Substrate processing method and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-2016268162-A1
Application number	US-201615164625-A
Country	US
Kind code	A1
Filing date	May 25, 2016
Priority date	Dec 25, 2013
Publication date	Sep 15, 2016
Grant date	—

Abstract

An object of the present invention is to provide a method which enable a material to be fully embedded into a recess portion with a deposition film left in the recess portion. A method in one embodiment comprises: a first irradiation step of irradiating a deposition film formed on an opening portion of a recess portion in a substrate with a particle beam in a direction at a first angle with respect to a substrate in-plane direction, to remove part of the deposition film in a thickness direction; and a second irradiation step of, after the first irradiation step, irradiating the deposition film with the particle beam in a direction at a second angle which is closer to perpendicular to the substrate in-plane direction than the first angle is, to remove part of the remaining deposition film in the thickness direction.

First claim

1 . A substrate processing method of a substrate which has a recess portion on a surface and in which a deposition film is formed on an opening portion of the recess portion, the deposition film including an upper deposition film on the surface of the substrate, the upper deposition film including a protruding portion protruding from a side wall portion of the recess portion toward an inside of the recess portion on the opening portion of the recess portion, the substrate processing method comprising:
a first irradiation step of irradiating the protruding portion with a particle beam in a direction which forms a first angle with a direction perpendicular to an in-plane direction of the substrate, to remove part of the protruding portion in a thickness direction; and a second irradiation step of, after the first irradiation step, irradiating the protruding portion with the particle beam in a direction which is closer to perpendicular to the in-plane direction of the substrate than is the first angle and which forms a second angle with the direction perpendicular to the in-plane direction of the substrate, to remove part of the protruding portion that remains in the thickness direction.

2 - 3 . (canceled)

4 . The substrate processing method according to claim 1 , wherein the deposition film is formed in a bottom portion and a side wall portion of the recess portion, in addition to the opening portion.

5 . The substrate processing method according to claim 1 , wherein the first angle is more than 40° to less than 90°.

6 . The substrate processing method according to claim 5 , wherein the first angle is 60° to 80°.

7 . The substrate processing method according to claim 1 , wherein the second angle is 0° to less than 45°.

8 . The substrate processing method according to claim 7 , wherein the second angle is 0° to 20° or less.

9 . The substrate processing method according to claim 1 , wherein the deposition film contains a metal element.

10 . The substrate processing method according to claim 9 , wherein the deposition film functions as a diffusion preventing film.

11 . The substrate processing method according to claim 9 , wherein the deposition film contains at least one of Al and Ti.

12 . The substrate processing method according to claim 1 , wherein the substrate includes a member made of an insulator and the recess portion is formed in the member.

13 . The substrate processing method according to claim 1 , wherein the particle beam includes neutral particles.

14 . The substrate processing method according to claim 1 , wherein:
the particle beam is emitted continuously toward the substrate after the first irradiation step up to a start of the second irradiation step; and the substrate processing method further comprises:
a step of shielding the substrate against the particle beam after the first irradiation step, before an angle of the substrate to the particle beam is changed from the first angle; and
a step of stopping shielding the substrate against the particle beam after the angle of the substrate to the particle beam is changed from the first angle to the second angle.

15 . The substrate processing method according to claim 1 , further comprising a third irradiation step of, after the second irradiation step, irradiating the protruding portion with the particle beam in a direction which is closer to parallel to the in-plane direction of the substrate than is the second angle and which forms a third angle with the direction perpendicular to the in-plane direction of the substrate, to remove part of the protruding portion that remains in the thickness direction.

16 . A method of manufacturing a semiconductor device including a substrate which has a recess portion on a surface and in which a deposition film is formed on an opening portion of the recess portion, the deposition film including an upper deposition film on the surface of the substrate, the upper deposition film including a protruding portion protruding from a side wall portion of the recess portion toward an inside of the recess portion on the opening portion of the recess portion, the method comprising:
a first irradiation step of irradiating the protruding portion with a particle beam in a direction which forms a first angle with a direction perpendicular to an in-plane direction of the substrate, to remove part of the protruding portion in a thickness direction; and a second irradiation step of, after the first irradiation step, irradiating the protruding portion with the particle beam in a direction which is closer to perpendicular to the in-plane direction of the substrate than is the first angle and which forms a second angle with the direction perpendicular to the in-plane direction of the substrate, to remove part of the protruding portion that remains in the thickness direction.

17 . The method according to claim 16 , further comprising a step of, after the first irradiation step and the second irradiation step, forming a second deposition film covering at least part of the surface of the substrate and an inner wall surface of the recess portion.

18 . A substrate processing method of a substrate which has a recess portion on a surface and in which a deposition film is formed on an opening portion of the recess portion, the deposition film including a protruding portion protruding from a side wall portion of the recess portion toward an inside of the recess portion, the substrate processing method comprising:
a first irradiation step of irradiating the deposition film formed on the opening portion with a particle beam in a direction which forms a first angle with a direction perpendicular to an in-plane direction of the substrate, to remove part of the deposition film in a thickness direction; and a second irradiation step of, after the first irradiation step, irradiating the deposition film formed on the opening portion with the particle beam in a direction which is closer to perpendicular to the in-plane direction of the substrate than is the first angle and which forms a second angle with the direction perpendicular to the in-plane direction of the substrate, to remove part of the deposition film that remains in the thickness direction, wherein the first irradiation step reduces a thickness of the protruding portion in the direction perpendicular to the in-plane direction of the substrate, and the second irradiation step reduces a thickness of the protruding portion in a direction parallel to the substrate.

19 . A method of manufacturing a semiconductor device including a substrate which has a recess portion on a surface and in which a deposition film is formed on an opening portion of the recess portion, the deposition film including a protruding portion protruding from a side wall portion toward an inside of the recess portion, the method comprising:
a first irradiation step of irradiating the deposition film formed on the opening portion with a particle beam in a direction which forms a first angle with a direction perpendicular to an in-plane direction of the substrate, to remove part of the deposition film in a thickness direction; and a second irradiation step of, after the first irradiation step, irradiating the deposition film formed on the opening portion with the particle beam in a direction which is closer to perpendicular to the in-plane direction of the substrate than is the first angle and which forms a second angle with the direction perpendicular to the in-plane direction of the substrate, to remove part of the deposition film that remains in the thi

Assignees

• Canon Anelva Corp

Inventors

• Akasaka Hiroshi
• Ikeda Masayoshi
• Kimura Kazuhiro
• Kamiya Yasushi
• Toyosato Tomohiko

Classifications

• H10P14/44

  Physical vapour deposition [PVD] · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10W20/0523

  by irradiating with ultraviolet or particle radiation · CPC title

• H10W20/081

  by forming openings in the dielectric parts · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title