Film thickness sensor and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-2016252347-A1
Application number	US-201414769293-A
Country	US
Kind code	A1
Filing date	Dec 3, 2014
Priority date	Sep 18, 2014
Publication date	Sep 1, 2016
Grant date	—

Abstract

Disclosed is a film thickness sensor, Mg film or Mg/MgO film is coated on a surface of the film thickness sensor, so that Mg material is easy to attach to the film thickness sensor, and then the waste of Mg material is prevented.

First claim

1 . A film thickness sensor, wherein Mg film or Mg/MgO film is coated on a surface of the film thickness sensor.

2 . The film thickness sensor according to claim 1 , wherein a thickness of the Mg or Mg/MgO film is from 5 nm to 10 nm,

3 . The film thickness sensor according to claim 2 , wherein the thickness of the Mg or Mg/MgO film is 8 nm.

4 . The film thickness sensor according to claim 1 , wherein a thickness of MgO film in the Mg/MgO film is from 2 nm to 3 nm.

5 . The film thickness sensor according to claim 2 , wherein a thickness ratio of Mg film and MgO film in the Mg/MgO film is 1: 0.25-1.5.

6 . The film thickness sensor according to claim 5 , wherein the thickness of Mg/MgO film is 5 nm, the thickness ratio of Mg film and MgO film is 1: 0.67-1.5.

7 . The film thickness sensor according to claim 5 , wherein the thickness of Mg/MgO film is 8 nm, the thickness ratio of Mg film and MgO film is 1: 0.3-0,6.

8 . The film thickness sensor according to claim 5 , wherein the thickness of Mg/MgO film is 10 nm, the thickness ratio of Mg film and MgO film is 1: 0.25-0.45,

9 . A method for manufacturing a film thickness sensor, comprising:.
at a temperature of 600-700° C. and in an anaerobic condition of high vacuum, evaporating Mg material on the film thickness sensor to form Mg film thickness sensor; or at a temperature of 600-700° C. and in an anaerobic condition of high vacuum, evaporating Mg material on the film thickness sensor to form Mg film thickness sensor; exposing the Mg film thickness sensor to an oxygen-containing argon gas at a temperature of 30-45° C. for 60-70 seconds, oxidizing a surface of Mg film partially into MgO to form Mg/MgO film thickness sensor.

10 . The method according to claim 9 , wherein a concentration of oxygen gas in the oxygen-containing argon gas is 5-6%.

11 . The film thickness sensor according to claim 3 , wherein a thickness ratio of Mg film and MgO film in the Mg/MgO film is 1: 0.25-1.5.

12 . The film thickness sensor according to claim 4 , wherein a thickness ratio of Mg film and MgO film in the Mg/MgO film is 1: 0.25-1.5.

Assignees

• Boe Technology Group Co Ltd
• Ordos Yuansheng Optoelectronics Co Ltd

Inventors

• Xiao Ang

Classifications

• G01B21/08 Primary

  for measuring thickness · CPC title

• C23C14/54 Primary

  Controlling or regulating the coating process · CPC title

• C23C14/5853

  Oxidation · CPC title

• G01B1/00

  Measuring instruments characterised by the selection of material therefor · CPC title

• C23C14/24

  Vacuum evaporation · CPC title