Wavelength converted light emitting device

Patent metadata

Field	Value
Publication number	US-2016268487-A1
Application number	US-201615161571-A
Country	US
Kind code	A1
Filing date	May 23, 2016
Priority date	Sep 29, 2010
Publication date	Sep 15, 2016
Grant date	—

Abstract

Embodiments of the invention include a semiconductor light emitting device capable of emitting first light having a first peak wavelength and a semiconductor wavelength converting element capable of absorbing the first light and emitting second light having a second peak wavelength. The semiconductor wavelength converting element is attached to a support and disposed in a path of light emitted by the semiconductor light emitting device. The semiconductor wavelength converting element is patterned to include at least two first regions of semiconductor wavelength converting material and at least one second region without semiconductor wavelength converting material disposed between the at least two first regions.

First claim

What is being claimed is:

1 . A structure comprising:
a semiconductor light emitting device capable of emitting first light having a first peak wavelength; and a semiconductor wavelength converting material capable of absorbing the first light and emitting second light having a second peak wavelength, wherein the semiconductor wavelength converting material comprises at least one light emitting layer disposed between first and second confining layers; wherein the semiconductor wavelength converting material is attached to a support and disposed in a path of light emitted by the semiconductor light emitting device; and the support is a ceramic phosphor capable of emitting third light having a third peak wavelength.

2 . The structure of claim 1 wherein the semiconductor wavelength converting material further comprises a plurality of light emitting layers separated by at least one barrier layer.

3 . The structure of claim 1 wherein the semiconductor wavelength converting material further comprises a double heterostructure.

4 . The structure of claim 1 wherein the second peak wavelength is red.

5 . The structure of claim 1 wherein the semiconductor wavelength converting material comprises at least one light emitting layer, wherein the at least one light emitting layer is one of a III-V semiconductor and a II-VI semiconductor.

6 . The structure of claim 1 wherein a surface of the ceramic phosphor is one of textured and roughened.

7 . The structure of claim 1 wherein the third peak wavelength is one of green and yellow.

8 . The structure of claim 1 wherein the support is one of transparent, translucent, and scattering.

9 . The structure of claim 1 wherein the support is shaped into a lens.

10 . The structure of claim 9 wherein the lens is one of a hemispherical lens and a Fresnel lens.

11 . The structure of claim 9 wherein a diameter of the lens is greater than a diagonal of the semiconductor light emitting device.

12 . The structure of claim 1 further comprising a light extraction element, wherein the semiconductor wavelength converting material is disposed between the semiconductor light emitting device and the light extraction element.

13 . The structure of claim 12 wherein the light extraction element comprises a transparent plate with a roughened or patterned surface.

14 . A structure comprising:
a semiconductor light emitting device capable of emitting first light having a first peak wavelength; and a semiconductor wavelength converting material capable of absorbing the first light and emitting second light having a second peak wavelength, wherein a surface of the semiconductor wavelength converting material is passivated; wherein the semiconductor wavelength converting material is attached to a support and disposed in a path of light emitted by the semiconductor light emitting device; and the support is a ceramic phosphor capable of emitting third light having a third peak wavelength.

15 . The structure of claim 14 wherein the surface of the semiconductor wavelength converting material is passivated by one of the group consisting of sulfur applied with a (NH 4 ) 2 S x treatment, hydrogen passivation, oxygen passivation, nitrogen passivation, and native oxide formation.

16 . The structure of claim 14 wherein a surface of the semiconductor wavelength converting material is one of textured and roughened.

17 . The structure of claim 14 wherein the second peak wavelength is red.

18 . The structure of claim 14 wherein the semiconductor wavelength converting material comprises at least one light emitting layer, wherein the at least one light emitting layer is one of a III-V semiconductor and a II-VI semiconductor.

19 . The structure of claim 14 wherein a surface of the ceramic phosphor is one of textured and roughened.

20 . The structure of claim 14 wherein the third peak wavelength is one of green and yellow.

Assignees

• Koninklijke Philips Nv

Inventors

• Camras Michael David
• Shchekin Oleg Borisovich
• Aldaz Granell Rafael Ignacio
• Grillot Patrick Nolan
• Steranka Frank Michael

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• H10H20/855

  Optical field-shaping means, e.g. lenses · CPC title

• H10H20/0361

  of wavelength conversion means · CPC title

• H10H20/8516

  having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient · CPC title

• H10H20/8513 Primary

  having two or more wavelength conversion materials · CPC title