Semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-2016247907-A1
Application number	US-201615048112-A
Country	US
Kind code	A1
Filing date	Feb 19, 2016
Priority date	Feb 24, 2015
Publication date	Aug 25, 2016
Grant date	—

Abstract

A semiconductor device of an embodiment includes a SiC layer having a surface, the surface inclined at an angle of 0° to 10° with respect to a {000-1} face or the surface having a normal line direction inclined at an angle of 80° to 90° with respect to a <000-1> direction, a gate electrode, a gate insulating layer provided between the surface and the gate electrode, and a region provided between the surface and the gate insulating layer, a maximum concentration of deuterium (D) in the region being 1×10 20 cm −3 or more and a maximum concentration of hydrogen (H) in the region being 1×10 19 cm −3 or less.

First claim

What is claimed is:

1 . A semiconductor device comprising:
a SiC layer having a surface, the surface inclined at an angle of 0° to 10° with respect to a {000-1} face or the surface having a normal line direction inclined at an angle of 80° to 90° with respect to a <000-1> direction; a gate electrode; a gate insulating layer provided between the surface and the gate electrode; and a region provided between the surface and the gate insulating layer, a maximum concentration of deuterium (D) in the region being 1×10 20 cm −3 or more and a maximum concentration of hydrogen (H) in the region being 1×10 19 cm −3 or less.

2 . The device according to claim 1 , wherein concentration distribution of deuterium in the region has a peak, and a full width at half maximum of the peak is 10 nm or less.

3 . The device according to claim 1 , wherein the maximum concentration of deuterium in the region is 1×10 21 cm −3 or more.

4 . The device according to claim 1 , wherein the gate insulating layer is a silicon oxide film.

5 . A method for manufacturing a semiconductor device comprising:
forming a gate insulating layer on a surface of a SiC layer, the surface inclined at an angle of 0° to 10° with respect to a {000-1} face, or, the surface having a normal line direction inclined at an angle of 80° to 90° with respect to a <000-1> direction; performing first heat treatment in an atmosphere containing deuterium after forming the gate insulating layer; and forming a gate electrode on the gate insulating layer after performing the first heat treatment.

6 . The method according to claim 5 , wherein the gate insulating layer is a silicon oxide film.

7 . The method according to claim 5 , further comprising performing second heat treatment of 800° C. or more after the first heat treatment.

8 . The method according to claim 5 , wherein the gate insulating layer is a deposition film.

9 . The method according to claim 5 , wherein the gate insulating layer is a thermal oxide film.

10 . The method according to claim 5 , wherein the first heat treatment is performed at 900° C.

11 . A method for manufacturing a semiconductor device comprising:
forming a gate insulating layer on a surface of a SiC layer, the forming the gate insulating layer including thermally-oxidizing the surface in an atmosphere containing deuterium and oxygen, the surface inclined at an angle of 0° to 10° with respect to a {000-1} face, or the surface having a normal line direction inclined at an angle of 80° to 90° with respect to a <000-1> direction; and forming a gate electrode on the gate insulating layer.

12 . The method according to claim 11 , wherein the gate insulating layer is formed by depositing an insulating film after the thermally-oxidizing the surface.

13 . The method according to claim 12 , wherein the insulating film is a silicon oxide film.

14 . The method according to claim 11 , further comprising performing a heat treatment of 800° C. or more after the forming the gate insulating layer.

15 . The method according to claim 11 , wherein the thermally-oxidizing the surface is performed at 800° C. or more.

Assignees

• Toshiba Kk

Inventors

• Ohashi Teruyuki
• Mitani Yuichiro
• Shimizu Tatsuo
• Lljima Ryosuke

Classifications

• H10P95/94

  Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma · CPC title

• H10D64/01366

  the semiconductor being silicon carbide · CPC title

• H10D12/032

  of vertical IGBTs · CPC title

• H10D30/0297

  using recessing of the gate electrodes, e.g. to form trench gate electrodes · CPC title

• H10D30/0291

  of vertical DMOS [VDMOS] FETs · CPC title