Vapor deposition device, vapor deposition method, and method for producing organic electroluminescence display device

Patent metadata

Field	Value
Publication number	US-2016260902-A1
Application number	US-201615094902-A
Country	US
Kind code	A1
Filing date	Apr 8, 2016
Priority date	Oct 19, 2010
Publication date	Sep 8, 2016
Grant date	—

Abstract

A vapor deposition device ( 50 ) disclosed, a partition wall ( 26 ) standing between film formation regions on a film formation substrate ( 200 ), includes: a mask unit ( 80 ) including a shadow mask ( 81 ) and a vapor deposition source ( 85 ) fixed in position relative to each other; contacting means for bringing the film formation substrate ( 200 ) and the shadow mask ( 81 ) into contact with each other at the partition wall ( 26 ); and moving means for moving at least a first one of the mask unit ( 80 ) and the film formation substrate ( 200 ) relative to a second one thereof in a state in which the contact caused by the contacting means is kept.

First claim

1 .- 28 . (canceled)

29 . A method for forming, on a film formation substrate, vapor deposition films each having a predetermined pattern, the method comprising the steps of:
(I) forming a partition wall between film formation regions on the film formation substrate, the partition wall having a cross section in a reverse tapered shape and having a predetermined height; (II) providing a mask unit so that the mask unit faces the film formation substrate, the mask unit including:
(i) a vapor deposition mask that has a plurality of openings and that is smaller in area than a vapor deposition region of the film formation substrate, wherein the vapor deposition mask includes an engaging section configured to engage with the partition wall, and
(ii) a vapor deposition source that has an emission hole configured to emit a vapor deposition particle, the emission hole being provided so as to face the vapor deposition mask, the vapor deposition mask and the vapor deposition source being separated by a fixed gap, and bringing the vapor deposition mask and the film formation substrate into contact with each other at the partition wall;
(III) sequentially depositing the vapor deposition particle onto the vapor deposition region of the film formation substrate through the opening of the vapor deposition mask while causing at least one of the vapor deposition mask and the film formation substrate to move relative to each other, the engaging section having a wall surface having a depressed portion in a reverse tapered shape toward the film formation substrate, the depressed portion corresponding to the partition wall in a one-to-one correspondence, in the step (II), when the depressed portion of the vapor deposition mask is first brought into contact with the partition wall, the depressed portion of the vapor deposition mask having a larger width than a width of the partition wall or the width of the partition wall having a smaller width than the width of the depressed portion of the vapor deposition mask, so that the depressed portion of the vapor deposition mask and the partition wall are not stuck with each other, and in the step (III), at least one of the vapor deposition mask and the film formation substrate being caused to move relative to each other so that the depressed portion of the vapor deposition mask and the partition wall are stuck with each other and the engaging section engages with the partition wall along a direction of the relative movement of the film formation substrate and the mask unit, and in a state where the depressed portion of the vapor deposition mask and the partition wall are stuck with each other, while at least one of the mask unit and the film formation substrate is caused to move relative to each other, the vapor deposition particle being deposited onto the vapor deposition region of the film formation substrate.

30 . The method according to claim 29 , wherein:
the partition wall is provided in a stripe shape along the direction of the relative movement.

31 . The method according to claim 30 , wherein:
the partition wall includes a plurality of discontinuous partition walls.

32 . The method according to claim 31 , wherein:
the partition wall is provided in such a pattern that no straight line passing through a discontinuous portion of the partition wall passes over a pixel light-emitting region of the film formation substrate, the pixel light-emitting region corresponding to the respective formation regions of the vapor deposition films.

33 . A method for forming, on a film formation substrate, vapor deposition films each having a predetermined pattern, the method comprising the steps of:
(I) forming a partition wall between film formation regions on the film formation substrate, the partition wall having a cross section in a reverse tapered shape and having a predetermined height; (II) providing a mask unit so that the mask unit faces the film formation substrate, the mask unit including:
(i) a vapor deposition mask that has a plurality of openings and that is smaller in area than a vapor deposition region of the film formation substrate, wherein the vapor deposition mask includes an engaging section configured to engage with the partition wall, and
(ii) a vapor deposition source that has an emission hole configured to emit a vapor deposition particle, the emission hole being provided so as to face the vapor deposition mask, the vapor deposition mask and the vapor deposition source being separated by a fixed gap, and bringing the vapor deposition mask and the film formation substrate into contact with each other at the partition wall;
(III) sequentially depositing the vapor deposition particle onto the vapor deposition region of the film formation substrate through the opening of the vapor deposition mask while causing at least one of the vapor deposition mask and the film formation substrate to move relative to each other, the engaging section having a wall surface having a depressed portion in a reverse tapered shape toward the film formation substrate, the depressed portion corresponding to the partition wall in a one-to-one correspondence, in the step (II), when the depressed portion of the vapor deposition mask is first brought into contact with the partition wall, the depressed portion of the vapor deposition mask having a larger width than a width of the partition wall or the width of the partition wall having a smaller width than the width of the depressed portion of the vapor deposition mask, so that the depressed portion of the vapor deposition mask and the partition wall are not stuck with each other, in the step (III), at least one of the vapor deposition mask and the film formation substrate being caused to move relative to each other so that the depressed portion of the vapor deposition mask and the partition wall are stuck with each other and the engaging section engages with the partition wall along a direction of the relative movement of the film formation substrate and the mask unit, and in a state where the depressed portion of the vapor deposition mask and the partition wall are stuck with each other, while at least one of the mask unit and the film formation substrate is caused to move relative to each other, the vapor deposition particle being deposited onto the vapor deposition region of the film formation substrate, a magnet being provided on a first surface of the film formation substrate, the first surface being opposite to a second surface of the film formation substrate which second surface faces the vapor deposition mask, the magnet including a plurality of magnets provided along a first direction in which at least a first one of the mask unit and the film formation substrate moves relative to a second one thereof, the magnets each having a stripe shape extending in a second direction that is perpendicular to the first direction and that is parallel to the film formation substrate, the magnets being provided only at such a position as to correspond to the vapor deposition mask, in the step (III), the magnets being so controlled that in a case where the film formation substrate is present between the magnets and the vapor deposition mask, (i) only a line of magnets overlapping the film formation substrate generate a magnetic force and (ii) a line of magnets not overlapping the film formation substrate are stopped from generating a magnetic force.

34 . The method according to claim 33 , wherein:
the magnet has, on a surface in contact with the film formation substrate, a contact area reducing structure for reducing an area of contact with the film formation substrate.

35 . The method according to claim 29 , wherein:
an electrostatic chuck is in contact with a first surface of the film for

Assignees

• Sharp Kk

Inventors

• Sonoda Tohru
• Kawato Shinichi
• Inoue Satoshi

Classifications

• H10K59/12

  Active-matrix OLED [AMOLED] displays · CPC title

• H10K71/166

  using selective deposition, e.g. using a mask · CPC title

• C23C14/042 Primary

  using masks · CPC title

• C23C14/24

  Vacuum evaporation · CPC title

• H01L27/3244

  Electricity · mapped topic