Spectroscopy apparatus and method
US-2016041032-A1 · Feb 11, 2016 · US
US2016254647A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016254647-A1 |
| Application number | US-201514982902-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 29, 2015 |
| Priority date | Mar 7, 2014 |
| Publication date | Sep 1, 2016 |
| Grant date | — |
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A tunable laser has a first mirror, a second mirror, a gain medium, and a directional coupler. The first mirror and the second mirror form an optical resonator. The gain medium and the directional coupler are, at least partially, in an optical path of the optical resonator. The first mirror and the second mirror comprise binary super gratings. Both the first mirror and the second mirror have high reflectivity. The directional coupler provides an output coupler for the tunable laser.
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1 . (canceled) 2 . A laser comprising: an output; a first reflective element; a second reflective element; a gain medium between the first reflective element and the second reflective element; a coupler between the first reflective element and the second reflective element, the coupler comprising: a first port; a second port; and a third port; a first waveguide optically coupling the first port with the gain medium; a second waveguide optically coupling the second port with the second reflective element; and a third waveguide optically coupling the third port with the output. 3 . The laser as recited in claim 2 , wherein the first reflective element and/or the second reflective element is a tunable wavelength selective element. 4 . The laser as recited in claim 2 , wherein the first reflective element and/or the second reflective element comprises a binary super grating. 5 . The laser as recited in claim 2 , wherein the first reflective element and the second reflective element each have a reflectance value greater than 90%. 6 . The laser as recited in claim 2 , wherein: the first reflective element, the second reflective element, and the coupler comprise silicon; and the gain medium comprises a III-V compound. 7 . The laser as recited in claim 2 further comprising an optical sensor, wherein the optical sensor is optically coupled with a fourth port of the coupler. 8 . The laser as recited in claim 2 , wherein the first reflective element, the second reflective element, the gain medium, and the coupler are disposed on a substrate. 9 . The laser as recited in claim 2 , wherein the coupler has a core that has a thickness in a range from 0.5 μm and 2.5 μm. 10 . The laser as recited in claim 2 , wherein: the coupler further comprises: a substrate; a cladding layer; and a core; the cladding layer is between the substrate and the core; and the core forms the first port, the second port, and the third port. 11 . The laser as recited in claim 10 , wherein the substrate is crystalline silicon and the core is crystalline silicon. 12 . The laser as recited in claim 10 , wherein: the core comprises a shoulder and a ridge; the shoulder extends from the first port to the second port and to the third port; and the ridge extends from the first port to the second port and not to the third port. 13 . A method for using a directional coupler to output light from a lasing cavity, the method comprising: generating light with a gain medium; guiding light from the gain medium to a first reflective element; guiding light from the gain medium to a first port of a coupler; guiding light from a second port of the coupler to a second reflective element; and guiding light from a third port of the coupler to an output of a laser. 14 . The method for using a directional coupler as recited in claim 13 wherein: the coupler comprises: a substrate; a cladding layer; and a core; the cladding layer is between the substrate and the core; and the core forms the first port, the second port, and the third port. 15 . The laser as recited in claim 14 , wherein the substrate is crystalline silicon and the core is crystalline silicon. 16 . The laser as recited in claim 14 , wherein: the core comprises a shoulder and a ridge; the shoulder extends from the first port to the second port and to the third port; and the ridge extends from the first port to the second port and not to the third port. 17 . The laser as recited in claim 14 , wherein the first reflective element, the second reflective element, the coupler, and the gain medium are disposed on a substrate. 18 . The laser as recited in claim 14 , wherein the first reflective element and/or the second reflective element is a wavelength selective elements that is tunable. 19 . A directional coupler for providing output of a semiconductor laser, the directional coupler comprising: a substrate; a cladding; a core, wherein: the cladding is between the substrate and the core; and the core forms: a first port optically coupled with a gain medium; a second port optically coupled with a reflective element; and a third port optically coupled with a laser output. 20 . The directional coupler as recited in claim 19 , wherein the substrate is crystalline silicon and the core is crystalline silicon. 21 . The directional coupler as recited in claim 19 , wherein: the core comprises a shoulder and a ridge; the shoulder extends from the first port to the second port and to the third port; and the ridge extends from the first port to the second port and not to the third port.
Silicon based substrates · CPC title
Bends, branchings or intersections · CPC title
in superstructured configuration, e.g. more than one period in an alternate sequence · CPC title
controlled by temperature · CPC title
Tapered waveguides, e.g. integrated spot-size transformers (for coupling with fibres G02B6/305) · CPC title
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