Semiconductor device

Patent metadata

Field	Value
Publication number	US-2016268441-A1
Application number	US-201615161329-A
Country	US
Kind code	A1
Filing date	May 23, 2016
Priority date	Dec 27, 2013
Publication date	Sep 15, 2016
Grant date	—

Abstract

To provide a semiconductor device including a transistor in which an oxide semiconductor is used and on-state current is high. In a semiconductor device including a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion, the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure in which conductive films serving as a gate electrode, a source electrode, and a drain electrode do not overlap. Furthermore, in an oxide semiconductor film, an impurity element is contained in a region which does not overlap with the gate electrode, the source electrode, and the drain electrode.

First claim

What is claimed is:

1 . A semiconductor device comprising:
a first transistor comprising:
a first gate electrode over an insulating surface;
a first insulating film over the first gate electrode;
a first oxide semiconductor film over the first insulating film;
a pair of first conductive films in contact with the first oxide semiconductor film;
a second insulating film over the first oxide semiconductor film; and
a second gate electrode over the second insulating film,
a second transistor comprising:
a second oxide semiconductor film over the first insulating film;
a pair of second conductive films in contact with the second oxide semiconductor film;
the second insulating film over the second oxide semiconductor film; and
a third gate electrode over the second insulating film,
wherein the first oxide semiconductor film comprises an impurity element in a first region that does not overlap with the second gate electrode and the pair of first conductive films, and wherein the second oxide semiconductor film comprises the impurity element in a second region that does not overlap with the third gate electrode and the pair of second conductive films.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Koezuka Junichi
• Jintyou Masami
• Shima Yukinori
• Hamochi Takashi
• Nakazawa Yasutaka

Classifications

• G02F1/133512

  Light shielding layers, e.g. black matrix (G02F1/136209 takes precedence) · CPC title

• G02F1/1368

  in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} · CPC title

• G02F1/13394

  spacers regularly patterned on the cell subtrate, e.g. walls, pillars (G02F1/133377 takes precedence) · CPC title

• G02F1/133514

  Colour filters · CPC title

• G02F1/133345

  Insulating layers (G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence) · CPC title