, guanidinium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide to form the perovskite material.

47 . The perovskite material of claim 46 , wherein annealing the thin film occurs for between about 5 to about 30 minutes at a temperature between about 40° C. to about 60° C.

48 . The perovskite material of claim 46 , wherein the salt is selected from the group consisting of methylammonium iodide, formamidinium iodide, guanidinium iodide, 1,2,2-triaminovinylammonium iodide, and 5-aminovaleric acid hydroiodide.

49 . The perovskite material of claim 46 , wherein the first solvent is selected from the group consisting of dry dimethylformamide, dimethylsulfoxide (DMSO), methanol, ethanol, propanol, butanol, tetrahydrofuran, formamide, pyridine, pyrrolidine, chlorobenzene, dichlorobenzene, dichloromethane, chloroform, and combinations thereof.

50 . The perovskite material of claim 46 , wherein contacting the bismuth halide with the solvent to dissolve the bismuth halide occurs between about 20° C. to about 150° C.

51 . The perovskite material of claim 46 , wherein contacting the bismuth halide with the solvent to dissolve the bismuth halide occurs at about 85° C.

52 . The perovskite material of claim 46 , wherein the bismuth halide precursor ink has a concentration of the bismuth halide between about 0.001M and about 10M.

53 . The perovskite material of claim 46 , wherein depositing the bismuth halide precursor ink onto the substrate occurs by drop casting, spin casting, slot-die printing, screen printing, or ink-jet printing.

54 . The perovskite material of claim 46 , wherein annealing the thin film occurs for up to 24 hours at a temperature between about 20° C. to about 300° C.

55 . The perovskite material of claim 46 , wherein annealing the thin film occurs for about ten minutes at a temperature of about 50° C.

56 . The perovskite material of claim 46 , wherein the second solvent selected from the group consisting of dimethylformamide, isopropanol, methanol, ethanol, butanol, chloroform chlorobenzene, dimethylsulfoxide, water, and combinations thereof.

57 . The perovskite material of claim 46 , wherein the salt comprises formamidinium iodide.

58 . The perovskite material of claim 57 , wherein the salt is dissolved in the second solvent in a concentration of between about 0.001M and about 10M.

59 . The perovskite material of claim 46 , wherein the salt comprises methylammonium iodide.

60 . The perovskite material of claim 46 , wherein rinsing the thin film comprises at least partial submersion in the second solvent.

Assignees

• Hunt Energy Entpr Llc

Inventors

• Irwin Michael D
• Chute Jerred A
• Dhas Vivek V

Classifications

• H01G9/2045

  comprising a semiconductor electrode comprising elements of the fourth group of the Periodic Table with or without impurities, e.g. doping materials · CPC title

• B05D1/38

  with intermediate treatment (intermediate treatment per se B05D3/00) · CPC title

• B05D3/107

  Post-treatment of applied coatings · CPC title

• Y02E10/542

  Dye sensitized solar cells · CPC title

• Y02E10/549

  Organic PV cells · CPC title