Wafer support device

Patent metadata

Field	Value
Publication number	US-2016247709-A1
Application number	US-201615145382-A
Country	US
Kind code	A1
Filing date	May 3, 2016
Priority date	Aug 23, 2012
Publication date	Aug 25, 2016
Grant date	—

Abstract

A wafer support device is provided. The wafer support device includes a plurality of support portions; and a bottom area located among the support portions, wherein the bottom area has a protective layer formed thereon. A method for processing a working surface of a wafer support device is also provided.

First claim

What is claimed is:

1 . A wafer support device, comprising:
a plurality of support portions; and a bottom area located among the support portions, wherein the bottom area has a protective layer formed thereon, wherein each of the plurality of support portions is arranged at equal intervals with respect to adjacent support portions, and wherein the plurality of support portions are arranged in parallel lines such that the plurality of support portions in adjacent lines are offset from each other.

2 . The wafer support device as claimed in claim 1 , wherein:
the wafer support device is an electrostatic chuck.

3 . The wafer support device as claimed in claim 1 , wherein:
the wafer support device has a working surface and a wafer-contacting surface; each of the support portions has a top surface and a lateral surface; the lateral surface of each support portion is provided with the protective layer; the bottom area has a bottom surface; the working surface includes the top surface and the lateral surface of each support portion and the bottom surface of the bottom area; and the wafer-contacting surface includes the top surface of each support portion.

4 . The wafer support device as claimed in claim 1 , wherein the protective layer comprises a protective material.

5 . The wafer support device as claimed in claim 4 , wherein the protective material comprises an anticorrosive and insulating material.

6 . The wafer support device as claimed in claim 5 , wherein the anticorrosive and insulating material comprises one selected from the group consisting of Y 2 O 3 , Al 2 O 3 , silicon, SiO 2 , and a Teflon.

7 . A wafer processing apparatus, comprising:
the wafer support device of claim 1 , the wafer support device having a working surface, and a wafer-contacting surface for supporting thereon a wafer; a spray device configured to spray a protective material onto the working surface to form a protective layer, wherein the protective layer includes a specific portion covering the wafer-contacting surface; and a grind device configured to grind the specific portion after the spray device sprays the protective material onto the working surface.

8 . The wafer processing apparatus as claimed in claim 7 , wherein:
each of the support portions has a top surface and a lateral surface; the bottom area has a bottom surface; the working surface includes the top surface and the lateral surface of each support portion and the bottom surface of the bottom area; and the wafer-contacting surface includes the top surface of each support portion.

9 . The wafer processing apparatus as claimed in claim 7 , wherein:
the wafer support device is an electrostatic chuck.

10 . The wafer processing apparatus as claimed in claim 7 , wherein the protective material comprises an anticorrosive and insulating material selected from the group consisting of Y 2 O 3 , Al 2 O 3 , silicon, SiO 2 , and a Teflon.

11 . A wafer support device, comprising:
a plurality of support portions; and a bottom area located among the support portions, wherein the bottom area has a protective layer formed thereon, wherein each of the plurality of support portions is arranged at equal intervals with respect to adjacent support portions, and wherein each of the plurality of support portion is surrounded by six adjacent support portions.

12 . The wafer support device as claimed in claim 11 , wherein:
the wafer support device is an electrostatic chuck.

13 . The wafer support device as claimed in claim 11 , wherein:
the wafer support device has a working surface and a wafer-contacting surface; each of the support portions has a top surface and a lateral surface; the lateral surface of each support portion is provided with the protective layer; the bottom area has a bottom surface; the working surface includes the top surface and the lateral surface of each support portion and the bottom surface of the bottom area; and the wafer-contacting surface includes the top surface of each support portion.

14 . The wafer support device as claimed in claim 11 , wherein the protective layer comprises a protective material.

15 . The wafer support device as claimed in claim 14 , wherein the protective material comprises an anticorrosive and insulating material.

16 . The wafer support device as claimed in claim 14 , wherein the anticorrosive and insulating material comprises one selected from the group consisting of Y 2 O 3 , Al 2 O 3 , silicon, SiO 2 , and a Teflon.

17 . A wafer processing apparatus, comprising:
the wafer support device of claim 11 , the wafer support device having a working surface, and a wafer-contacting surface for supporting thereon a wafer; a spray device configured to spray a protective material onto the working surface to form a protective layer, wherein the protective layer includes a specific portion covering the wafer-contacting surface; and a grind device configured to grind the specific portion after the spray device sprays the protective material onto the working surface.

18 . The wafer processing apparatus as claimed in claim 17 , wherein:
each of the support portions has a top surface and a lateral surface; the bottom area has a bottom surface; the working surface includes the top surface and the lateral surface of each support portion and the bottom surface of the bottom area; and the wafer-contacting surface includes the top surface of each support portion.

19 . The wafer processing apparatus as claimed in claim 17 , wherein:
the wafer support device is an electrostatic chuck.

20 . The wafer processing apparatus as claimed in claim 17 , wherein the protective material comprises an anticorrosive and insulating material selected from the group consisting of Y 2 O 3 , Al 2 O 3 , silicon, SiO 2 , and a Teflon.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Cheng Tien-Chih
• Zhang Ying
• Suen Shu-Huei
• Kao Chen-Chiao

Classifications

• H10P72/7616

  characterised by a coating, a hardness or a material · CPC title

• H10P72/722

  Details of electrostatic chucks · CPC title

• H10P72/7614 Primary

  characterised by a plurality of individual support members, e.g. support posts or protrusions · CPC title

• B05B13/02

  Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work (B05B13/06 takes precedence) · CPC title

• B24B7/228

  for grinding thin, brittle parts, e.g. semiconductors, wafers (grinding edges of thin, brittle parts B24B9/065) · CPC title