Method of forming semiconductor devices
US-2024387980-A1 · Nov 21, 2024 · US
US2016261036A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016261036-A1 |
| Application number | US-201615046933-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 18, 2016 |
| Priority date | Mar 3, 2015 |
| Publication date | Sep 8, 2016 |
| Grant date | — |
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An antenna-integrated module includes: one or more semiconductor chips each including a silicon substrate, a metal layer stacked on a first surface of the silicon substrate, and one or more frequency converters; an insulating layer that surrounds the one or more semiconductor chips; a re-distribution layer that is stacked on a first surface of the insulating layer and on a first surface of the metal layer; one or more first antenna elements that are provided on the first surface of the metal layer with a first conductor pattern and that are connected to the one or more frequency converters; and one or more second antenna elements that are provided with a second conductor pattern on a first surface of the re-distribution layer stacked on the first surface of the insulating layer and that are connected to the one or more frequency converters.
Opening claim text (preview).
What is claimed is: 1 . An antenna-integrated module comprising: one or more semiconductor chips each having a silicon substrate, a metal layer stacked on a first surface of the silicon substrate, and one or more frequency converters; an insulating layer that surrounds the one or more semiconductor chips; a re-distribution layer that is stacked on a first surface of the insulating layer and on a first surface of the metal layer; one or more first antenna elements that are provided on the first surface of the metal layer with a first conductor pattern and that are connected to the one or more frequency converters; and one or more second antenna elements that are provided with a second conductor pattern on a first surface of the re-distribution layer stacked on the first surface of the insulating layer and that are connected to the one or more frequency converters. 2 . The antenna-integrated module according to claim 1 , wherein at least one of (i) the one or more first antenna elements and (ii) the one or more second antenna elements has a differential configuration. 3 . The antenna-integrated module according to claim 1 , wherein the insulating layer is stacked on a first surface of a conductor plate. 4 . The antenna-integrated module according to claim 1 , wherein the one or more first antenna elements and the one or more second antenna elements are configured such that the one or more first antenna elements and the one or more second antenna elements radiate toward a second surface of the re-distribution layer. 5 . The antenna-integrated module according to claim 1 , wherein the one or more semiconductor chips each have one or more phase adjusting circuits that are connected to the one or more frequency converters. 6 . The antenna-integrated module according to claim 1 , wherein the one or more semiconductor chips each have one or more amplitude adjusting circuits that are connected to the one or more frequency converters. 7 . The antenna-integrated module according to claim 1 , wherein the semiconductor chips are disposed separately from each other; and the one or more second antenna elements are disposed between the semiconductor chips. 8 . A radar device comprising: an antenna-integrated module; and a second substrate on which the antenna-integrated module is mounted, the antenna-integrated module including: one or more semiconductor chips each having a silicon substrate, a metal layer stacked on a first surface of the silicon substrate, and one or more frequency converters; an insulating layer that surrounds the one or more semiconductor chips; a re-distribution layer that is stacked on a first surface of the insulating layer and on a first surface of the metal layer; one or more first antenna elements that are provided on the first surface of the metal layer with a first conductor pattern and that are connected to the one or more frequency converters; and one or more second antenna elements that are provided with a second conductor pattern on a first surface of the re-distribution layer stacked on the first surface of the insulating layer and that are connected to the one or more frequency converters. 9 . The radar device according to claim 8 , wherein the insulating layer is stacked on a first surface of a conductor plate; and the second substrate has a third conductor pattern in a portion of the second substrate other than a portion facing the one or more first antenna elements and the one or more second antenna elements of the antenna-integrated module. 10 . The radar device according to claim 8 , wherein the second substrate has a forth conductor pattern that is located in a portion facing the first antenna element and the second antenna element of the antenna-integrated module and the second substrate has a reflection plate that is located between the antenna-integrated module and the conductor pattern in a portion facing the first antenna element and the second antenna element. 11 . The radar device according to claim 8 , wherein the second substrate has one or more phase adjusting circuits connected to the one or more frequency converters. 12 . The radar device according to claim 8 , wherein the second substrate has one or more amplitude adjusting circuits connected to the one or more frequency converters.
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
on encapsulations · CPC title
Dispositions, e.g. layouts · CPC title
for antennas · CPC title
at high-frequency [HF] or radio frequency [RF] · CPC title
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