Semiconductor device

Patent metadata

Field	Value
Publication number	US-2016247808-A1
Application number	US-201315027846-A
Country	US
Kind code	A1
Filing date	Nov 5, 2013
Priority date	Nov 5, 2013
Publication date	Aug 25, 2016
Grant date	—

Abstract

Provided is a technology for further reducing a loss in a semiconductor device including a semiconductor substrate in which an IGBT region and a diode region are provided. This semiconductor device includes a semiconductor substrate in which at least one IGBT region and at least one diode region are provided. The IGBT region and the diode region are adjacent to each other in a predetermined direction in a plan view of the semiconductor substrate. In the plan view of the semiconductor substrate, a first boundary plane where the collector region and the cathode region are adjacent is shifted from a second boundary plane where the IGBT region and the diode region are adjacent on the front surface side of the semiconductor substrate either in a direction from the cathode region toward the collector region or in a direction from the collector region toward the cathode region.

First claim

1 . A semiconductor device comprising a semiconductor substrate in which at least one IGBT region and at least one diode region are provided, wherein
the IGBT region comprises: a first conductivity type emitter region disposed in an area exposed on a front surface of the semiconductor substrate; a second conductivity type base region surrounding the emitter region and in contact with the emitter region; a first conductivity type first drift region disposed on a back surface side of the semiconductor substrate with respect to the base region, and being separated from the emitter region by the base region; a gate electrode disposed in a trench penetrating the base region to extend to the first drift region, and facing a part of the base region which separates the emitter region from the first drift region; an insulating body disposed between the gate electrode and an inner wall of the trench; and a second conductivity type collector region disposed in an area exposed on a back surface of the semiconductor substrate, the diode region comprises: a second conductivity type anode region disposed in an area exposed on the front surface of the semiconductor substrate; a first conductivity type second drift region disposed on the back surface side of the semiconductor substrate with respect to the anode region; and a first conductivity type cathode region disposed in an area exposed on the back surface of the semiconductor substrate; the IGBT region and the diode region are adjacent to each other in a plan view of the semiconductor substrate, in the plan view of the semiconductor substrate, a first boundary plane where the collector region and the cathode region are adjacent is shifted from a second boundary plane where the IGBT region and the diode region are adjacent on the front surface side of the semiconductor substrate either in a direction from the cathode region toward the collector region or in a direction from the collector region toward the cathode region.

2 . The semiconductor device according to claim 1 , wherein
in the plan view of the semiconductor substrate, when an area of the IGBT region is larger than an area of the diode region, the first boundary plane is shifted from the second boundary plane in a direction from the cathode region toward the collector region, and in the plan view of the semiconductor substrate, when the area of the diode region is larger than the area of the IGBT region, the first boundary plane is shifted from the second boundary plane in a direction from the collector region toward the cathode region.

3 . The semiconductor device according to claim 2 , wherein
in the plan view of the semiconductor substrate, the IGBT region and the diode region have rectangular shapes, the IGBT region and the diode region are adjacent to each other in a predetermined direction, the first boundary plane and the second boundary plane extend in a direction perpendicular to the predetermined direction, when a width of the IGBT region in the predetermined direction is wider than a width of the diode region in the predetermined direction, the first boundary plane is shifted from the second boundary plane in the direction from the cathode region toward the collector region by a first, predetermined width, and when the width of the diode region in the predetermined direction is wider than the width of the IGBT region in the predetermined direction, the first boundary plane is shifted from the second boundary plane in the direction from the collector region toward the cathode region by a second predetermined width.

4 . The semiconductor device according to claim 2 , wherein
in the plan view of the semiconductor substrate, the IGBT region and the diode region have rectangular shapes, the IGBT region and the diode region are adjacent to each other in a predetermined direction, the first boundary plane and the second boundary plane extend in a direction perpendicular to the predetermined direction, and when a width of the ICBT region in the predetermined direction is equal to a width of the diode region in the predetermined direction, the first boundary plane is shifted from the second boundary plane in the direction from the collector region toward the cathode region by a third predetermined width.

5 . The semiconductor device according to claim 2 or 3 , wherein
the IGBT region and the diode region are adjacent to each other in a predetermined direction,
when a ratio of a width of the IGBT region to a width of the diode region in the predetermined direction is 3 to 1, the first boundary plane is shifted from the second boundary plane in the direction from the cathode region toward the collector region by a length of 3 to 30% of the width of the diode region.

Assignees

• Horiuchi Yuki
• Kameyama Satoru
• Toyota Motor Co Ltd

Inventors

• Horiuchi Yuki
• Kameyama Satoru

Classifications

• H10W72/926

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• H10D64/117 Primary

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