Semiconductor device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-2016254277-A1
Application number	US-201615153127-A
Country	US
Kind code	A1
Filing date	May 12, 2016
Priority date	Apr 27, 2001
Publication date	Sep 1, 2016
Grant date	—

Abstract

There has been a case where peeling occurs if an internal stress of a wiring of a TFT is strong. In particular, the internal stress of a gate electrode largely influences a stress that a semiconductor film receives, and there has been a case where the internal stress becomes a cause of reduction in electric characteristics of a TFT depending on the internal stress. According to the present invention, an impurity element is introduced into a wiring, or both the introduction of an impurity element and heat treatment are performed, whereby the wiring can be controlled to have a desired internal stress. It is effective that the present invention is particularly applied to a gate electrode. Further, it is possible that the introduction of an impurity element and the heat treatment are conducted to only a desired region to conduct control to attain a desired internal stress.

First claim

1 . (canceled)

2 . A semiconductor device comprising:
a light shielding film over a substrate; a semiconductor film having a crystal structure including a channel forming region overlapping with the light shielding film; a gate electrode over the semiconductor film; a first interlayer insulating film over the gate electrode; a first conductive film electrically connected to the semiconductor film through a first contact hole in the first interlayer insulating film; a second interlayer insulating film over the first conductive film; a second conductive film having light shielding property over the second interlayer insulating film; a third interlayer insulating film over the second conductive film; and a pixel electrode electrically connected to the first conductive film through a second contact hole in the third interlayer insulating film, wherein the first contact hole does not overlap with the second contact hole.

3 . The semiconductor device according to claim 2 ,
wherein the light shielding film comprises an element included in the gate electrode.

4 . The semiconductor device according to claim 2 ,
wherein the light shielding film comprises at least one of Ta, W, Cr, and Mo.

5 . The semiconductor device according to claim 2 ,
wherein the first conductive film comprises Al and Ti.

6 . The semiconductor device according to claim 2 ,
wherein the second conductive film comprises at least one of Al, Ti, W, and Cr.

7 . The semiconductor device according to claim 2 ,
wherein the semiconductor device is a liquid crystal display device.

8 . A semiconductor device comprising:
a light shielding film over a substrate; a semiconductor film having a crystal structure including a channel forming region overlapping with the light shielding film; a gate electrode over the semiconductor film; a first interlayer insulating film over the gate electrode; a first conductive film electrically connected to the semiconductor film through a first contact hole in the first interlayer insulating film; a second interlayer insulating film over the first conductive film; a second conductive film having light shielding property arranged in mesh over the second interlayer insulating film; a third interlayer insulating film over the second conductive film; and a pixel electrode electrically connected to the first conductive film through a second contact hole in the third interlayer insulating film, wherein the first contact hole does not overlap with the second contact hole.

9 . The semiconductor device according to claim 8 ,
wherein the light shielding film comprises an element included in the gate electrode.

10 . The semiconductor device according to claim 8 ,
wherein the light shielding film comprises at least one of Ta, W, Cr, and Mo.

11 . The semiconductor device according to claim 8 ,
wherein the first conductive film comprises Al and Ti.

12 . The semiconductor device according to claim 8 ,
wherein the second conductive film comprises at least one of Al, Ti, W, and Cr.

13 . The semiconductor device according to claim 8 ,
wherein the semiconductor device is a liquid crystal display device.

Assignees

• Semiconductor Energy Lab

Inventors

• Arao Tatsuya

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D86/441 Primary

  Interconnections, e.g. scanning lines · CPC title

• H10D30/6733

  Multi-gate TFTs · CPC title

• H10D86/421

  having a particular composition, shape or crystalline structure of the active layer · CPC title