Tire monitoring sensor, system and conrol method thereof, and vehicle having the same
US-2024416687-A1 · Dec 19, 2024 · US
Resonant type high frequency power supply device
US2016254702A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016254702-A1 |
| Application number | US-201315030949-A |
| Country | US |
| Kind code | A1 |
| Filing date | Oct 31, 2013 |
| Priority date | Oct 31, 2013 |
| Publication date | Sep 1, 2016 |
| Grant date | — |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A resonant type high frequency power supply device provided with a power semiconductor element that performs a switching operation at a high frequency exceeding 2 MHz, the resonant type high frequency power supply device including a variable inductor that makes an adjustment to the amplitude of a device output voltage.
First claim
Opening claim text (preview).
1 . A resonant type high frequency power supply device provided with a power semiconductor element that performs a switching operation at a high frequency exceeding 2 MHz, said resonant type high frequency power supply device comprising a variable inductor that makes an adjustment to an amplitude of a device output voltage. 2 . The resonant type high frequency power supply device according to claim 1 , wherein said power semiconductor element is an FET (Field Effect Transistor) other than an FET for RF (Radio Frequency). 3 . The resonant type high frequency power supply device according to claim 1 , wherein said power semiconductor element has a push-pull configuration or a single configuration. 4 . The resonant type high frequency power supply device according to claim 1 , wherein said resonant type high frequency power supply device includes a resonance circuit element that matches a resonance condition to that of a transmission antenna for power transmission according to magnetic resonance and that is comprised of a capacitor and an inductor. 5 . The resonant type high frequency power supply device according to claim 1 , wherein said resonant type high frequency power supply device includes a resonance circuit element that matches a resonance condition to that of a transmission antenna for power transmission according to electric resonance and that is comprised of a capacitor and an inductor. 6 . The resonant type high frequency power supply device according to claim 1 , wherein said resonant type high frequency power supply device includes a resonance circuit element that matches a resonance condition to that of a transmission antenna for power transmission according to electromagnetic induction and that is comprised of a capacitor and an inductor. 7 . The resonant type high frequency power supply device according to claim 4 , wherein said resonance circuit element causes the resonance condition to be variable. 8 . The resonant type high frequency power supply device according to claim 5 , wherein said resonance circuit element causes the resonance condition to be variable. 9 . The resonant type high frequency power supply device according to claim 6 , wherein said resonance circuit element causes the resonance condition to be variable. 10 . The resonant type high frequency power supply device according to claim 4 , wherein said resonant type high frequency power supply device includes a variable resonance condition circuit that causes the resonance condition of said resonance circuit element to be variable. 11 . The resonant type high frequency power supply device according to claim 5 , wherein said resonant type high frequency power supply device includes a variable resonance condition circuit that causes the resonance condition of said resonance circuit element to be variable. 12 . The resonant type high frequency power supply device according to claim 6 , wherein said resonant type high frequency power supply device includes a variable resonance condition circuit that causes the resonance condition of said resonance circuit element to be variable.
Assignees
Inventors
Classifications
- H02J50/12Primary
of the resonant type · CPC title
using microwaves or radio frequency waves · CPC title
Resonant converters (H02M7/4811 and H02M7/4826 take precedence) · CPC title
with means for adaptation of resonance frequency, e.g. by modification of capacitance or inductance of resonance circuits · CPC title
using discharge tubes with control electrode or semiconductor devices with control electrode · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US2016254702A1 cover?
- A resonant type high frequency power supply device provided with a power semiconductor element that performs a switching operation at a high frequency exceeding 2 MHz, the resonant type high frequency power supply device including a variable inductor that makes an adjustment to the amplitude of a device output voltage.
- Who is the assignee on this patent?
- Mitsubishi Electric Eng
- What technology area does this patent fall under?
- Primary CPC classification H02J50/12. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Sep 01 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).