Packaging Devices and Methods of Manufacture Thereof

Patent metadata

Field	Value
Publication number	US-2016254238-A1
Application number	US-201615152376-A
Country	US
Kind code	A1
Filing date	May 11, 2016
Priority date	Jun 8, 2012
Publication date	Sep 1, 2016
Grant date	—

Abstract

Packaging devices and methods of manufacture thereof for semiconductor devices are disclosed. In some embodiments, a packaging device includes a contact pad disposed over a substrate, and a passivation layer disposed over the substrate and a first portion of the contact pad. A second portion of the contact pad is exposed. A post passivation interconnect (PPI) line is disposed over the passivation layer and is coupled to the second portion of the contact pad. A PPI pad is disposed over the passivation layer. A transition element is disposed over the passivation layer and is coupled between the PPI line and the PPI pad. The transition element includes a hollow region.

First claim

What is claimed is:

1 . A method of manufacturing a packaging device, the method comprising:
forming a contact pad over a substrate; forming a passivation layer over the substrate and the contact pad; etching an opening in the passivation layer to expose a first portion of the contact pad, wherein a second portion of the contact pad remains covered by the passivation layer; forming a polymer layer on the passivation layer, wherein the polymer layer fills a part of the opening in the passivation layer; forming a post passivation interconnect (PPI) line over the polymer layer, wherein the PPI line is coupled to the first portion of the contact pad; forming a PPI pad over the polymer layer; forming a transition element over the polymer layer, wherein the transition element is coupled between the PPI line and the PPI pad, and wherein the transition element comprises a hollow region; forming a conductive material comprising a eutectic material over the PPI pad; and re-flowing the eutectic material to form a wetting region over a portion of the transition element, wherein the wetting region is not formed on the PPI line.

2 . The method of claim 1 , wherein forming the transition element comprises positioning the hollow region of the transition element within a central region of the transition element.

3 . The method of claim 1 , wherein forming the transition element comprises forming the hollow region of the transition element having a shape selected from the group consisting essentially of a circle, an oval, a triangle, a triangle with a curved side or a curved corner, a rectangle, a rectangle with a curved side or a curved corner, a square, a square with a curved side or a curved corner, a polygon, a polygon with a curved side or a curved corner, a fragment of an annulus, and combinations thereof.

4 . The method of claim 1 , wherein the steps of forming the PPI line, forming the PPI pad, and forming the transition element are performed simultaneously.

5 . The method of claim 1 , wherein forming the transition element comprises forming the transition element having a triangular shape and forming the hollow region having a circular shape.

6 . The method of claim 1 , wherein the hollow region of the transition element has a first diameter and the PPI pad has a second diameter, and wherein the first diameter is about 1/10 to about ⅓ of the second diameter.

7 . The method of claim 1 , wherein the transition element comprises a plurality of hollow regions.

8 . A method of manufacturing a packaging device, the method comprising:
forming a contact pad over a substrate; forming a passivation layer over the substrate and the contact pad; etching an opening in the passivation layer to expose a first portion of the contact pad, wherein a second portion of the contact pad is not exposed; forming a post passivation interconnect (PPI) line over the passivation layer, the PPI line being coupled to the first portion of the contact pad; forming a PPI pad over the passivation layer; forming a transition element over the passivation layer, the transition element being coupled between the PPI line and the PPI pad; and forming an extension element over the passivation layer, the extension element comprising a ring member around the circumference of the PPI pad and radial members extending from the ring member to the PPI pad.

9 . The method of claim 8 , wherein forming the extension element further comprises forming openings in the extension element, the openings being separated by the radial members.

10 . The method of claim 9 , wherein the ring member comprises a shape of an annulus, and wherein the openings each comprise a shape of a fragment of an annulus.

11 . The method of claim 8 , further comprising forming a triangle member coupled between the PPI line and the ring member.

12 . The method of claim 11 , wherein the triangle member comprises a portion of the transition element.

13 . The method of claim 8 , wherein a thickness of the ring member is less than or equal to a width of the PPI line.

14 . A method of manufacturing a packaging device, the method comprising:
forming a contact pad over a substrate; forming a passivation layer over the substrate and the contact pad; removing a portion of the passivation layer to expose a first portion of the contact pad, leaving a second portion of the contact pad covered by the passivation layer; forming a post passivation interconnect (PPI) line over the passivation layer, the PPI line having a width of about 10 to about 100 μm; forming a PPI pad over the passivation layer; forming a transition element, the transition element having a hollow region formed therein, and the transition element being coupled between the PPI line and the PPI pad, wherein a distance between the PPI line and the PPI pad comprises about 150 μm or less; forming a conductive material over the PPI pad; and re-flowing the conductive material to form a wetting region over a portion of the transition element, wherein the wetting region is not formed on the PPI line.

15 . The method of claim 14 , wherein the transition element comprises a minimum width proximate the hollow region, wherein the minimum width is less than or equal to the width of the PPI line.

16 . The method of claim 14 , wherein the hollow region comprises a width that is about ¼ of a width of the PPI pad.

17 . The method of claim 14 , wherein the steps of forming the PPI line, forming the PPI pad, and forming the transition element are performed simultaneously.

18 . The method of claim 14 , further comprising applying a solder flux to the PPI line, the PPI pad, and the transition element before forming the conductive material over the PPI pad.

19 . The method of claim 14 , further comprising forming a molding compound over the PPI line, the PPI pad, and the transition element, wherein a top portion of the conductive material is exposed above a top surface of the molding compound.

20 . The method of claim 14 , wherein the hollow region contacts an edge of the PPI pad.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chen Hsien-Wei
• Yu Tsung-Yuan
• Tsai Hao-Yi
• Lii Mirng-Ji
• Yu Chen-Hua

Classifications

• H10W80/743

  having disposition changed during the connecting · CPC title

• H10W74/147

  the encapsulations being multilayered · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/9445

  Top-view layouts, e.g. mirror arrays · CPC title

• H10W72/9415

  relative to the surface, e.g. recessed, protruding · CPC title