Semiconductor structure, semiconductor device, and method for producing semiconductor structure
US-2015214306-A1 · Jul 30, 2015 · US
Method of manufacturing silicon carbide semiconductor substrate and method of manufacturing silicon carbide semiconductor device
US2016254149A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016254149-A1 |
| Application number | US-201615152347-A |
| Country | US |
| Kind code | A1 |
| Filing date | May 11, 2016 |
| Priority date | Feb 7, 2013 |
| Publication date | Sep 1, 2016 |
| Grant date | — |
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Abstract
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A step of preparing a silicon carbide substrate (S 11 ), a step of forming a first silicon carbide semiconductor layer on the silicon carbide substrate using a first source material gas (S 12 ), and a step of forming a second silicon carbide semiconductor layer on the first silicon carbide semiconductor layer using a second source material gas (S 13 ) are provided. In the step of forming a first silicon carbide semiconductor layer (S 12 ) and the step of forming a second silicon carbide semiconductor layer (S 13 ), ammonia gas is used as a dopant gas, and the first source material gas has a C/Si ratio of not less than 1.6 and not more than 2.2, the C/Si ratio being the number of carbon atoms to the number of silicon atoms.
First claim
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1 .- 4 . (canceled) 5 . A method of manufacturing a silicon carbide semiconductor substrate, comprising steps of: preparing a silicon carbide substrate; forming a first silicon carbide semiconductor layer on the silicon carbide substrate using a first source material gas; and forming a second silicon carbide semiconductor layer on the first silicon carbide semiconductor layer using a second source material gas, in the step of forming a first silicon carbide semiconductor layer and the step of forming a second silicon carbide semiconductor layer, ammonia gas being used as a dopant gas, the first source material gas having a C/Si ratio of not less than 1.6 and not more than 2.2, the C/Si ratio being the number of carbon atoms to the number of silicon atoms, a flow rate of the first source material gas being different from a flow rate of the second source material gas. 6 . The method of manufacturing a silicon carbide semiconductor substrate according to claim 5 , wherein an impurity concentration in the first silicon carbide semiconductor layer is higher than an impurity concentration in the second silicon carbide semiconductor layer. 7 . The method of manufacturing a silicon carbide semiconductor substrate according to claim 5 , wherein the thickness of the first silicon carbide semiconductor layer is smaller than the thickness of the second silicon carbide semiconductor layer. 8 . The method of manufacturing a silicon carbide semiconductor substrate according to claim 5 , wherein the first source material gas and the second source material gas each contain monosilane and propane. 9 . The method of manufacturing a silicon carbide semiconductor substrate according to claim 6 , wherein the impurity concentration in the second silicon carbide semiconductor layer is not less than 1×10 14 cm′ and not more than 7×10 15 cm −3 . 10 . A method of manufacturing a silicon carbide semiconductor device, comprising steps of: preparing a silicon carbide semiconductor substrate; and processing the silicon carbide semiconductor substrate, in the step of preparing a silicon carbide semiconductor substrate, the silicon carbide semiconductor substrate being manufactured with the method of manufacturing a silicon carbide semiconductor substrate according to claim 5 . 11 . A method of manufacturing a silicon carbide semiconductor device, comprising steps of: preparing a silicon carbide semiconductor substrate; and processing the silicon carbide semiconductor substrate, in the step of preparing a silicon carbide semiconductor substrate, the silicon carbide semiconductor substrate being manufactured with the method of manufacturing a silicon carbide semiconductor substrate according to claim 6 . 12 . A method of manufacturing a silicon carbide semiconductor device, comprising steps of: preparing a silicon carbide semiconductor substrate; and processing the silicon carbide semiconductor substrate, in the step of preparing a silicon carbide semiconductor substrate, the silicon carbide semiconductor substrate being manufactured with the method of manufacturing a silicon carbide semiconductor substrate according to claim 7 . 13 . A method of manufacturing a silicon carbide semiconductor device, comprising steps of: preparing a silicon carbide semiconductor substrate; and processing the silicon carbide semiconductor substrate, in the step of preparing a silicon carbide semiconductor substrate, the silicon carbide semiconductor substrate being manufactured with the method of manufacturing a silicon carbide semiconductor substrate according to claim 8 . 14 . A method of manufacturing a silicon carbide semiconductor device, comprising steps of: preparing a silicon carbide semiconductor substrate; and processing the silicon carbide semiconductor substrate, in the step of preparing a silicon carbide semiconductor substrate, the silicon carbide semiconductor substrate being manufactured with the method of manufacturing a silicon carbide semiconductor substrate according to claim 9 .
Assignees
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Classifications
N-type · CPC title
Doping during depositing · CPC title
Silicon carbide · CPC title
Silicon carbide · CPC title
using chemical vapour deposition [CVD] · CPC title
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- What does patent US2016254149A1 cover?
- A step of preparing a silicon carbide substrate (S 11 ), a step of forming a first silicon carbide semiconductor layer on the silicon carbide substrate using a first source material gas (S 12 ), and a step of forming a second silicon carbide semiconductor layer on the first silicon carbide semiconductor layer using a second source material gas (S 13 ) are provided. In the step of forming a firs…
- Who is the assignee on this patent?
- Sumitomo Electric Industries
- What technology area does this patent fall under?
- Primary CPC classification H10P14/3408. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Sep 01 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).