Dual-band infrared detector and method of detecting multiple bands of infrared radiation
US-2016290865-A1 · Oct 6, 2016 · US
Infrared detection element
US2016268461A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016268461-A1 |
| Application number | US-201415033945-A |
| Country | US |
| Kind code | A1 |
| Filing date | Oct 31, 2014 |
| Priority date | Nov 5, 2013 |
| Publication date | Sep 15, 2016 |
| Grant date | — |
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Abstract
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This infrared detection element includes a buffer layer (InAsSb layer) 3, a buffer layer (InAs layer) 4, and a light absorption layer (InAsSb layer) 5. A critical film thickness he of the InAs layer satisfies a relation of hc<t with a thickness t of the InAs layer. In this case, it is possible to improve crystallinities of the buffer layer 4 of InAs and the light absorption layer 5 of InAsSb formed on the buffer layer 3.
First claim
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1 . An infrared detection element comprising: a first InAsSb layer; an InAs layer grown on the first InAsSb layer; and a second InAsSb layer grown on the InAs layer, wherein a critical film thickness hc of the InAs layer and a thickness t of the InAs layer satisfy a relation of hc<t. 2 . The infrared detection element according to claim 1 , wherein each of composition ratios X of As in the first InAsSb layer and the second InAsSb layer is not less than 0.58 and not more than 1.0. 3 . The infrared detection element according to claim 1 , wherein each of composition ratios X of As in the first InAsSb layer and the second InAsSb layer is not less than 0.7 and not more than 0.9. 4 . The infrared detection element according to claim 1 , wherein the thickness t of the InAs layer further satisfies t≦2.0 μm.
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Antimonides · CPC title
Arsenides · CPC title
consisting of three or more layers · CPC title
Antimonides · CPC title
Arsenides · CPC title
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- What does patent US2016268461A1 cover?
- This infrared detection element includes a buffer layer (InAsSb layer) 3, a buffer layer (InAs layer) 4, and a light absorption layer (InAsSb layer) 5. A critical film thickness he of the InAs layer satisfies a relation of hc<t with a thickness t of the InAs layer. In this case, it is possible to improve crystallinities of the buffer layer 4 of InAs and the light absorption layer 5 of…
- Who is the assignee on this patent?
- Hamamatsu Photonics Kk
- What technology area does this patent fall under?
- Primary CPC classification H10F77/1248. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Sep 15 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).