Semiconductor Device Having a Fin at a Side of a Semiconductor Body

Patent metadata

Field	Value
Publication number	US-2016268425-A1
Application number	US-201615163428-A
Country	US
Kind code	A1
Filing date	May 24, 2016
Priority date	Dec 3, 2012
Publication date	Sep 15, 2016
Grant date	—

Abstract

One embodiment of a semiconductor device includes a fin at a first side of a semiconductor body, a body region of a second conductivity type in at least a part of the fin, a drain extension region of a first conductivity type, a source region and a drain region of the first conductivity type, a source contact in contact with the source region, and a gate structure adjoining opposing walls of the fin. The source contact extends along a vertical direction along the source region. The source contact includes a conductive material and is disposed in a trench in the semiconductor body, adjacent to the source region. The body region and the drain extension region are arranged one after another between the source region and the drain region.

First claim

What is claimed is:

1 . A semiconductor device, comprising:
a fin at a first side of a semiconductor body; a body region of a second conductivity type in at least a part of the fin; a drain extension region of a first conductivity type; a source region and a drain region of the first conductivity type; a source contact in contact with the source region, the source contact extending along a vertical direction along the source region, the source contact comprising a conductive material and being disposed in a trench in the semiconductor body, adjacent to the source region; and a gate structure adjoining opposing walls of the fin, wherein the body region and the drain extension region are arranged one after another between the source region and the drain region.

2 . The semiconductor device of claim 1 , wherein the source contact vertically extends to a bottom side of the source region.

3 . The semiconductor device of claim 1 , further comprising a deep body region of the second conductivity type below the source region, wherein the source contact contacts the deep body region.

4 . The semiconductor device of claim 3 , wherein the deep body region is electrically connected to the body region.

5 . The semiconductor device of claim 1 , wherein the fin includes at least part of the drain extension region.

6 . The semiconductor device of claim 1 , further comprising a shallow trench isolation at a top face of the fin adjoining the drain extension region.

7 . The semiconductor device of claim 1 , wherein the gate structure adjoins a top face of the fin.

8 . The semiconductor device of claim 1 , further comprising a drain contact in contact with the drain region, the drain contact extending along a vertical direction along the drain region.

9 . An integrated circuit comprising the semiconductor device of claim 1 .

10 . A semiconductor device, comprising:
a fin at a first side of a semiconductor body; a body region of a second conductivity type in at least a part of the fin; a drain extension region of a first conductivity type; a source region and a drain region of the first conductivity type; a drain contact in contact with the drain region, the drain contact extending along a vertical direction along the drain region, the drain contact comprising a conductive material and being disposed in a trench in the semiconductor body, adjacent to the drain region; and a gate structure adjoining opposing walls of the fin, wherein the body region and the drain extension region are arranged one after another between the source region and the drain region.

11 . The semiconductor device of claim 10 , wherein the drain contact vertically extends to a bottom side of the drain region.

12 . The semiconductor device of claim 10 , further comprising a doped layer beneath the drain region, wherein the drain contact contacts the doped layer.

13 . The semiconductor device of claim 10 , wherein the fin includes at least part of the drain extension region.

14 . The semiconductor device of claim 10 , wherein the gate structure adjoins the top face of the fin.

15 . An integrated circuit comprising the semiconductor device of claim 10 .

16 . A method of manufacturing a semiconductor device, the method comprising:
forming a fin at a first side of a semiconductor body; forming a body region of a second conductivity type in at least a part of the fin; forming a drain extension region of a first conductivity type; forming a source region and a drain region of the first conductivity type; forming a source contact in contact with the source region, the source contact extending along a vertical direction along the source region, by forming a trench in the semiconductor body and filling a conductive material into the trench; and forming a gate structure adjoining opposing walls of the fin, wherein the body region and the drain extension region are arranged one after another between the source region and the drain region.

17 . The method of claim 16 , wherein forming the source region comprises diffusing dopants from a diffusion source at walls into the semiconductor body.

Assignees

• Infineon Technologies Austria Ag

Inventors

• Meiser Andreas
• Kampen Christian

Classifications

• H10P32/19

  Diffusion sources · CPC title

• H10P32/14

  within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase · CPC title

• H10D62/109

  Reduced surface field [RESURF] PN junction structures · CPC title

• H10D30/62 Primary

  Fin field-effect transistors [FinFET] · CPC title

• H10D86/215

  comprising FinFETs · CPC title