Apparatuses and methods utilizing etch stop layers

Patent metadata

Field	Value
Publication number	US-2016266493-A1
Application number	US-201615161097-A
Country	US
Kind code	A1
Filing date	May 20, 2016
Priority date	Mar 20, 2014
Publication date	Sep 15, 2016
Grant date	—

Abstract

Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.

First claim

What is claimed is:

1 . A template comprising:
a substrate; an etch stop layer overlying the substrate; and a patterned layer overlying the etch stop layer, wherein the etch stop layer is substantially resistant to etching conditions and the patterned layer is substantially labile to the etching conditions, and wherein the etch stop layer is porous and passes gas trapped between the template and a device with a resist deposited thereto when the template becomes in contact with the device.

2 . The template of claim 1 , wherein the patterned layer comprises an etchable layer.

3 . The template of claim 2 , wherein the patterned layer further comprises a mask overlying the etchable layer.

4 . The template of claim 2 , wherein the patterned layer is substantially labile to fluorine-based etching, and wherein the etching conditions are fluorine-based etching conditions.

5 . The template of claim 2 , wherein the etchable layer is selected from a group consisting of SiO 2 , glass, chromium, and quartz.

6 . The template of claim 1 , wherein the etch stop layer is selected from a group consisting of silicon, carbide-derived carbon, tunable nanoporous carbon, a covalent organic framework, and a metal nano-foam.

7 . The template of claim 1 , wherein the etch stop layer is selected from a group consisting of transparent material to radiation and a thermally conductive material to radiation.

8 . The template of claim 1 , wherein the substrate is selected from a group consisting of transparent material to radiation and thermally conductive material to radiation.

9 . A template comprising:
an etch stop layer; and a patterned layer overlying the etch stop layer, wherein the etch stop layer is substantially resistant to etching conditions and the patterned layer is substantially labile to the etching conditions, and wherein the etch stop layer is porous and passes gas trapped between the template and a device with a resist deposited thereto when the template becomes in contact with the device.

10 . The template of claim 9 , wherein the patterned layer comprises an etchable layer.

11 . The template of claim 10 , wherein the patterned layer further comprises a mask overlying the etchable layer.

12 . The template of claim 10 , wherein the patterned layer is substantially labile to fluorine-based etching, and wherein the etching conditions are fluorine-based etching conditions.

13 . The template of claim 10 , wherein the etchable layer is selected from a group consisting of SiO 2 , glass, chromium, and quartz.

14 . The template of claim 9 , wherein the etch stop layer is selected from a group consisting of silicon, carbide-derived carbon, tunable nanoporous carbon, a covalent organic framework, and a metal nano-foam.

15 . The template of claim 9 , wherein the etch stop layer is selected from a group of transparent material to radiation and thermally conductive material to radiation.

16 . A template comprising:
a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is configured to reduce a separation force between the template and a resist when the template becomes in contact with the resist by overcoming a partial vacuum created between the template and the resist; and a patterned layer overlying the etch stop layer.

17 . The template of claim 16 , wherein the patterned layer comprises an etchable layer.

18 . The template of claim 17 , wherein the patterned layer further comprises a mask overlying the etchable layer.

19 . The template of claim 17 , wherein the patterned layer is substantially labile to fluorine-based etching, and wherein the etching conditions are fluorine-based etching conditions.

20 . The template of claim 17 , wherein the etchable layer is selected from a group consisting of SiO 2 , glass, chromium, and quartz.

21 . The template of claim 16 , wherein the etch stop layer is selected from a group consisting of silicon, carbide-derived carbon, tunable nanoporous carbon, a covalent organic framework, and a metal nano-foam.

22 . The template of claim 16 , wherein the etch stop layer is selected from a group of transparent material to radiation and thermally conductive material to radiation.

23 . The template of claim 16 , wherein the substrate is selected from a group of transparent material to radiation and thermally conductive material to radiation.

Assignees

• Seagate Technology Llc

Inventors

• Feldbaum Michael R
• Wago Koichi
• Gauzner Gennady
• Lee Kim Y
• Kuo David S

Classifications

• Y10T428/24851

  Intermediate layer is discontinuous or differential · CPC title

• B29D17/00

  Producing carriers of records containing fine grooves or impressions, e.g. disc records for needle playback, cylinder records (recording sound or other information using formed grooves or the equivalent G11B); Producing record discs from master stencils · CPC title

• C23F1/00 Primary

  Etching metallic material by chemical means (manufacture of printing surfaces B41C; manufacture of printed circuits H05K) · CPC title

• G03F7/0017

  for the production of embossing, cutting or similar devices; for the production of casting means · CPC title

• G03F7/09 Primary

  characterised by structural details, e.g. supports, auxiliary layers (supports for printing plates in general B41N) · CPC title